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Microchip Technology MS1N8175US/TR
- Part No.:
- MS1N8175US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8175US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,358
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Product details
Overview
MS1N8175US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 95.0 V minimum breakdown voltage (V(BR)), 82.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the MS1N8175US/TR datasheet, MS1N8175US/TR pinout, MS1N8175US/TR application, or MS1N8175US/TR equivalent, key selection criteria include its Category 1 metallurgical bond reliability, RoHS-compliant MELF "A" package, low-leakage standby current (0.5 µA max at VWM), and IEC61000-4-2/4-4/4-5 compliance for secondary lightning and surge immunity in mission-critical systems.
Technical Context
This TVS integrates a series-opposed rectifier diode to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices - making it suitable for >1 GHz RF paths and high-baud-rate serial links where parasitic loading degrades signal integrity. Its hard-glass hermetic seal and tungsten slug construction ensure stable performance across -55°C to +175°C junction temperature range.
The device operates as a unidirectional clamping element with 137.0 V maximum clamping voltage (VC) at 300 A peak impulse current (IPP), delivering predictable overvoltage protection without forward conduction during normal operation. Its αV(BR) temperature coefficient of 0.106 %/°C ensures minimal V(BR) drift under thermal stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR) min | 95.0 V - Ensures reliable triggering above system operating voltage while avoiding false clamping during transients. |
| VWM | 82.0 V - Maximum continuous reverse bias voltage before leakage exceeds 0.5 µA; defines safe operating margin for 72 V nominal bus protection. |
| VC @ IPP=300 A | 137.0 V - Clamping voltage limits downstream IC stress to <137 V during 10/1000 µs surges, enabling robust interface protection. |
| CT | 4 pF - Ultra-low capacitance preserves signal rise time and impedance matching in RF and high-speed digital traces. |
| PPP | 150 W - Sustains standardized 10/1000 µs surge energy without degradation, meeting MIL-STD-1275 and DO-160 Section 22 requirements. |
| TJ range | -55°C to +175°C - Supports operation in extended-temperature environments including engine control units and satellite payloads. |
| RθJA | 150 °C/W - Thermal resistance enables 1.0 W steady-state dissipation on standard PCB layouts without forced cooling. |
Pinout & Package
MS1N8175US/TR uses the axial-leaded "A" MELF surface-mount package (0.060–0.085 inch body diameter, 0.106–0.175 inch body length), with cathode band marking and tin-plated copper leads. Hermetic glass construction eliminates voids and supports Category 1 metallurgical bonding for radiation-hardened applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for transient energy absorption | Connected to protected line; conducts only during reverse overvoltage events when cathode is biased positive relative to anode. |
| Cathode | Clamping reference terminal | Connected to ground or common return; establishes VWM and VC thresholds; marked by visible band on glass body. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination, ensuring >20-year field reliability in humid or vacuum environments. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/507 requirements for space-grade interconnect integrity under thermal cycling and vibration. |
| Series-opposed rectifier integration | Enables 4 pF capacitance without external components - critical for preserving 5G NR and PCIe Gen5 signal fidelity. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±15 kV contact / ±20 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-ground lightning surges per Level 3. |
| RoHS-compliant e3 marking | Lead-free matte tin plating meets EU Directive 2011/65/EU and J-STD-020 reflow profile compatibility. |
Applications
| RF Transceiver Front-End Protection | Avionics Data Bus Interface |
|---|---|
|
Use Scenario: Protecting L-band (1–2 GHz) antenna feedlines and mixer inputs from ESD and induced transients in airborne radar systems. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at SMA connector entry point to shunt surges before reaching GaAs MMIC amplifiers. Use Value: 4 pF capacitance prevents VSWR degradation and insertion loss increase, maintaining >20 dB return loss up to 2.5 GHz. |
Use Scenario: Safeguarding ARINC 429 receive inputs against load dump and lightning-induced surges in flight control computers. IC Role / Device Role / Timing Role: Standoff voltage (82.0 V) aligns with 70 V aircraft bus transients; clamps within 137 V to protect CMOS receiver inputs. Use Value: -55°C to +175°C operation supports full DO-160G Section 22 environmental compliance without derating. |
| High-Speed Serial Link ESD Guard | Satellite Power Management Interface |
|
Use Scenario: Shielding USB 3.2 Gen 2 (10 Gbps) differential pairs from human-body-model ESD events on docking stations. IC Role / Device Role / Timing Role: Low-capacitance TVS placed adjacent to connector pins to minimize stub length and preserve 90 Ω differential impedance. Use Value: 0.5 µA max ID at 82 V ensures no DC loading on 3.3 V logic rails; 137 V VC avoids latch-up in USB PHY controllers. |
Use Scenario: Protecting telemetry command lines between solar array regulators and onboard computers in geostationary satellites. IC Role / Device Role / Timing Role: Radiation-hardened TVS with Category 1 bond used in redundant command paths where single-event burnout must be prevented. Use Value: Inherent radiation tolerance per MicroNote 050 eliminates need for shielding mass; hermetic seal prevents outgassing in vacuum. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ85A | Higher 100 pF capacitance; 85 V VWM; 125 W PPP; DO-214AA package; no Category 1 bond. | Acceptable for industrial CAN bus or RS-485 where bandwidth <100 MHz; unsuitable for RF or space-grade use. | Select SMBJ85A only when cost sensitivity outweighs RF performance and radiation hardness requirements. |
| 1.5KE85CA | Bidirectional; 85 V VWM; 150 W PPP; axial leaded DO-201 package; 100 pF CT; no hermetic seal. | Used in AC mains input stages or telecom power supplies; lacks low-C design for high-speed data lines. | Choose 1.5KE85CA for general-purpose bidirectional surge suppression where capacitance and reliability are secondary. |
Compared with SMBJ85A and 1.5KE85CA, MS1N8175US/TR uniquely combines 4 pF capacitance, hermetic Category 1 construction, and 82 V VWM - making it irreplaceable for RF front-end and aerospace signal-line protection where signal integrity and long-term reliability are non-negotiable.
Availability
MS1N8175US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, avionics data bus interfaces, high-speed serial link ESD guard, satellite power management interfaces, and other applications requiring stable component supply with guaranteed long-term availability.
Supply support for MS1N8175US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The MS1N8175US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient protection in high-frequency, high-reliability systems where failure is not an option.
FAQ
What is the maximum clamping voltage of MS1N8175US/TR at its rated peak impulse current?
The MS1N8175US/TR has a maximum clamping voltage (VC) of 137.0 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25°C ambient and ensures downstream circuitry remains below destructive voltage thresholds during standardized surge events. The MS1N8175US/TR maintains this clamping performance across its full operating temperature range due to its stable thermal design and low αV(BR).
Is MS1N8175US/TR suitable for bidirectional transient protection?
No, MS1N8175US/TR is a unidirectional TVS diode optimized for reverse-biased clamping only. For bidirectional protection, two MS1N8175US/TR devices must be connected in anti-parallel configuration - which doubles the effective capacitance to 8 pF. This arrangement is documented in Microsemi's Figure 5 and retains the device's low-leakage and high-reliability attributes while extending coverage to both polarities.
Does MS1N8175US/TR meet space-level reliability standards?
Yes, MS1N8175US/TR incorporates Category 1 internal metallurgical bonds and voidless hermetic glass packaging, satisfying MIL-PRF-19500/507 requirements for space-grade discrete semiconductors. Its inherent radiation hardness is validated per Microsemi MicroNote 050, and it supports full DO-160G Section 22 testing - confirming suitability for satellite telemetry, command, and payload interface applications.
What is the thermal resistance and steady-state power rating of MS1N8175US/TR?
The MS1N8175US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W and a steady-state average power rating (PM(AV)) of 1.0 W at TA = 25°C. This allows continuous dissipation of up to 1 W on standard FR-4 PCBs with adequate copper pour, provided junction temperature remains below +175°C. Derating is required above 25°C ambient per the curve in Figure 3 of the datasheet.
How does the 4 pF capacitance of MS1N8175US/TR compare to standard TVS diodes?
The 4 pF capacitance of MS1N8175US/TR is the lowest among all 150 W-rated TVS diodes, achieved via an integrated series-opposed rectifier structure. Standard TVS devices like SMBJ85A or P6KE85A typically exhibit 100–200 pF, which severely attenuates signals above 100 MHz. At 4 pF, MS1N8175US/TR introduces negligible loading on RF traces and high-speed serial lanes - preserving signal integrity in 5G, radar, and USB 3.x designs.
MS1N8175US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 82V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 1.09A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8175US/TR FAQ
1.How can I place an order for MS1N8175US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8175US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8175US/TR reliable?
The price and inventory of MS1N8175US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8175US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8175US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8175US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8175US/TR?
MS1N8175US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8175US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8175US/TR?
For technical support, including MS1N8175US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8175US/TR requirements.
6.How does Aetrix verify that MS1N8175US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8175US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8175US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8175US/TR?
All MS1N8175US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8175US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8175US/TR part is unused and in its original packaging.
Return procedure for MS1N8175US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8175US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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