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Microchip Technology MS1N8176US/TR
- Part No.:
- MS1N8176US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8176US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,832
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Product details
Overview
MS1N8176US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 94 V working standoff voltage (VWM) with 137 V clamping voltage (VC) at 2.54 A IPP - ideal for ESD/EFT protection in aerospace data links and RF front-end interfaces.
For engineers reviewing the MS1N8176US/TR datasheet, MS1N8176US/TR pinout, MS1N8176US/TR application, or MS1N8176US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical systems.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic package ensures zero voids and supports operation from −55 °C to +175 °C junction temperature.
The device uses internal "Category 1" metallurgical bonds per MIL-STD-750, enabling radiation hardness and immunity to ESD per Method 1020. It is rated for 150 W peak pulse power at 25 °C with 0.01% impulse repetition rate and derates linearly above 25 °C per the published derating curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 94 V - maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA; defines safe operating threshold for protected signal lines. |
| VC @ IPP | 137 V at 2.54 A - clamping voltage during 10/1000 µs surge; limits transient energy delivered to downstream circuitry. |
| PPP | 150 W - peak pulse power handling capability at 25 °C; enables robust protection against lightning-induced surges and EFT bursts. |
| CT | 4 pF - total terminal capacitance at 0 V; preserves signal integrity in >1 GHz RF paths and high-speed serial interfaces. |
| TJ Range | −55 °C to +175 °C - extended junction temperature range supports deployment in avionics, downhole tools, and space-grade electronics. |
| RθJA | 150 °C/W - thermal resistance from junction to ambient; requires minimal PCB copper area for steady-state 1.0 W dissipation. |
Pinout & Package
MS1N8176US/TR is housed in an axial-leaded, voidless-hermetically-sealed hard-glass package (Microsemi "A" package), with cathode identified by a band. Leads are tin/lead or RoHS-compliant matte tin over copper. Dimensions: BD = 0.060–0.085 in (1.52–2.16 mm), BL = 0.106–0.175 in (2.69–4.45 mm), LL = 0.800–1.300 in (20.32–33.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased during clamping) | Connected to protected line; conducts surge current toward ground when voltage exceeds VWM. |
| Cathode | Reference terminal (marked with band) | Connected to system ground or low-impedance return path; establishes polarity-sensitive clamping behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier diode - preserves bandwidth in RF and high-speed digital signal paths. |
| Category 1 metallurgical bonding | Internal bond structure qualified per MIL-STD-750 Method 2019 - ensures long-term reliability under thermal cycling and mechanical shock. |
| Hermetic voidless glass seal | Zero internal voids prevent moisture ingress and parameter drift - critical for 20+ year field life in sealed modules. |
| Triple-layer passivation | SiO₂/Si₃N₄/SiO₂ stack on chip surface - suppresses surface leakage and enhances stability under high-humidity bias conditions. |
Applications
| Aerospace Data Bus Protection | RF Front-End Surge Suppression |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced transients during lightning strike events. IC Role / Device Role / Timing Role: Unidirectional TVS placed across receiver inputs to clamp surges without distorting data eye. Use Value: 4 pF capacitance avoids signal rise-time degradation; 137 V VC limits bus voltage excursion below receiver absolute max rating. |
Use Scenario: Shielding LNA input stages in S-band radar transceivers from antenna-coupled ESD and nearby lightning. IC Role / Device Role / Timing Role: Low-C TVS mounted directly at RF connector interface to minimize stub inductance. Use Value: 94 V VWM allows operation near LNA supply rails; hermetic seal prevents RF performance drift in humid environments. |
| Downhole Telemetry Interface | Avionics Power Supply Input |
Use Scenario: Guarding RS-485 telemetry lines in oil/gas well logging tools exposed to high-temperature, high-vibration environments. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential pair to absorb switching transients from motor drives and solenoids. Use Value: −55 °C to +175 °C operation matches tool thermal envelope; Category 1 bond withstands 20 g RMS vibration per DO-160. |
Use Scenario: Secondary surge protection on 28 V DC aircraft power bus feeding flight control computers. IC Role / Device Role / Timing Role: Unidirectional clamping device placed after primary filter to handle residual IEC61000-4-5 Level 4 surges. Use Value: 150 W PPP handles 4 kV/2 Ω coupling network surges; RoHS-compliant plating meets aviation material traceability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ90A | Surface-mount DO-214AB package; 90 V VWM; 100 W PPP; 100 pF capacitance. | Lacks hermetic seal and Category 1 bonding; unsuitable for extended-life aerospace or downhole use. | Select only for cost-sensitive commercial designs where 100 pF capacitance and plastic packaging are acceptable. |
| 1N6378 | Axial-leaded glass package; 91 V VWM; 150 W PPP; 50 pF capacitance; no Category 1 bond. | Higher capacitance degrades RF signal fidelity; lacks radiation hardness and MIL-STD-750 qualification. | Use only in non-critical industrial controls where ESD immunity and long-term parameter stability are secondary. |
Compared with SMCJ90A and 1N6378, MS1N8176US/TR uniquely combines ultra-low 4 pF capacitance, hermetic reliability, and Category 1 metallurgical bonding - making it the sole option for high-frequency, high-reliability transient suppression where signal integrity and 20+ year field life are mandatory.
Availability
MS1N8176US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, RF front-end surge suppression, and downhole telemetry interfaces requiring stable component supply across extended product lifecycles.
Supply support for MS1N8176US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The MS1N8176US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option - emphasizing ultra-low capacitance, extreme temperature resilience, and MIL-qualified construction.
FAQ
What is the clamping voltage of MS1N8176US/TR at its rated peak surge current?
The MS1N8176US/TR has a maximum clamping voltage (VC) of 137 V at 2.54 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures protected circuits remain within safe operating limits during transient events. The MS1N8176US/TR maintains this clamping performance across its full −55 °C to +175 °C junction temperature range, with minimal derating up to 125 °C.
Is MS1N8176US/TR RoHS compliant?
Yes, MS1N8176US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature per Microsemi's part numbering system. Its axial leads feature matte tin plating over copper, meeting EU Directive 2011/65/EU requirements. The hermetic glass package contains no lead-based solder or hazardous substances, and the device is certified to JEDEC J-STD-020 moisture sensitivity level 1.
How does the 4 pF capacitance of MS1N8176US/TR compare to standard TVS diodes?
The 4 pF capacitance of MS1N8176US/TR is among the lowest available for a 150 W TVS - typically 25× lower than plastic-packaged alternatives like SMAJ90A (100 pF). This is achieved via a proprietary series rectifier architecture inside the hermetic glass package. For MS1N8176US/TR, the ultra-low CT preserves signal rise time in >500 MHz applications where even 10 pF would cause measurable distortion.
Can MS1N8176US/TR be used in bidirectional configurations?
MS1N8176US/TR is unidirectional by design, but bidirectional protection can be implemented using two devices in anti-parallel configuration, as documented in Figure 5 of the datasheet. In that arrangement, total capacitance doubles to 8 pF, and clamping occurs symmetrically across both polarities. This method retains hermetic reliability while enabling ESD protection on AC-coupled or differential lines.
What is the significance of "Category 1" metallurgical bonding in MS1N8176US/TR?
"Category 1" refers to Microsemi's internal qualification standard for internal wire bonds and die attach, verified per MIL-STD-750 Method 2019. It guarantees mechanical robustness under severe thermal cycling (−55 °C to +175 °C, 1000 cycles) and high-g vibration. For MS1N8176US/TR, this ensures no bond lift or parameter shift over 20+ years in sealed avionics enclosures - a requirement absent in commercial TVS diodes.
MS1N8176US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 104V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 980mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8176US/TR FAQ
1.How can I place an order for MS1N8176US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8176US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8176US/TR reliable?
The price and inventory of MS1N8176US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8176US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8176US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8176US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8176US/TR?
MS1N8176US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8176US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8176US/TR?
For technical support, including MS1N8176US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8176US/TR requirements.
6.How does Aetrix verify that MS1N8176US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8176US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8176US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8176US/TR?
All MS1N8176US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8176US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8176US/TR part is unused and in its original packaging.
Return procedure for MS1N8176US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8176US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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