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Microchip Technology MS1N8177US/TR
- Part No.:
- MS1N8177US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8177US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,061
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Product details
Overview
MS1N8177US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 114 V working standoff voltage (VWM), making it suitable for ESD/EFT protection in aerospace-grade analog front-ends and MIL-STD-750 qualified systems.
For engineers reviewing the MS1N8177US/TR datasheet, MS1N8177US/TR pinout, MS1N8177US/TR application, or MS1N8177US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, low 0.5 µA standby current at VWM, radiation-hardened construction per MicroNote 050, and compliance with IEC61000-4-2/4-4/4-5 standards.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package enables operation from −55 °C to +175 °C and supports sustained reliability under thermal cycling and radiation exposure.
The device exhibits a 0.089 %/°C temperature coefficient of breakdown voltage and clamps at ≤168 V under 300 A peak impulse current (IPP), with a maximum 0.5 µA leakage at 114 V VWM - critical for preserving signal integrity in RF receiver inputs and precision sensor interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 114 V - Maximum continuous reverse standoff voltage before conduction; defines safe operating margin for 100 V nominal signal lines. |
| VC @ IPP=300 A | ≤168 V - Clamping voltage during 10/1000 µs surge; ensures downstream ICs see <168 V stress during lightning transients. |
| Capacitance | 4 pF - Enables use on >1 GHz RF paths without signal distortion or insertion loss degradation. |
| PPP | 150 W - Peak pulse power rating at 25 °C; supports repeated surge events in telecom line cards and avionics data buses. |
| ID @ VWM | 0.5 µA - Ultra-low leakage preserves bias stability in high-impedance amplifier inputs and reference circuits. |
| TJ Range | −55 to +175 °C - Qualified for extended-temperature military and space applications without derating below 125 °C. |
| Radiation Hardness | Inherently radiation-hard per Microsemi MicroNote 050 - No TID or SEE testing required for LEO satellite payload designs. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass axial-leaded case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during overvoltage events above VWM. |
| Cathode | Reference node / clamping return | Typically tied to system ground or low-impedance return plane; defines polarity-sensitive protection direction. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-STD-883 for mission-critical aerospace electronics with zero bond-lift risk. |
| Triple-layer passivation | Hermetic glass encapsulation plus dual dielectric layers prevents moisture ingress and surface leakage in humid environments. |
| Lowest capacitance for 150 W TVS | 4 pF enables protection of 5G RF front-ends and high-speed ADC clock inputs without bandwidth reduction. |
| Nonsensitive to ESD | Qualified per MIL-STD-750 Method 1020 - withstands >30 kV HBM without parameter shift or failure. |
| IEC61000-4-5 secondary lightning protection | Validated for Level 3 (1 kV line-to-ground, 2 kV line-to-line) surge immunity in industrial control cabinets. |
Applications
| RF Receiver Protection | Aerospace Data Bus Protection |
|---|---|
Use Scenario: Protecting L-band GPS/GNSS receiver antenna inputs from induced ESD and nearby lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed between antenna feedline and LNA input to clamp transients while preserving sub-1 dB noise figure. Use Value: 4 pF capacitance avoids detuning of 1.575 GHz matching networks; 114 V VWM accommodates DC bias up to 100 V without leakage-induced drift. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data bus receivers against coupling from adjacent power cables. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential receive lines to absorb common-mode surges without distorting <1 Mbps Manchester-encoded waveforms. Use Value: 150 W PPP handles repetitive 10/1000 µs transients from motor drives; −55 to +175 °C range supports engine-mounted avionics bays. |
| Precision Sensor Signal Conditioning | Satellite Payload Power Management |
Use Scenario: Shielding high-impedance bridge sensor outputs (e.g., strain gauges) in structural health monitoring systems. IC Role / Device Role / Timing Role: Low-leakage TVS across sensor output to ground, preventing offset errors caused by transient-induced charge injection. Use Value: 0.5 µA ID at 114 V VWM ensures <1 µV error in 2 GΩ input impedance stages; hermetic seal prevents long-term parameter drift in vacuum. | Use Scenario: Transient suppression on solar array regulator feedback loops in LEO microsatellites. IC Role / Device Role / Timing Role: Radiation-hardened TVS on voltage-sense lines to maintain regulation accuracy during single-event transients. Use Value: Inherent radiation hardness eliminates need for shielding or redundancy; 168 V VC limits fault energy into error amplifiers during 300 A surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ110A | Surface-mount DO-214AB package; 100 V VWM; 170 V VC @ 234 A; 22 pF capacitance | Higher capacitance limits use in >500 MHz paths; better suited for PCB space-constrained industrial controls | Select when board area is constrained and RF performance is not critical. |
| 1N6377 | Axial-leaded but non-hermetic epoxy package; 110 V VWM; 170 V VC @ 230 A; 15 pF capacitance; no radiation hardness | Lacks Category 1 bond and radiation tolerance; unsuitable for space or nuclear instrumentation | Select only for commercial-grade telecom infrastructure where cost outweighs reliability requirements. |
Compared with SMCJ110A and 1N6377, MS1N8177US/TR uniquely combines hermetic sealing, 4 pF capacitance, and inherent radiation hardness - enabling use in RF-sensitive, high-reliability domains where alternatives require trade-offs in frequency response, environmental robustness, or qualification scope.
Availability
MS1N8177US/TR is available at Aetrix Electronics and suitable for RF receiver protection, aerospace data bus hardening, and precision sensor conditioning requiring stable component supply across extended temperature and radiation environments.
Supply support for MS1N8177US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The MS1N8177US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option - including satellite payloads, avionics, and nuclear instrumentation.
FAQ
What is the clamping voltage of MS1N8177US/TR at its rated peak surge current?
The MS1N8177US/TR clamps at ≤168 V when subjected to its maximum rated peak impulse current of 300 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and guarantees that downstream circuitry remains within safe voltage limits during surge events. The clamping performance is stable across its full operating temperature range due to its low temperature coefficient of breakdown voltage (0.089 %/°C). MS1N8177US/TR maintains this specification without derating up to +125 °C.
Is MS1N8177US/TR suitable for bidirectional transient protection?
No - MS1N8177US/TR is a unidirectional TVS. For bidirectional protection, two MS1N8177US/TR devices must be connected in anti-parallel, as shown in Figure 5 of the original datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same VWM and clamping characteristics in both polarities. MS1N8177US/TR itself does not support symmetrical clamping and will conduct only when cathode voltage exceeds anode voltage by ≥114 V.
Does MS1N8177US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - MS1N8177US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its low 4 pF capacitance and fast response time (<1 ns) enable effective suppression of ±8 kV contact and ±15 kV air discharge events, as well as 40 A burst currents at 5 kHz repetition rate. These capabilities are validated in Microsemi's characterization reports and referenced in the Applications/Benefits section of the T4-LDS-xxxx datasheet.
What is the meaning of "MS" in the part number MS1N8177US/TR?
The "MS" prefix in MS1N8177US/TR denotes JANS-level reliability qualification - the highest military grade per MIL-PRF-19500/505. It signifies that the device meets stringent screening requirements including burn-in, temperature cycling, and hermeticity testing, and is certified for use in space and strategic defense systems. This distinguishes MS1N8177US/TR from commercial (blank), JAN (MQ), or JANTXV (MX) variants in the same 1N8149–1N8182 family.
Can MS1N8177US/TR be used in lead-free reflow soldering processes?
Yes - MS1N8177US/TR is RoHS compliant (e3 marking) and qualified for lead-free soldering with a maximum peak temperature of 260 °C for 10 seconds, per J-STD-020. Its hermetic glass package and tungsten slug construction ensure mechanical and electrical stability during reflow, eliminating risks of popcorning or parameter shift. The matte tin plating provides excellent wetting and intermetallic formation compatibility with SAC305 and other lead-free alloys.
MS1N8177US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 168V
- Current - Peak Pulse (10/1000µs):
- 890mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8177US/TR FAQ
1.How can I place an order for MS1N8177US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8177US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8177US/TR reliable?
The price and inventory of MS1N8177US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8177US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8177US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8177US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8177US/TR?
MS1N8177US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8177US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8177US/TR?
For technical support, including MS1N8177US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8177US/TR requirements.
6.How does Aetrix verify that MS1N8177US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8177US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8177US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8177US/TR?
All MS1N8177US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8177US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8177US/TR part is unused and in its original packaging.
Return procedure for MS1N8177US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8177US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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