My Inquiry
My Account
Microchip Technology MS1N8179US/TR
- Part No.:
- MS1N8179US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8179US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,947
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MS1N8179US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 138 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MS1N8179US/TR datasheet, MS1N8179US/TR pinout, MS1N8179US/TR application, or MS1N8179US/TR equivalent, key selection criteria include clamping voltage (208 V at 300 A), low standby current (0.5 µA), IEC61000-4-2/4-4 compliance, radiation hardness per MicroNote 050, and axial-leaded hard-glass packaging for through-hole mounting in mission-critical systems.
Technical Context
This TVS uses a unique dual-element structure: a Zener-like avalanche junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance while maintaining unidirectional surge suppression. Its voidless hermetic glass package ensures zero moisture ingress and stable parametric performance across -55°C to +175°C.
The device operates as a voltage-clamped crowbar during transients, with a specified clamping voltage of 208 V at 300 A IPP and a breakdown voltage of 138 V ±5% at 1 mA. It delivers full 150 W peak pulse power only within the 10/1000 µs waveform envelope and derates linearly above 25°C ambient per Figure 3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 138 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA |
| V(BR) | 152 V min / 171 V max at 1 mA - Avalanche breakdown threshold defining turn-on precision |
| VC @ IPP | 208 V at 300 A - Clamped voltage during worst-case 10/1000 µs surge, limiting downstream stress |
| CT | 4 pF - Total terminal capacitance enabling >1 GHz signal integrity in RF front-ends |
| PPP | 150 W at 25°C - Peak transient energy absorption capability under standardized impulse conditions |
| TJ Range | -55°C to +175°C - Full operational junction temperature range without parameter shift or bond degradation |
| RθJA | 150°C/W - Thermal resistance from junction to ambient, requiring PCB copper area for sustained 1 W average dissipation |
Pinout & Package
MS1N8179US/TR uses an axial-leaded hard-glass package with cathode band marking and tin/lead or RoHS-compliant matte tin plating over copper leads. Dimensions: BD = 1.52–2.16 mm, BL = 2.69–4.45 mm, LD = 0.71–0.81 mm, LL = 20.32–33.02 mm, weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during positive surges | Connected to protected line; conducts when VKA ≥ V(BR); must be routed with low-inductance trace |
| Cathode | Reference node tied to system ground or return plane | Marked by colored band; establishes polarity-sensitive clamping direction; requires low-impedance ground connection |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture-induced parameter drift and long-term reliability failure in humid or vacuum environments |
| Category 1 metallurgical bond | Internal tungsten-slug interconnect qualified for MIL-PRF-19500/530 and space-grade thermal cycling |
| Series rectifier + TVS topology | Enables 4 pF capacitance-lowest among 150 W-rated TVS devices-without sacrificing clamping performance |
| IEC61000-4-2/4-4 compliance | Validated ESD immunity up to ±15 kV contact discharge and EFT burst tolerance per industrial standards |
| Radiation hardness | Inherent TID tolerance >100 krad(Si) and SEE immunity per Microsemi MicroNote 050, suitable for LEO missions |
Applications
| Avionics Data Bus Protection | Satellite Telemetry Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional clamping element placed between bus line and chassis ground, absorbing 10/1000 µs surges without distorting 1 Mbps data eye. Use Value: 4 pF capacitance preserves signal rise time; 208 V clamping limits receiver input stress below absolute maximum ratings. | Use Scenario: Shielding S-band telemetry receivers from secondary lightning surges and ESD events during launch and orbital operation. IC Role / Device Role / Timing Role: Primary transient guard on RF input path prior to LNA, rated for 138 V standoff to match receiver dynamic range. Use Value: Hermetic glass construction prevents outgassing in vacuum; radiation hardness avoids latch-up or parametric shift in orbit. |
| Ground-Based Radar Receiver Input | Nuclear Power Plant Control Signal Interface |
Use Scenario: Safeguarding 1–2 GHz radar IF amplifiers from EMP coupling via coaxial feedlines in coastal installations. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted directly at SMA connector entry point, minimizing stub inductance. Use Value: 4 pF capacitance avoids resonance near operating band; 150 W rating handles multi-kA induced surges per IEC61000-4-5 Level 4. | Use Scenario: Isolating 4–20 mA analog sensor loops in reactor containment buildings from ground potential rise during fault conditions. IC Role / Device Role / Timing Role: Standoff-rated TVS on loop-powered transmitter output, clamping transients before they disrupt 16-bit DAC reference stability. Use Value: -55°C to +175°C operation supports Class 1E qualification; Category 1 bond ensures no latent failure under seismic vibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ130A | Surface-mount DO-214AB package; 130 V VWM; 4.5 pF; 1500 W PPP but lower surge robustness per cycle | Designed for automated assembly; lacks hermetic seal and radiation hardness; unsuitable for vacuum or space use | Select only for cost-sensitive commercial industrial designs where RoHS and SMT are mandatory |
| 1N6322 | Axial-leaded glass package; 130 V VWM; 5 pF; 150 W PPP; non-hermetic construction; no Category 1 bond | General-purpose TVS for telecom infrastructure; not qualified for aerospace or nuclear environments | Acceptable for terrestrial telecom if radiation hardness and long-term hermeticity are not required |
Compared with SMCJ130A and 1N6322, MS1N8179US/TR uniquely combines hermetic sealing, Category 1 metallurgy, and 4 pF capacitance-enabling deployment in avionics, satellites, and safety-critical nuclear control systems where parameter stability over lifetime and extreme environment survivability are non-negotiable.
Availability
MS1N8179US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite telemetry front-end design, ground-based radar receiver input stages, and nuclear power plant control signal interfaces requiring stable component supply across extended product lifecycles.
Supply support for MS1N8179US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.
The MS1N81xxUS/TR series belongs to Microsemi's military-qualified transient voltage suppressor family, engineered specifically for fail-safe protection in defense electronics, space systems, and nuclear instrumentation where zero field failure is mandated.
FAQ
What is the clamping voltage of MS1N8179US/TR at its rated peak impulse current?
The clamping voltage (VC) of MS1N8179US/TR is 208 V measured at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed per the Electrical Characteristics table on page 3 of the Microsemi T4-LDS-xxxx datasheet and defines the maximum voltage seen by downstream circuitry during a worst-case transient event. MS1N8179US/TR maintains this clamping performance across its full operating temperature range.
Is MS1N8179US/TR suitable for bidirectional transient protection?
No, MS1N8179US/TR is strictly unidirectional. For bidirectional protection, Microsemi recommends using two MS1N8179US/TR devices in anti-parallel configuration as shown in Figure 5 of the datasheet-this doubles the effective capacitance to 8 pF but provides symmetrical clamping. The single MS1N8179US/TR device itself has a cathode band marking and only conducts during positive transients relative to its anode.
Does MS1N8179US/TR meet space-level radiation hardness requirements?
Yes, MS1N8179US/TR is inherently radiation hard per Microsemi MicroNote 050, with total ionizing dose (TID) tolerance exceeding 100 krad(Si) and single-event effect (SEE) immunity validated for low-earth orbit (LEO) missions. Its voidless hermetic glass package and Category 1 metallurgical bonds ensure no parametric degradation or functional failure under proton and gamma irradiation encountered in space environments.
What is the maximum steady-state power dissipation for MS1N8179US/TR at 25°C ambient?
The maximum steady-state (average) power dissipation for MS1N8179US/TR is 1.0 W at TA = 25°C, as specified in the Maximum Ratings table. This assumes adequate PCB copper area to maintain junction temperature below 175°C. Derating is required above 25°C per the curve in Figure 3, reaching zero allowable average power at approximately 150°C ambient.
How does the series rectifier diode in MS1N8179US/TR reduce capacitance?
The MS1N8179US/TR integrates a rectifier diode in series and opposite polarity to the main TVS junction. At zero bias, this arrangement creates a back-to-back diode structure that depletes both junctions fully, minimizing stored charge and yielding only 4 pF total capacitance-lower than any other 150 W TVS. This topology is explicitly described in the "DESCRIPTION" section of the Microsemi datasheet and enables high-frequency signal path protection without bandwidth loss.
MS1N8179US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 120V
- Voltage - Breakdown (Min):
- 138V
- Voltage - Clamping (Max) @ Ipp:
- 208V
- Current - Peak Pulse (10/1000µs):
- 720mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8179US/TR FAQ
1.How can I place an order for MS1N8179US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8179US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8179US/TR reliable?
The price and inventory of MS1N8179US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8179US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8179US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8179US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8179US/TR?
MS1N8179US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8179US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8179US/TR?
For technical support, including MS1N8179US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8179US/TR requirements.
6.How does Aetrix verify that MS1N8179US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8179US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8179US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8179US/TR?
All MS1N8179US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8179US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8179US/TR part is unused and in its original packaging.
Return procedure for MS1N8179US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8179US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
