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Microchip Technology MS1N8180US/TR
- Part No.:
- MS1N8180US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8180US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,293
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Product details
Overview
MS1N8180US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 150 W peak pulse power at 10/1000 µs, and 130 V working standoff voltage (VWM), designed for ESD/EFT protection in high-frequency telecom and aerospace signal lines.
For engineers reviewing the MS1N8180US/TR datasheet, MS1N8180US/TR pinout, MS1N8180US/TR application, or MS1N8180US/TR equivalent, key selection criteria include low-capacitance clamping performance, Category 1 metallurgical bond reliability, hermetic glass package robustness, and IEC61000-4-2/4-4 compliance for mission-critical interfaces.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction incorporates internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and thermal stability up to +175 °C junction temperature.
The device operates with 130 V working standoff voltage (VWM), clamps at ≤208 V under 300 A peak impulse current (IPP), and delivers 150 W peak pulse power per IEC 61000-4-5 waveform. It exhibits 0.098 %/°C breakdown voltage temperature coefficient and <0.5 µA standby leakage at rated VWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 130 V - Maximum continuous reverse voltage before clamping onset; defines safe operating margin for 120 V nominal signal lines. |
| VC @ IPP=300 A | 208 V - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to sub-210 V level. |
| CT | 4 pF - Total capacitance at 0 V; enables >1 GHz signal integrity in RF front-ends and high-speed data links. |
| PPP | 150 W - Peak pulse power rating; supports lightning-level transients per IEC61000-4-5 Level 3 (1 kV/2 kV). |
| TJ Range | –55 to +175 °C - Extended junction temperature range; validated for aerospace and downhole industrial environments. |
| αV(BR) | 0.098 %/°C - Breakdown voltage temperature coefficient; ensures stable clamping threshold across wide thermal excursions. |
| ID @ VWM | 0.5 µA - Standby leakage current; minimizes quiescent power loss in battery-backed or low-power sensor nodes. |
Pinout & Package
MS1N8180US/TR is housed in an axial-leaded "A" package (hermetically sealed voidless hard glass with tungsten slugs), with cathode band marking polarity. Leads are RoHS-compliant matte tin-plated copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during overvoltage | Connected to protected line; conducts surge current to ground when V > VWM. |
| Cathode | Reference terminal / clamping reference node | Connected to system ground; establishes clamping voltage relative to this node. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk; extends MTBF in humid or vacuum environments. |
| Category 1 metallurgical bond | Validated for MIL-PRF-19500 Class H/J and space-grade applications; ensures bond integrity under thermal cycling and vibration. |
| Low 4 pF capacitance | Preserves signal rise time and impedance matching in >500 Mbps serial links without adding RC delay. |
| IEC61000-4-2/4-4 compliance | Withstands ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT bursts without degradation. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per MicroNote 050; suitable for LEO satellite payload interfaces. |
Applications
| Telecom Line Interface Protection | Aerospace Avionics Data Bus |
|---|---|
Use Scenario: Protecting RS-485/RS-422 differential pairs in outdoor base station backhaul equipment exposed to induced lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp on each line, referenced to chassis ground, absorbing common-mode transients before receiver input. Use Value: 4 pF capacitance prevents signal distortion at 10 Mbps; 208 V clamping protects 3.3 V or 5 V transceivers from damage. | Use Scenario: Safeguarding ARINC 429 receive inputs in flight control computers subjected to ESD and power bus transients. IC Role / Device Role / Timing Role: Point-of-entry protection on discrete signal lines, leveraging hermetic seal and Category 1 bond for DO-160 Section 22 compliance. Use Value: –55 to +175 °C operation supports extended temperature qualification; 150 W PPP handles aircraft power fault energy. |
| Medical Imaging Signal Chain | Industrial Ethernet PHY Interface |
Use Scenario: Shielding analog video and timing signals in MRI gradient coil control modules from switching noise and ESD events. IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at connector entry, minimizing stub length to preserve signal fidelity. Use Value: Sub-1 µA leakage avoids DC offset errors in precision analog paths; hermetic seal prevents outgassing in vacuum chambers. | Use Scenario: Protecting 100BASE-TX transformer center taps and PHY pins in factory automation gateways installed near motor drives. IC Role / Device Role / Timing Role: Unidirectional clamping on MDI lines, coordinated with common-mode chokes to meet EN 61000-4-5 Level 4. Use Value: 130 V VWM matches 100BASE-TX common-mode voltage range; 300 A IPP withstands repetitive 2 kV surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ130A | Surface-mount SMC package; 6.5 pF capacitance; 130 V VWM; 1500 W PPP but higher clamping voltage (219 V). | Higher capacitance limits use in >500 MHz systems; SMT footprint requires PCB redesign vs. axial leads. | Choose for high-volume automated assembly where board space is constrained and lower-frequency interfaces dominate. |
| 1N6322 | Axial-leaded, same 130 V VWM, but 10 pF capacitance and 100 W PPP; non-hermetic epoxy package; no Category 1 bond. | Lacks radiation hardness and long-term hermetic reliability; unsuitable for aerospace or high-humidity deployments. | Choose only for cost-sensitive commercial applications where 4 pF and MIL-grade bonding are not required. |
Compared with SMCJ130A and 1N6322, MS1N8180US/TR uniquely combines axial-leaded mounting, 4 pF capacitance, hermetic sealing, and Category 1 metallurgical bonding-making it the only option qualified for high-reliability, high-frequency, and radiation-exposed signal protection.
Availability
MS1N8180US/TR is available at Aetrix Electronics and suitable for telecom infrastructure, aerospace avionics, and medical imaging systems requiring stable component supply with guaranteed long-term availability and traceable sourcing.
Supply support for MS1N8180US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and hermetically sealed components.
The MS1N8180US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for ESD/EFT protection in high-frequency, high-reliability signal paths where failure is not an option.
FAQ
What is the clamping voltage of MS1N8180US/TR at its rated peak impulse current?
The MS1N8180US/TR has a maximum clamping voltage (VC) of 208 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during surge events. The MS1N8180US/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient of 0.098 %/°C.
Is MS1N8180US/TR RoHS compliant?
Yes, MS1N8180US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature. Its axial leads feature matte tin plating over copper, meeting EU Directive 2011/65/EU requirements. The hermetic glass package contains no lead-based solder or hazardous substances, and Microsemi certifies full compliance with exemption 7a (lead in high-melting-temperature type solders).
How does the 4 pF capacitance of MS1N8180US/TR impact high-speed signal integrity?
The 4 pF total capacitance of MS1N8180US/TR minimizes loading on high-speed signal lines, preserving rise times and impedance matching in applications such as 100BASE-TX Ethernet, ARINC 429, and RS-422. At 100 MHz, its capacitive reactance exceeds 400 Ω, ensuring negligible signal attenuation. This enables placement directly at connectors without equalization or compensation circuits, unlike higher-capacitance alternatives like the 1N6322 (10 pF).
What is the significance of "Category 1 metallurgical bond" in MS1N8180US/TR?
The Category 1 metallurgical bond in MS1N8180US/TR refers to a validated, diffusion-bonded interface between semiconductor die and internal tungsten slug, certified per MIL-PRF-19500. It ensures mechanical and electrical integrity under extreme thermal cycling (–55 to +175 °C), shock, and vibration-critical for aerospace, downhole, and military platforms. This bond eliminates wirebond fatigue and interfacial delamination risks present in standard epoxy-packaged TVS devices.
Can MS1N8180US/TR be used for bidirectional transient protection?
No, MS1N8180US/TR is strictly unidirectional. For bidirectional protection, two MS1N8180US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains low-clamp performance. Using a single MS1N8180US/TR in reverse bias will not provide symmetrical clamping and may fail catastrophically under positive transients.
MS1N8180US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 130V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 225V
- Current - Peak Pulse (10/1000µs):
- 670mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8180US/TR FAQ
1.How can I place an order for MS1N8180US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8180US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8180US/TR reliable?
The price and inventory of MS1N8180US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8180US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8180US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8180US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8180US/TR?
MS1N8180US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8180US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8180US/TR?
For technical support, including MS1N8180US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8180US/TR requirements.
6.How does Aetrix verify that MS1N8180US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8180US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8180US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8180US/TR?
All MS1N8180US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8180US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8180US/TR part is unused and in its original packaging.
Return procedure for MS1N8180US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8180US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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