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Microchip Technology MS1N8182US/TR
- Part No.:
- MS1N8182US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8182US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,524
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Product details
Overview
MS1N8182US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency transient protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 150 V working standoff voltage (VWM), making it suitable for ESD/EFT protection in aerospace-grade signal lines.
For engineers reviewing the MS1N8182US/TR datasheet, MS1N8182US/TR pinout, MS1N8182US/TR application, or MS1N8182US/TR equivalent, this device offers verified low-capacitance clamping performance, Category 1 metallurgical bonding, and RoHS-compliant axial-leaded packaging for through-hole mounting in mission-critical analog interfaces.
Technical Context
The MS1N8182US/TR integrates a unique rectifier diode in series and opposite polarity to the TVS junction, enabling ultra-low 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
It achieves 150 W peak pulse power at 10/1000 µs with a clamping voltage of 261 V at 1.95 A IPP, and exhibits <0.108 %/°C breakdown voltage temperature coefficient. The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 150 V - Maximum continuous reverse standoff voltage before clamping begins; sets operating margin for protected line. |
| VC @ IPP | 261 V @ 1.95 A - Clamping voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream circuitry. |
| CT | 4 pF - Total small-signal capacitance; enables use in >1 GHz RF/analog paths without signal integrity degradation. |
| PPP | 150 W - Peak pulse power rating at 25 °C; determines survivability against standardized lightning/surge transients. |
| TJ Range | –55 to +175 °C - Full military-grade junction temperature range; supports deployment in avionics and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; informs PCB copper area and heatsinking requirements for sustained surge duty. |
| IIB @ VWIB | 1 µA @ 150 V - Inverse blocking leakage current; ensures minimal DC loading on high-impedance sensor or reference nodes. |
Pinout & Package
MS1N8182US/TR uses an axial-leaded, voidless hermetically sealed hard-glass package with tungsten slugs and cathode band polarity marking. Leads are tin/lead or RoHS-compliant matte tin over copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts surge energy to ground when clamping threshold exceeded. |
| Cathode | Reference terminal / clamping voltage reference | Connected to system ground; establishes clamping voltage relative to ground plane for unidirectional protection. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-STD-750 Method 2024 for high-reliability applications including spaceflight and nuclear instrumentation. |
| Triple-layer passivation | Hermetic glass encapsulation with three dielectric layers prevents moisture ingress and surface leakage under high humidity or condensation. |
| Lowest capacitance for 150 W TVS | 4 pF enables protection of high-speed data lines (e.g., RS-485, CAN FD, LVDS) without bandwidth limiting or signal reflection. |
| Nonsensitive to ESD | Qualified per MIL-STD-750 Method 1020 - withstands handling without pre-failure, eliminating need for ESD-safe assembly protocols. |
| Inherent radiation hardness | Performance stable under total ionizing dose (TID) exposure as documented in Microsemi MicroNote 050; no derating required in radiation environments. |
Applications
| Avionics Data Bus Protection | Satellite Telemetry Interface |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients on long harness runs. IC Role / Device Role / Timing Role: Unidirectional TVS placed across receiver inputs to clamp surges while preserving signal fidelity up to 1 MHz. Use Value: 4 pF capacitance avoids skew or attenuation of Manchester-encoded telemetry signals; 150 V VWM matches bus common-mode range. | Use Scenario: Shielding S-band telemetry downlink receivers from ESD events during ground handling and launch vibration. IC Role / Device Role / Timing Role: Standoff-clamping TVS on RF front-end bias lines to prevent gate oxide damage in LNA transistors. Use Value: 175 °C max junction temperature allows operation near warm RF power amplifiers; hermetic seal prevents outgassing in vacuum. |
| Downhole Oilfield Sensor Interface | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Safeguarding 4–20 mA current-loop sensors in high-temperature wellhead control modules exposed to switching transients. IC Role / Device Role / Timing Role: Series-connected TVS on loop supply line to absorb 150 W surges without disrupting 24 VDC bias. Use Value: 150 °C operational limit matches downhole thermal profiles; axial leads enable direct solder-mount into ruggedized enclosures. | Use Scenario: Protecting gamma spectrometer preamplifier inputs from electrostatic discharge during maintenance in containment zones. IC Role / Device Role / Timing Role: Low-leakage (1 µA) TVS on high-impedance detector node to avoid baseline drift or noise injection. Use Value: <0.1 µA standby current preserves femtoamp-level signal integrity; Category 1 bond ensures zero latent failure in safety-critical systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ150A | Surface-mount DO-214AB package; 6.5 pF capacitance; 1500 W peak power but higher clamping voltage (243 V). | Designed for automated SMT assembly; less suitable for high-frequency analog due to higher capacitance and parasitic inductance. | Select when board space is constrained and surge energy exceeds 150 W; verify layout-induced impedance does not degrade clamping response. |
| 1N6372 | Axial-leaded, 150 W, 150 V VWM, but 12 pF capacitance and non-hermetic epoxy package; no Category 1 qualification. | Commercial-grade replacement only; unsuitable for radiation-hardened or vacuum environments. | Acceptable for industrial control panels where reliability and frequency response are secondary to cost and availability. |
Compared with SMCJ150A and 1N6372, the MS1N8182US/TR uniquely combines hermetic sealing, 4 pF capacitance, and Category 1 bonding-enabling use in RF-sensitive, high-reliability, and radiation-exposed systems where alternatives compromise on at least one critical parameter.
Availability
MS1N8182US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite telemetry interface, and downhole oilfield sensor interface requiring stable component supply across extended product lifecycles.
Supply support for MS1N8182US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The MS1N8182US/TR belongs to Microsemi's legacy 1N81xx TVS family, engineered specifically for mission-critical transient suppression where hermeticity, low capacitance, and radiation tolerance are mandatory-not optional.
FAQ
What is the maximum clamping voltage of the MS1N8182US/TR under a 10/1000 µs surge?
The MS1N8182US/TR has a maximum clamping voltage (VC) of 261 V when subjected to its rated peak impulse current (IPP) of 1.95 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The MS1N8182US/TR maintains this clamping performance across its full operating temperature range, with derating applied per the manufacturer's thermal curve.
Is the MS1N8182US/TR RoHS compliant?
Yes, the MS1N8182US/TR is RoHS compliant, indicated by the "e3" suffix in its full part nomenclature. Its axial leads feature matte tin plating over copper, satisfying lead-free soldering requirements. The device meets Directive 2011/65/EU Annex II substance restrictions and is suitable for environmentally regulated aerospace and medical applications where compliance documentation is required for MS1N8182US/TR procurement.
Does the MS1N8182US/TR support bidirectional transient protection?
No, the MS1N8182US/TR is strictly unidirectional. Bidirectional protection requires two MS1N8182US/TR devices mounted in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same VWM and clamping characteristics in both polarities. For true single-device bidirectional operation, a different part number must be selected.
What is the significance of "Category 1 metallurgical bond" for the MS1N8182US/TR?
The Category 1 metallurgical bond in the MS1N8182US/TR refers to an internal interconnect structure qualified per MIL-STD-750 Method 2024 for zero-defect reliability in life-critical systems. It ensures mechanical and electrical stability under thermal cycling, shock, and vibration-making MS1N8182US/TR appropriate for flight hardware, nuclear instrumentation, and deep-well electronics where field failure is unacceptable.
Can the MS1N8182US/TR be used in high-frequency RF signal paths?
Yes, the MS1N8182US/TR is explicitly optimized for high-frequency applications due to its 4 pF total capacitance-the lowest available for any 150 W TVS. This enables use in RF front-ends, high-speed data links (e.g., CAN FD, LVDS), and microwave sensor interfaces without introducing measurable insertion loss or phase distortion below 2 GHz. Its hermetic glass package further eliminates dielectric absorption effects that plague epoxy-packaged alternatives.
MS1N8182US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 170V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 294V
- Current - Peak Pulse (10/1000µs):
- 510mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8182US/TR FAQ
1.How can I place an order for MS1N8182US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8182US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8182US/TR reliable?
The price and inventory of MS1N8182US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8182US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8182US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8182US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8182US/TR?
MS1N8182US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8182US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8182US/TR?
For technical support, including MS1N8182US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8182US/TR requirements.
6.How does Aetrix verify that MS1N8182US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8182US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8182US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8182US/TR?
All MS1N8182US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8182US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8182US/TR part is unused and in its original packaging.
Return procedure for MS1N8182US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8182US/TR Tags
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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