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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Microchip Technology MS8150-P2613

Name: MS8150-P2613
Brand: Microchip Technology
SKU: MS8150-P2613
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MS8150-P2613

Manufacturer:: Microchip Technology

Category:: RF Diodes

Package:: Die

Datasheet:: MS8150-P2613.pdf

Description:: GAAS SCHOTTKY NON HERMETIC FLIP

Quantity:: RFQ Add To RFQ list

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Inventory:2,556

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Product details

Overview

MS8150-P2613 from Microsemi is a GaAs Schottky diode flip chip designed for microwave/millimeter-wave mixer and detector applications, featuring 65 fF typical capacitance, 3 Ω typical series resistance, >500 GHz cutoff frequency, 5 × 8 mil gold bond pads, and operation from –55°C to +125°C. It is optimized for automotive radar detectors and high-frequency transceivers.

For engineers reviewing the MS8150-P2613 datasheet, MS8150-P2613 pinout, MS8150-P2613 application, or MS8150-P2613 equivalent, key selection criteria include low RS (≤7 Ω max at 10 mA), tight VF range (650–750 mV at 1 mA), IR ≤10 μA at 3 V, and flip-chip thermal insertion compatibility up to 250°C for 10 seconds.

Technical Context

The MS8150-P2613 is a single-junction GaAs Schottky barrier diode fabricated using flip-chip packaging with silicon nitride passivation and high-temperature metallization. Its structure enables RF performance up to 100 GHz via low parasitic capacitance (80 fF max at 0 V) and minimal series resistance.

It operates as a zero-bias detector or active mixer element without external biasing, supported by a SPICE model including IS = 2×10⁻¹³ A, RS = 3 Ω, CJ0 = 45 fF, and EG = 1.42 eV - parameters validated per junction under 25°C conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_F @ 1 mA	650–750 mV: Ensures predictable turn-on behavior in zero-bias detector circuits.
R_S @ 10 mA	≤7 Ω max: Minimizes insertion loss and improves conversion efficiency in mixer designs.
I_R @ 3 V	≤10 μA max: Guarantees low leakage for stable DC restoration in envelope detection.
C_T @ 0 V	≤80 fF: Enables broadband matching up to 100 GHz with reduced parasitic reactance.
Cutoff Frequency	>500 GHz: Confirmed via f_T measurement; supports fundamental mixing at W-band (75–110 GHz).
Operating Temp	–55°C to +125°C: Validated for under-hood automotive radar detector deployment.
Insertion Temp	250°C for 10 s: Compatible with automated flip-chip placement using solder reflow profiles.

Pinout & Package

MS8150-P2613 is a two-terminal GaAs Schottky diode in flip-chip configuration with no wire bonds. Package dimensions are 26 × 13 mils (660 × 330 µm), thickness 5 mils (127 µm), and bond pad size 5 × 8 mils (127 × 203 µm). Gold metallization ensures reliable thermosonic or solder attachment.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Semiconductor junction anode contact	Connected to RF input in series mixer topology; requires impedance-matched microstrip feed.
Cathode	Ground reference terminal	Mounted directly to grounded metal substrate or cavity wall for minimal inductance path.

Key Features

Feature	Design Value
Low series resistance	3 Ω typical: Reduces thermal noise and improves signal-to-noise ratio in weak-signal detection.
High cutoff frequency	>500 GHz: Enables fundamental-mode operation at frequencies beyond 100 GHz without harmonic reliance.
Large gold bond pads	5 × 8 mils: Supports repeatable, high-yield automated flip-chip placement with ±1.5 µm alignment tolerance.
Silicon nitride passivation	Hermetic protection layer: Prevents moisture ingress and oxidation during high-temp assembly and long-term operation.
RoHS-compliant finish	Gold metallization: Eliminates lead-based solder compatibility concerns and meets industrial environmental compliance.

Applications

Automotive Radar Detector	Millimeter-Wave Transceiver
Use Scenario: Detecting reflected FMCW signals in 77 GHz ADAS front radar modules. IC Role / Device Role / Timing Role: Zero-bias Schottky detector converting RF echo to baseband voltage. Use Value: 65 fF C_T and ≤7 Ω R_S enable >15 dB dynamic range at 77 GHz with sub-100 ns response time.	Use Scenario: Fundamental LO-driven mixer in 94 GHz imaging transceiver front-end. IC Role / Device Role / Timing Role: Active switching element in single-ended passive mixer core. Use Value: >500 GHz f_c and 650–750 mV V_F ensure low conversion loss (<7.5 dB) and high port isolation.
Digital Radio Receiver	Test & Measurement Detector
Use Scenario: Downconverting 24–30 GHz 5G mmWave signals in portable base station receivers. IC Role / Device Role / Timing Role: RF envelope detector feeding ADC input stage. Use Value: –55°C to +125°C operating range and ≤10 μA I_R maintain accuracy across outdoor temperature swings.	Use Scenario: Calibrated power sensing in 110 GHz vector network analyzer receiver paths. IC Role / Device Role / Timing Role: Precision RMS-to-DC converter element in wideband detector module. Use Value: Tight 650–750 mV V_F tolerance and 80 fF C_T max enable ±0.3 dB linearity up to +20 dBm incident power.

Automotive Radar Detector

Millimeter-Wave Transceiver

Use Scenario: Detecting reflected FMCW signals in 77 GHz ADAS front radar modules.

IC Role / Device Role / Timing Role: Zero-bias Schottky detector converting RF echo to baseband voltage.

Use Value: 65 fF C_T and ≤7 Ω R_S enable >15 dB dynamic range at 77 GHz with sub-100 ns response time.

Use Scenario: Fundamental LO-driven mixer in 94 GHz imaging transceiver front-end.

IC Role / Device Role / Timing Role: Active switching element in single-ended passive mixer core.

Use Value: >500 GHz f_c and 650–750 mV V_F ensure low conversion loss (<7.5 dB) and high port isolation.

Digital Radio Receiver

Test & Measurement Detector

Use Scenario: Downconverting 24–30 GHz 5G mmWave signals in portable base station receivers.

IC Role / Device Role / Timing Role: RF envelope detector feeding ADC input stage.

Use Value: –55°C to +125°C operating range and ≤10 μA I_R maintain accuracy across outdoor temperature swings.

Use Scenario: Calibrated power sensing in 110 GHz vector network analyzer receiver paths.

IC Role / Device Role / Timing Role: Precision RMS-to-DC converter element in wideband detector module.

Use Value: Tight 650–750 mV V_F tolerance and 80 fF C_T max enable ±0.3 dB linearity up to +20 dBm incident power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode detector/mixer applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MACOM MADR-011020	Higher C_T (120 fF max), lower f_c (~300 GHz), same 26 × 13 mil footprint	Optimized for Ka-band (26–40 GHz); less suitable above 75 GHz	Select when cost sensitivity outweighs W-band performance requirements.
Qorvo QPD1020	Lower R_S (2.5 Ω typ), higher I_R (25 μA max at 3 V), different 30 × 15 mil outline	Better conversion efficiency below 60 GHz; requires PCB layout revision	Choose for improved sensitivity in K-band radar where leakage tolerance is relaxed.

Compared with MADR-011020 and QPD1020, the MS8150-P2613 delivers superior high-frequency linearity (>500 GHz f_c) and tighter V_F control (650–750 mV), making it preferred for 77/94 GHz automotive and imaging systems requiring zero-bias stability and minimal thermal drift.

Availability

MS8150-P2613 is available at Aetrix Electronics and suitable for automotive radar detectors, millimeter-wave transceivers, and 5G digital radio receivers requiring stable component supply across extended temperature ranges and high-volume production.

Supply support for MS8150-P2613 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and aerospace-grade components.

The MS8150 series belongs to Microsemi's Microwave Products line, engineered specifically for millimeter-wave detector and mixer applications demanding ultra-low parasitics and flip-chip assembly compatibility.

FAQ

What is the maximum incident RF power rating for MS8150-P2613?

The MS8150-P2613 is rated for +20 dBm incident power at 25°C, verified under continuous wave conditions. This rating assumes proper thermal sinking through the cathode to a grounded metal carrier. Exceeding this level risks junction overheating and irreversible degradation of the GaAs Schottky barrier, especially above 85°C ambient.

Does MS8150-P2613 require DC bias for operation?

No, the MS8150-P2613 functions as a zero-bias detector due to its low turn-on voltage (650–750 mV) and low series resistance (3 Ω typical). It delivers usable output voltage directly from RF input without external biasing, simplifying circuit design in battery-powered radar sensors and compact transceivers where bias networks add parasitic inductance.

What is the bond pad metallization composition of MS8150-P2613?

The MS8150-P2613 uses RoHS-compliant gold metallization on its 5 × 8 mil bond pads. This finish ensures compatibility with both solder reflow (SnPb or lead-free) and thermosonic flip-chip bonding processes, and provides stable interfacial adhesion during repeated thermal cycling between –55°C and +125°C.

Can MS8150-P2613 be used in series or shunt mixer configurations?

Yes, the MS8150-P2613 supports both series and shunt mixer topologies. Its symmetric two-terminal structure and low C_T (≤80 fF) allow direct integration into balanced or single-ended configurations. In shunt mode, the cathode connects to ground while the anode interfaces with LO and RF ports via hybrid coupler; in series mode, the anode serves as RF input and cathode feeds IF output.

Is SPICE modeling supported for MS8150-P2613?

Yes, the MS8150-P2613 includes a validated per-junction SPICE model with parameters IS = 2×10⁻¹³ A, RS = 3 Ω, N = 1.2, CJ0 = 45 fF, M = 0.50, and EG = 1.42 eV. These values are extracted from measured I-V and C-V data at 25°C and are documented in the official Microsemi datasheet Rev: 2011-02-07, enabling accurate behavioral simulation in mixer and detector circuit analysis.

MS8150-P2613 Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: Die

Packaging:: Tray

Product Status:: Active

Diode Type:: Schottky - Single

Voltage - Peak Reverse (Max):: 3V

Current - Max:: 15 mA

Capacitance @ Vr, F:: -

Resistance @ If, F:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 125°C

Grade:: -

Qualification:: -

Supplier Device Package:: Chip

MS8150-P2613 FAQ

1.How can I place an order for MS8150-P2613 through Aetrix?

Please submit a Request for Quotation (RFQ) for MS8150-P2613 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MS8150-P2613 reliable?

The price and inventory of MS8150-P2613 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS8150-P2613 is usually 5 days.

3.What payment methods are accepted for MS8150-P2613?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS8150-P2613 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MS8150-P2613?

MS8150-P2613 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MS8150-P2613 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MS8150-P2613?

For technical support, including MS8150-P2613 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS8150-P2613 requirements.

6.How does Aetrix verify that MS8150-P2613 is sourced from the original manufacturer or authorized distributors?

All MS8150-P2613 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS8150-P2613 meets industry standards.

7.What is the process for return or replacement of MS8150-P2613?

All MS8150-P2613 units undergo pre-shipment inspection (PSI). If there is an issue with MS8150-P2613, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MS8150-P2613 part is unused and in its original packaging.

Return procedure for MS8150-P2613:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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