Microchip Technology MS8151-P2613

Overview

MS8151-P2613 from Microsemi is a GaAs flip chip Schottky diode optimized for microwave and millimeter-wave mixer and detector applications, with 600–800 mV forward voltage at 1 mA, ≤60 fF zero-bias capacitance, ≤9 Ω series resistance at 10 mA, >500 GHz cutoff frequency, and operation from –55°C to +125°C. It features 26 × 13 mils die size, 5 × 8 mils gold bond pads, and RoHS-compliant gold finish.

For engineers reviewing the MS8151-P2613 datasheet, MS8151-P2613 pinout, MS8151-P2613 application, or MS8151-P2613 equivalent, key selection criteria include low CT (≤60 fF), high f_T (>500 GHz), thermal robustness (250°C reflow tolerance), ESD-sensitive handling requirements, and flip-chip mounting compatibility with microwave hybrid assemblies.

Technical Context

The MS8151-P2613 implements a single-junction GaAs Schottky barrier structure with silicon nitride passivation and high-temperature metallization, enabling stable RF performance up to 100 GHz. Its low CT (≤60 fF) and low R_S (≤9 Ω) jointly support high cutoff frequency and low conversion loss in mixer topologies.

Designed as a bare die flip-chip device, it requires conductive epoxy or solder bump attachment directly to grounded RF substrates. The 5 × 8 mil gold bond pads facilitate reliable thermosonic or reflow bonding without wire interconnects, minimizing parasitic inductance.

Key Specifications

Pinout & Package

MS8151-P2613 is a two-terminal GaAs Schottky diode die in flip-chip configuration. No leadframe or molded package - mounted directly via solder or conductive epoxy onto RF substrate with anode and cathode terminals aligned to matching metal pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer/detector applications.

Compared with MADR-011020 and QPD1020, the MS8151-P2613 delivers superior high-frequency response (>500 GHz f_T) and tighter CT control (≤60 fF) essential for 77 GHz radar and E-band comms, while maintaining compatibility with standard flip-chip assembly processes and RoHS compliance.

Availability

MS8151-P2613 is available at Aetrix Electronics and suitable for automotive radar receivers, millimeter-wave test equipment, and 5G E-band transceivers requiring stable component supply, consistent wafer-lot traceability, and long-term production continuity.

Supply support for MS8151-P2613 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and timing solutions for aerospace, defense, and industrial markets.

The MS8151-P2613 belongs to Microsemi's Microwave Products line, engineered specifically for millimeter-wave mixer and detector functions in radar, communications, and instrumentation where ultra-low capacitance and high cutoff frequency are critical.

FAQ

What is the maximum reverse voltage rating for MS8151-P2613?

The MS8151-P2613 has a maximum reverse voltage rating of 3 V, as specified in its absolute maximum ratings table. This value defines the upper limit of DC or peak RF voltage the diode can withstand without breakdown. Exceeding 3 V risks irreversible junction damage. For applications involving higher RF peaks, external biasing or clamping networks must be used to ensure instantaneous reverse voltage across MS8151-P2613 remains within this limit.

Does MS8151-P2613 require special handling due to ESD sensitivity?

Yes, the MS8151-P2613 is classified as ESD-sensitive per manufacturer documentation and must be handled using Class 1A ESD precautions - including grounded workstations, ionized air, and static-dissipative packaging. Its GaAs Schottky junction is vulnerable to gate oxide-like damage from discharges as low as 100 V. Failure to observe ESD protocols may degrade V_F, increase R_S, or cause catastrophic failure before or after assembly.

What is the typical forward voltage of MS8151-P2613 at 1 mA?

The typical forward voltage of MS8151-P2613 at 1 mA is 600–800 mV, measured at 25°C. This range reflects process variation across wafers and is used for bias network design in mixer and detector circuits. At elevated temperatures, V_F decreases by approximately –1.5 mV/°C, requiring thermal compensation in precision applications using MS8151-P2613.

Can MS8151-P2613 be used in reflow soldering processes?

Yes, MS8151-P2613 supports lead-free reflow with a peak temperature of 250°C for up to 10 seconds, as confirmed in its datasheet. This makes it compatible with standard Pb-free assembly lines. However, due to its flip-chip geometry and ESD sensitivity, thermal profiling must avoid excessive dwell time above 220°C, and post-reflow cleaning must exclude aggressive solvents that could degrade the silicon nitride passivation layer on MS8151-P2613.

Is MS8151-P2613 RoHS compliant?

Yes, MS8151-P2613 is supplied with a RoHS-compliant gold finish, meeting EU Directive 2011/65/EU requirements. The gold metallization contains no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE substances above threshold limits. This compliance applies to both the die surface and bond pads, ensuring compatibility with lead-free assembly and environmentally regulated end equipment using MS8151-P2613.