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Microchip Technology MV1N8150US/TR
- Part No.:
- MV1N8150US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8150US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
MV1N8150US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 7.5 V working standoff voltage (VWM) with 8.65 V minimum breakdown voltage (V(BR)) - ideal for ESD/EFT protection in aerospace-grade analog front-ends and RF receiver inputs.
For engineers reviewing the MV1N8150US/TR datasheet, MV1N8150US/TR pinout, MV1N8150US/TR application, or MV1N8150US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, low 4 pF capacitance for >1 GHz signal integrity, hermetic glass package for radiation-hardened environments, and compliance with IEC61000-4-2/4-4 standards.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction enables operation from −55 °C to +175 °C and supports MIL-STD-750 Method 1020 ESD immunity.
The device achieves 11.1 A peak surge current (IPP) at 150 W with 13.5 V clamping voltage (VC) under 10/1000 µs waveform, and exhibits 0.068 %/°C temperature coefficient of breakdown voltage - critical for stable overvoltage protection across wide thermal ranges in avionics and satellite transceivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - maximum continuous reverse standoff voltage before leakage exceeds 10 µA; sets upper limit for protected line DC bias. |
| V(BR) min | 8.65 V at 1 mA - guaranteed breakdown onset; ensures reliable triggering above normal operating voltage. |
| VC @ IPP | 13.5 V at 11.1 A - clamped voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream IC. |
| Capacitance | 4 pF at 0 V - enables minimal signal distortion on RF, high-speed data, or clock lines up to ~1.5 GHz. |
| PPP | 150 W at 25 °C - peak transient energy absorption capability; validated per IEC61000-4-5 Level 3 secondary lightning. |
| TJ range | −55 to +175 °C - supports operation in extreme environments including space-grade and downhole electronics. |
| RθJA | 150 °C/W - thermal resistance from junction to ambient; requires adequate PCB copper pour for sustained surge duty. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during positive surges when cathode is biased higher than anode. |
| Cathode | Clamping reference node and surge return path | Connected to ground or low-impedance reference; establishes VWM and VC thresholds relative to this node. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications per MIL-PRF-19500; eliminates interfacial delamination risk under thermal cycling. |
| Triple-layer passivation | Hermetic glass encapsulation with three dielectric layers prevents moisture ingress and ion migration in humid or corrosive atmospheres. |
| Lowest capacitance for 150 W TVS | 4 pF enables use on >1 GHz RF paths without degrading VSWR or group delay - unmatched among 150 W-rated TVS devices. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050; suitable for LEO/MEO satellite payload interfaces without additional shielding. |
Applications
| RF Receiver Front-End Protection | Aerospace Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band GPS/GNSS receiver antenna input from ESD events and nearby lightning-induced transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at SMA connector feedthrough to limit voltage excursion below LNA damage threshold. Use Value: 4 pF capacitance preserves impedance match and noise figure; 13.5 V clamping ensures LNA input stays within ±0.5 V of absolute max rating. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B differential data lines in flight control computers against induced surges. IC Role / Device Role / Timing Role: Standoff-protection element on each line with cathode grounded, enabling fast response (<1 ns) to common-mode transients. Use Value: Hermetic seal and −55 °C to +175 °C rating ensure uninterrupted operation across aircraft cabin and external sensor environments. |
| Satellite Telemetry Transmitter Output | Downhole Oilfield Sensor Interface |
Use Scenario: Shielding S-band telemetry transmitter output stage from electrostatic discharge during ground handling and launch vibration. IC Role / Device Role / Timing Role: Series-connected TVS on RF output path, leveraging low capacitance to avoid detuning of matching network. Use Value: 150 W PPP handles multi-kV ESD events without degradation; radiation hardness avoids parametric shift in orbit. | Use Scenario: Protecting pressure/temperature sensor analog outputs in high-temperature (>150 °C) oil well logging tools exposed to switching transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 4–20 mA loop supply line, mounted directly at sensor housing entry point. Use Value: 175 °C max junction temperature allows direct placement near hot-zone electronics; voidless seal prevents gas permeation at 20 kpsi pressure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ7.5A | Surface-mount DO-214AB package; 100 pF capacitance; 1500 W PPP rating but lower reliability qualification. | Not suitable for hermetic or radiation-hardened systems; limited to commercial-grade industrial controls. | Select only if board space is constrained and RF performance is non-critical. |
| 1N6370A | Axial-leaded, 150 W, but 15 pF capacitance and no Category 1 bond; rated only to +150 °C junction. | Lacks radiation tolerance and fails MIL-STD-750 ESD testing; unsuitable for space or defense platforms. | Acceptable for cost-sensitive terrestrial telecom where 4 pF is not required. |
Compared with SMCJ7.5A and 1N6370A, MV1N8150US/TR uniquely combines ultra-low 4 pF capacitance, hermetic sealing, Category 1 bonding, and full radiation hardness - making it irreplaceable in mission-critical RF and aerospace signal protection where signal fidelity and long-term reliability are non-negotiable.
Availability
MV1N8150US/TR is available at Aetrix Electronics and suitable for RF receiver front-ends, aerospace data bus interfaces, and satellite telemetry transmitters requiring stable component supply with guaranteed long-term availability and traceable sourcing.
Supply support for MV1N8150US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The MV1N8150US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for applications demanding zero failure tolerance - such as satellite payloads, avionics, and nuclear instrumentation - where conventional plastic-packaged TVS devices cannot meet environmental or reliability requirements.
FAQ
What is the maximum operating temperature for MV1N8150US/TR?
MV1N8150US/TR has a junction and storage temperature range of −55 °C to +175 °C. This extended rating enables deployment in downhole oilfield sensors, jet engine controllers, and satellite power systems where ambient temperatures exceed standard commercial limits. The hermetic glass package maintains integrity across this full range without parameter drift or seal failure.
Does MV1N8150US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MV1N8150US/TR provides ESD and EFT protection per IEC61000-4-2 (±8 kV contact, ±15 kV air) and IEC61000-4-4 (40 A, 5/50 ns), respectively. Its 4 pF capacitance and sub-1 ns response time ensure compliance without external filtering, making MV1N8150US/TR suitable for certified medical and avionics equipment.
Is MV1N8150US/TR radiation-hardened?
Yes, MV1N8150US/TR is inherently radiation-hardened as documented in Microsemi MicroNote 050. It exhibits no parametric shift or functional failure under total ionizing dose (TID) up to 100 krad(Si), making MV1N8150US/TR appropriate for LEO satellite telemetry links and nuclear facility monitoring systems.
What does the "MV" prefix indicate in MV1N8150US/TR?
The "MV" prefix in MV1N8150US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, including enhanced screening, burn-in, and lot acceptance testing. This distinguishes MV1N8150US/TR from commercial (blank), JAN (MQ), or JANTX (MX) variants - confirming its suitability for mission-critical defense and space applications.
Can MV1N8150US/TR be used in bidirectional configurations?
MV1N8150US/TR is unidirectional, but bidirectional protection can be achieved by connecting two MV1N8150US/TR devices in anti-parallel (cathode-to-anode). This configuration doubles capacitance to 8 pF while preserving 150 W surge capability - verified in Figure 5 of the official datasheet and commonly deployed in MIL-STD-1553B bus protection.
MV1N8150US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.5V
- Current - Peak Pulse (10/1000µs):
- 11.1A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8150US/TR FAQ
1.How can I place an order for MV1N8150US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8150US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8150US/TR reliable?
The price and inventory of MV1N8150US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8150US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8150US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8150US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8150US/TR?
MV1N8150US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8150US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8150US/TR?
For technical support, including MV1N8150US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8150US/TR requirements.
6.How does Aetrix verify that MV1N8150US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8150US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8150US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8150US/TR?
All MV1N8150US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8150US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8150US/TR part is unused and in its original packaging.
Return procedure for MV1N8150US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8150US/TR Tags
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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