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Microchip Technology MV1N8151US/TR
- Part No.:
- MV1N8151US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8151US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,243
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Product details
Overview
MV1N8151US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 8.5 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MV1N8151US/TR datasheet, MV1N8151US/TR pinout, MV1N8151US/TR application, or MV1N8151US/TR equivalent, this device serves as a low-capacitance ESD/EFT protection solution in RF front-ends, avionics data links, and precision analog signal paths where leakage, clamping response, and radiation hardness are critical selection criteria.
Technical Context
The MV1N8151US/TR implements a unique dual-junction architecture: a TVS junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance-lowest among 150 W-rated TVS devices. Its unidirectional conduction supports cathode-to-anode surge suppression only.
It operates across –55 °C to +175 °C junction temperature, delivers 11.1 A peak impulse current (IPP) at 15.6 V clamping voltage (VC), and exhibits 0.073 %/°C breakdown voltage temperature coefficient (αV(BR)), ensuring stable overvoltage protection under thermal stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V maximum continuous reverse standoff voltage - defines safe operating range before conduction begins |
| V(BR) min | 9.50 V minimum breakdown voltage at 1 mA - ensures reliable triggering above normal signal peaks |
| VC @ IPP | 15.6 V clamping voltage at 11.1 A - limits transient-induced voltage overshoot on protected lines |
| CT | 4 pF total capacitance at 0 V - preserves signal integrity up to multi-GHz frequencies |
| PPP | 150 W peak pulse power at 10/1000 µs - withstands IEC61000-4-5 Level 3 surges |
| ID @ VWM | 10 µA maximum standby leakage - minimizes loading on high-impedance sensor or reference circuits |
| TJ Range | –55 °C to +175 °C - supports operation in extended-temperature military and downhole environments |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs, RoHS-compliant matte tin plating over copper leads, cathode band marking, ~340 mg weight. Complies with EIA-296 tape-and-reel standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during reverse-biased surge | Connected to protected line; conducts only when voltage exceeds VWM |
| Cathode | Transient current exit point to ground or return path | Marked by colored band; must be held at lower potential than anode for protection |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in humid or vacuum environments |
| Category 1 metallurgical bond | Meets MIL-STD-750 Method 2074 for high-reliability space and defense systems |
| Triple-layer passivation | Prevents surface leakage and enhances stability under ionizing radiation |
| Lowest capacitance at 150 W rating | Enables use in >1 GHz RF receivers without degrading noise figure or bandwidth |
| Radiation-hardened construction | Validated per Microsemi MicroNote 050 for TID tolerance >100 krad(Si) |
Applications
| Avionics Data Link Protection | RF Front-End Surge Suppression |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines in airborne mission computers from lightning-induced transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed across each signal line to ground, clamping surges while preserving signal edge fidelity. Use Value: 4 pF capacitance avoids signal rise-time degradation; 15.6 V VC prevents latch-up in downstream RS-422 receivers. | Use Scenario: Shielding LNA inputs in S-band radar receivers from ESD events during antenna maintenance or handling. IC Role / Device Role / Timing Role: Anode-to-RF-line, cathode-to-ground placement provides fast (<1 ns) clamping without adding insertion loss. Use Value: Sub-10 µA ID at 8.5 V VWM prevents DC bias shift in GaAs FET bias networks. |
| Precision Sensor Interface Protection | Downhole Telemetry Signal Conditioning |
Use Scenario: Safeguarding bridge-based strain gauge outputs in industrial weigh scales exposed to relay-switching transients. IC Role / Device Role / Timing Role: Placed across differential output pair to suppress common-mode surges while maintaining CMRR. Use Value: 0.073 %/°C αV(BR) ensures consistent clamping threshold across –40 °C to +85 °C ambient range. | Use Scenario: Protecting 4–20 mA loop drivers in oilfield logging tools operating at 175 °C downhole temperatures. IC Role / Device Role / Timing Role: Series-connected TVS on supply rail input to absorb switching spikes from motor drivers. Use Value: 175 °C max TJ rating and hermetic seal prevent parametric shift or failure in high-pressure, high-temperature wells. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ8.5A | Surface-mount DO-214AB package; 100 pF capacitance; 1500 W PPP rating | Higher capacitance limits use to sub-MHz signals; higher PPP suits bulk power rail protection | Select for cost-sensitive commercial PCBs where layout space is constrained and RF performance is not required |
| 1N6105A | Axial-leaded but non-hermetic epoxy package; 15 pF capacitance; 100 W PPP; no radiation hardness spec | Lacks Category 1 bond and triple-layer passivation; unsuitable for space or nuclear environments | Choose for terrestrial industrial controls where reliability requirements are less stringent and budget is primary |
Compared with SMCJ8.5A and 1N6105A, the MV1N8151US/TR uniquely delivers 4 pF capacitance in an axial-leaded, hermetically sealed, radiation-hardened package-making it irreplaceable for high-frequency, high-reliability signal-path protection where parameter stability and long-term hermeticity are mandatory.
Availability
MV1N8151US/TR is available at Aetrix Electronics and suitable for avionics data links, RF front-ends, and precision sensor interfaces requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for MV1N8151US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure ICs for aerospace, defense, and industrial markets.
The MV1N8151US/TR belongs to Microsemi's legacy 1N81xx family of hermetic TVS diodes, engineered specifically for mission-critical transient protection in environments where failure is not an option-including satellite communications, fighter jet avionics, and nuclear instrumentation.
FAQ
What is the clamping voltage of MV1N8151US/TR at its rated peak impulse current?
The MV1N8151US/TR has a maximum clamping voltage (VC) of 15.6 V at 11.1 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures protected circuits remain below critical voltage thresholds during transient events. The MV1N8151US/TR achieves this while maintaining only 4 pF capacitance, distinguishing it from higher-capacitance alternatives.
Is MV1N8151US/TR suitable for bidirectional transient protection?
No, MV1N8151US/TR is strictly unidirectional. For bidirectional protection, two MV1N8151US/TR devices must be connected in anti-parallel, as documented in Figure 5 of the datasheet. This configuration doubles total capacitance to 8 pF but retains low-clamping performance. The MV1N8151US/TR itself conducts only in reverse bias above VWM.
Does MV1N8151US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MV1N8151US/TR provides ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4, as explicitly stated in the Applications/Benefits section of the datasheet. Its 4 pF capacitance and fast response enable compliance without external filtering, making it ideal for high-speed digital and RF interfaces.
What is the meaning of the "MV" prefix in MV1N8151US/TR?
The "MV" prefix in MV1N8151US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. This distinguishes it from commercial-grade variants (blank prefix) and JANTX (MQ) versions, confirming suitability for high-integrity military and space applications.
Can MV1N8151US/TR be used in surface-mount designs?
No, MV1N8151US/TR is an axial-leaded through-hole device with hard-glass hermetic packaging. It is not compatible with SMT reflow processes. For surface-mount equivalents with similar low capacitance, consider Microsemi's USM series or evaluate alternative vendors' MELF-packaged TVS diodes-but none match the MV1N8151US/TR's combination of 4 pF, hermeticity, and JANTXV reliability.
MV1N8151US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 10.3A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8151US/TR FAQ
1.How can I place an order for MV1N8151US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8151US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8151US/TR reliable?
The price and inventory of MV1N8151US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8151US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8151US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8151US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8151US/TR?
MV1N8151US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8151US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8151US/TR?
For technical support, including MV1N8151US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8151US/TR requirements.
6.How does Aetrix verify that MV1N8151US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8151US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8151US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8151US/TR?
All MV1N8151US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8151US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8151US/TR part is unused and in its original packaging.
Return procedure for MV1N8151US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8151US/TR Tags
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