Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology MV1N8152US/TR

Part No.:
MV1N8152US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, A
Datasheet:
AetrixMV1N8152US/TR.pdf
Description:
LOW CAPACITANCE TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,483

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MV1N8152US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 9.0 V working standoff voltage (VWM), 15.6 V maximum clamping voltage (VC) at 9.62 A surge current, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and MIL-STD-750-compliant aerospace interfaces.

For engineers reviewing the MV1N8152US/TR datasheet, MV1N8152US/TR pinout, MV1N8152US/TR application, or MV1N8152US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (≤5 µA), and IEC61000-4-2/4-4 compliance for mission-critical transient suppression in avionics and test equipment.

Technical Context

This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated unidirectional TVS. Its hard-glass hermetic construction ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.

The device operates as a unidirectional clamp with cathode-anode polarity, requiring correct orientation in series with protected lines. It achieves 15.6 V clamping at 9.62 A (10/1000 µs), with <0.075 %/°C breakdown voltage temperature coefficient and 300 V inverse blocking capability.

Key Specifications

ParameterValue and Actual Design Meaning
VWM9.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 5 µA; sets upper limit for protected line DC bias.
VC @ IPP15.6 V at 9.62 A - Clamped voltage during 10/1000 µs surge; determines worst-case overvoltage seen by downstream IC.
PPP150 W - Peak pulse power handling at 25 °C; defines transient energy absorption capacity per event.
CT4 pF - Total terminal capacitance at 0 V; enables use on >1 GHz RF paths without signal distortion.
TJ Range–55 °C to +175 °C - Full military-grade operating range; supports engine bay, avionics bay, and downhole electronics.
ID @ VWM≤5 µA - Low standby leakage ensures minimal loading on high-impedance sensor or reference lines.
V(BR) Min10.4 V @ 1 mA - Guaranteed avalanche onset; ensures reliable triggering above system operating voltage.

Pinout & Package

Package: Hermetically sealed voidless hard-glass axial-leaded case with tungsten slugs; RoHS-compliant matte tin plating over copper leads; cathode band marking; weight ≈340 mg.

Pin/TerminalCircuit RoleDesign Meaning
AnodeInput side of protected lineConnected to signal source or upstream trace; must be placed before sensitive node.
CathodeClamp return pathConnected to ground or low-impedance return; cathode band identifies this terminal visually.

Key Features

FeatureDesign Value
Category 1 metallurgical bondInternal bond structure qualified per MIL-STD-780 for zero-failure reliability in space and defense systems.
Voidless hermetic sealEliminates moisture ingress and internal delamination risk over 20+ year field life in humid or vacuum environments.
Triple-layer passivationEnhanced surface stability against contamination, humidity, and ion migration during thermal cycling.
Lowest 150 W TVS capacitance4 pF enables direct placement on RF antenna feeds, high-speed data lines (USB 3.0+, PCIe), and precision analog inputs.

Applications

Avionics Data Bus ProtectionRadar RF Front-End Clamp

Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from lightning-induced transients in flight control computers.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed in series with each differential pair, referenced to chassis ground.

Use Value: 4 pF capacitance prevents signal integrity degradation at 1 MHz bus rates; 15.6 V clamping ensures FPGA I/O stays within absolute max rating.

Use Scenario: Shielding LNA input stages in X-band radar receivers from ESD and nearby EMP events.

IC Role / Device Role / Timing Role: First-line transient suppressor mounted directly at SMA connector feedthrough before matching network.

Use Value: 9.0 V VWM allows biasing of GaAs FETs while clamping surges below 16 V; hermetic seal prevents outgassing in vacuum-rated radomes.

Downhole Sensor InterfaceHigh-Voltage Test Equipment Input

Use Scenario: Safeguarding pressure/temperature sensor outputs in oil & gas logging tools exposed to 175 °C ambient and cable discharge events.

IC Role / Device Role / Timing Role: Series-connected TVS on analog output line, with cathode tied to isolated instrument ground.

Use Value: –55 °C to +175 °C operation eliminates derating; 300 V inverse blocking withstands induced common-mode spikes on long cables.

Use Scenario: Protecting calibrated input amplifiers in automated test equipment subjected to accidental 1 kV contact discharges.

IC Role / Device Role / Timing Role: Primary clamp on BNC input path, placed before attenuator and gain stage.

Use Value: 150 W PPP rating absorbs multiple 10/1000 µs pulses without parametric shift; 5 µA ID avoids DC offset errors in µV-level measurements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMCJ9.0ASurface-mount DO-214AB package; 1000 W PPP; 12.6 V VC @ 43.3 A; 100 pF CT.Higher power but 25× higher capacitance - unsuitable for RF or high-speed digital lines.Select only for board-space-constrained industrial controls where bandwidth <10 MHz.
1N6375Axial-leaded, non-hermetic epoxy package; 150 W PPP; 12.5 V VC @ 12 A; 15 pF CT; commercial temp range only.Lacks Category 1 bond, voidless seal, and radiation hardness - not qualified for aerospace or downhole use.Acceptable for cost-sensitive telecom power supply rails where reliability requirements are lower.

Compared with SMCJ9.0A and 1N6375, MV1N8152US/TR uniquely combines ultra-low capacitance, hermetic reliability, and extended temperature range - making it the only option for RF, avionics, and extreme-environment transient suppression where signal fidelity and zero-failure operation are mandatory.

Availability

MV1N8152US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, radar RF front-end clamp, and downhole sensor interface applications requiring stable component supply across extended product lifecycles.

Supply support for MV1N8152US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.

The MV1N8152US/TR belongs to Microsemi's 1N8149–1N8182 family of hermetic TVS diodes, engineered specifically for failure-intolerant systems where ESD, lightning, and EMP transients must be suppressed without compromising signal integrity or long-term reliability.

FAQ

What is the maximum clamping voltage of MV1N8152US/TR under standard surge conditions?

The MV1N8152US/TR has a maximum clamping voltage (VC) of 15.6 V when subjected to a 10/1000 µs surge current of 9.62 A. This value is guaranteed across the full operating temperature range and reflects the worst-case voltage imposed on protected circuitry during transient events, ensuring compatibility with 3.3 V and 5 V logic I/O rails.

Is MV1N8152US/TR suitable for bidirectional transient protection?

No - MV1N8152US/TR is strictly unidirectional. For bidirectional protection, two MV1N8152US/TR devices must be connected in anti-parallel, as documented in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but maintains the same clamping performance in both polarities.

Does MV1N8152US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?

Yes - MV1N8152US/TR provides ESD and EFT protection compliant with IEC61000-4-2 (±8 kV contact, ±15 kV air) and IEC61000-4-4 (4 kV burst), as confirmed in the Applications/Benefits section of the official datasheet. Its low capacitance and fast response ensure robust immunity without filtering high-frequency content.

What does the "MV" prefix indicate in MV1N8152US/TR?

The "MV" prefix in MV1N8152US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, including enhanced screening, burn-in, and lot traceability. It signifies that the MV1N8152US/TR meets stringent military requirements for high-reliability applications such as avionics, space systems, and nuclear instrumentation.

Can MV1N8152US/TR be used in reflow soldering processes?

No - MV1N8152US/TR is an axial-leaded glass diode rated for wave or hand soldering only. Its maximum solder temperature is 260 °C for 10 seconds; reflow profiles exceed thermal limits and risk cracking the hermetic glass body or degrading internal bonds. Surface-mount alternatives like SMCJ9.0A should be used for reflow-compatible designs.

MV1N8152US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, A
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
9V
Voltage - Breakdown (Min):
10.4V
Voltage - Clamping (Max) @ Ipp:
15.6V
Current - Peak Pulse (10/1000µs):
9.62A
Power - Peak Pulse:
150W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
A, SQ-MELF

MV1N8152US/TR FAQ

1.How can I place an order for MV1N8152US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for MV1N8152US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MV1N8152US/TR reliable?

The price and inventory of MV1N8152US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8152US/TR is usually 5 days.

3.What payment methods are accepted for MV1N8152US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8152US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MV1N8152US/TR?

MV1N8152US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MV1N8152US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MV1N8152US/TR?

For technical support, including MV1N8152US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8152US/TR requirements.

6.How does Aetrix verify that MV1N8152US/TR is sourced from the original manufacturer or authorized distributors?

All MV1N8152US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8152US/TR meets industry standards.

7.What is the process for return or replacement of MV1N8152US/TR?

All MV1N8152US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8152US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MV1N8152US/TR part is unused and in its original packaging.

Return procedure for MV1N8152US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MV1N8152US/TR Tags

  • MV1N8152US/TR
  • MV1N8152US/TR PDF
  • MV1N8152US/TR Datasheet
  • MV1N8152US/TR Specifications
  • MV1N8152US/TR Images
  • Microchip Technology
  • Microchip Technology MV1N8152US/TR
  • Buy MV1N8152US/TR
  • MV1N8152US/TR Price
  • MV1N8152US/TR Distributor
  • MV1N8152US/TR Supplier
  • MV1N8152US/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER