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Microchip Technology MV1N8153US/TR
- Part No.:
- MV1N8153US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8153US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,027
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Product details
Overview
MV1N8153US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 10.0 V working standoff voltage (VWM), 16.9 V peak clamping voltage (VC) at 11.7 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for high-frequency signal line protection in aerospace and defense systems. It features internal Category 1 metallurgical bonds and triple-layer passivation for radiation-hardened, high-reliability operation.
For engineers reviewing the MV1N8153US/TR datasheet, MV1N8153US/TR pinout, MV1N8153US/TR application, or MV1N8153US/TR equivalent, key selection criteria include low-capacitance ESD/IEC61000-4-2 compliance, axial-leaded thru-hole mounting, hermetic glass package robustness, and precise 10.0 V standoff voltage tolerance for MIL-STD-750-compliant circuit protection.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device delivers 150 W peak pulse power at 10/1000 µs waveform with 16.9 V clamping voltage at 11.7 A surge current, and exhibits <0.1% /°C breakdown voltage temperature coefficient. It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10.0 V - Maximum continuous reverse standoff voltage before conduction begins; sets minimum system operating margin for protected lines. |
| VC @ IPP | 16.9 V at 11.7 A - Clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream ICs. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables >1 GHz signal integrity in RF/data lines without distortion. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports repeated transients per IEC61000-4-5 Level 3. |
| TJ Range | –55 to +175 °C - Extended junction temperature range; qualified for space-grade and engine-control environments. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for thermal management. |
| ID @ VWM | 1 µA - Standby leakage at rated standoff; negligible loading on high-impedance sensor or reference circuits. |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during overvoltage events above VWM. |
| Cathode | Reference node for clamping action | Connected to ground or common return; establishes polarity-specific protection direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and long-term parameter drift in humid or vacuum environments. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/505 reliability requirements for mission-critical aerospace electronics. |
| Triple-layer passivation | Prevents surface leakage and corrosion under thermal cycling and ionizing radiation exposure. |
| Low 4 pF capacitance | Preserves signal rise time and bandwidth in >500 Mbps serial links and RF front-end interfaces. |
| Nonsensitive to ESD | Withstands handling per MIL-STD-750 Method 1020 without parameter shift or failure. |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines against induced lightning transients and coupling noise in airborne platforms. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus line and chassis ground to clamp surges while preserving signal fidelity. Use Value: 4 pF capacitance prevents bit error rate degradation; 16.9 V clamping ensures receiver input stays within absolute maximum ratings. | Use Scenario: Shielding L-band and S-band RF amplifiers and mixers from ESD events during antenna switching or handling. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on RF input/output paths to maintain impedance match and gain flatness. Use Value: Sub-5 pF capacitance avoids detuning of matching networks; hermetic seal prevents performance loss in orbital vacuum. |
| Engine Control Unit (ECU) Sensor Interface | Ground Vehicle Mission Computer I/O |
Use Scenario: Safeguarding analog temperature and pressure sensor inputs in diesel/gas turbine control systems exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Standoff-rated TVS on 0–5 V sensor lines to absorb repetitive 100 V/50 ms transients without degradation. Use Value: 10.0 V VWM aligns with 5 V rail headroom; 150 W PPP handles multiple load-dump events over product lifetime. | Use Scenario: Hardening Ethernet PHY and CAN FD interfaces in armored vehicle computing modules against EMP and conducted surges. IC Role / Device Role / Timing Role: Primary-level transient suppressor on communication ports prior to isolation or filtering stages. Use Value: Meets IEC61000-4-5 Level 3 (1 kV/2 Ω) with no derating; Category 1 bond ensures survivability after 10⁵ surge cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ10A | Surface-mount DO-214AB package; 10.0 V VWM; 17.0 V VC @ 12.3 A; 1500 W PPP; 100 pF CT | Higher capacitance limits use in >100 MHz circuits; unsuitable for hermetic or radiation-hardened designs | Select when board space is constrained and RF performance is not critical. |
| 1N6372 | Axial-leaded glass DO-41; 10 V VWM; 17.0 V VC @ 11.8 A; 150 W PPP; 10 pF CT; commercial-grade reliability | Lacks Category 1 bond and triple-layer passivation; not qualified for aerospace or extended temperature operation | Select for industrial control where cost sensitivity outweighs radiation hardness and -55 °C start-up requirement. |
Compared with SMCJ10A and 1N6372, MV1N8153US/TR uniquely combines 4 pF capacitance, hermetic sealing, Category 1 metallurgy, and –55 °C to +175 °C operation-making it irreplaceable in avionics, satellite, and engine control applications demanding zero-failure reliability.
Availability
MV1N8153US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite RF front-end protection, and engine control unit (ECU) sensor interface applications requiring stable component supply across extended product lifecycles.
Supply support for MV1N8153US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal ICs and discrete components for aerospace, defense, and industrial markets.
The MV1N8153US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option-especially in space, aviation, and nuclear instrumentation systems.
FAQ
What is the working standoff voltage (VWM) of MV1N8153US/TR?
The MV1N8153US/TR has a working standoff voltage (VWM) of 10.0 V, meaning it remains non-conductive up to this DC or repetitive peak reverse voltage. This value is confirmed in the Electrical Characteristics table on page 3 of the Microsemi T4-LDS-xxxx datasheet, with a maximum standby current of 1 µA at this voltage. The 10.0 V VWM allows safe integration into 5 V or 12 V signal chains while providing sufficient margin before clamping activation.
Does MV1N8153US/TR meet IEC61000-4-2 ESD immunity requirements?
Yes, MV1N8153US/TR provides ESD protection per IEC61000-4-2, as explicitly stated in the Applications/Benefits section of the datasheet. Its 4 pF capacitance and fast response enable effective clamping of ±8 kV contact and ±15 kV air discharge events without signal distortion. The device's nonsensitivity to ESD per MIL-STD-750 Method 1020 further validates its robustness during handling and system-level testing.
What is the peak clamping voltage (VC) of MV1N8153US/TR at its rated surge current?
The MV1N8153US/TR has a maximum peak clamping voltage (VC) of 16.9 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures downstream components see no more than 16.9 V during surge events, protecting sensitive receivers and ADC inputs. The low VC/VWM ratio of ~1.69 reflects high clamping efficiency for a 150 W TVS.
Is MV1N8153US/TR suitable for high-temperature environments like engine compartments?
Yes, MV1N8153US/TR is rated for junction temperatures from –55 °C to +175 °C, making it suitable for under-hood automotive, turbine control, and other high-temperature environments. Its hermetic glass package and internal metallurgical bonds prevent parameter drift or failure under sustained thermal stress. The derating curve on page 5 confirms usable power capability even at 125 °C ambient.
What does the "MV" prefix in MV1N8153US/TR signify?
The "MV" prefix in MV1N8153US/TR indicates JANTXV-level reliability qualification per MIL-PRF-19500, the highest military grade for discrete semiconductors. This designation certifies that the MV1N8153US/TR undergoes 100% screening-including burn-in, thermal shock, and life testing-and incorporates Category 1 internal metallurgical bonds for mission-critical applications where zero defects are mandatory.
MV1N8153US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.9V
- Current - Peak Pulse (10/1000µs):
- 8.88A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8153US/TR FAQ
1.How can I place an order for MV1N8153US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8153US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8153US/TR reliable?
The price and inventory of MV1N8153US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8153US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8153US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8153US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8153US/TR?
MV1N8153US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8153US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8153US/TR?
For technical support, including MV1N8153US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8153US/TR requirements.
6.How does Aetrix verify that MV1N8153US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8153US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8153US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8153US/TR?
All MV1N8153US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8153US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8153US/TR part is unused and in its original packaging.
Return procedure for MV1N8153US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8153US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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