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Microchip Technology MV1N8154US/TR
- Part No.:
- MV1N8154US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8154US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,851
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Product details
Overview
MV1N8154US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 11.0 V working standoff voltage (VWM), 18.2 V maximum clamping voltage (VC) at 8.24 A IPP, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and MIL-STD-750-compliant aerospace interfaces.
For engineers reviewing the MV1N8154US/TR datasheet, MV1N8154US/TR pinout, MV1N8154US/TR application, or MV1N8154US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (1 µA max at 11.0 V), IEC61000-4-2/4-4 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated unidirectional TVS. Its hard-glass hermetic construction eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamp with cathode-band polarity, requiring correct orientation in series with protected lines. It achieves 18.2 V clamping at 8.24 A peak impulse current (IPP), with 0.081 %/°C breakdown voltage temperature coefficient and 1.0 W steady-state power dissipation at 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11.0 V - maximum continuous reverse-biased operating voltage before leakage exceeds 1 µA |
| VC @ IPP | 18.2 V at 8.24 A - clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| PPP | 150 W - peak pulse power handling capability under standard 10/1000 µs waveform |
| CT | 4 pF - total terminal capacitance enabling minimal signal distortion in >1 GHz RF paths |
| TJ Range | –55 °C to +175 °C - qualified for extended-temperature military and avionics environments |
| RθJA | 150 °C/W - thermal resistance defining derating above 25 °C ambient per Figure 3 |
| ID @ VWM | 1 µA max - ensures negligible loading on high-impedance sensor or bias networks |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode identified by band; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal during forward conduction | Connected to protected line side; blocks VWM in reverse bias until clamping threshold reached |
| Cathode | Negative terminal; marked with band | Connected to ground or common reference; defines unidirectional clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-PRF-19500 for high-reliability space and defense systems |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term parametric drift |
| Voidless hermetic seal | Eliminates internal moisture ingress and pressure-induced failure modes over lifetime |
| Low-capacitance architecture | 4 pF achieved via integrated series rectifier - enables protection without degrading 5G or radar signal integrity |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for low-dose space applications |
Applications
| RF Transceiver Front-End Protection | Aerospace Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA input stages and antenna switch control lines in S-band radar transceivers from ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional voltage clamp placed in series with RF path to limit transient overvoltage while preserving signal fidelity. Use Value: 4 pF capacitance avoids resonant detuning of matching networks; 18.2 V clamping prevents LNA damage without requiring additional filtering. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data lines in flight control computers against induced transients during lightning strike events. IC Role / Device Role / Timing Role: Standoff-clamp TVS mounted directly at connector entry point to shunt energy before reaching bus transceivers. Use Value: 150 W peak power rating and –55 °C to +175 °C operation ensure reliability across full aircraft environmental envelope. |
| High-Speed Sensor Signal Conditioning | Military GPS Receiver Antenna Port |
Use Scenario: Shielding precision analog outputs of MEMS inertial sensors from board-level ESD during handling and system integration. IC Role / Device Role / Timing Role: Low-leakage (1 µA) TVS placed adjacent to ADC input to prevent latch-up without DC offset error. Use Value: Sub-1 µA standby current avoids loading high-impedance sensor bridges; hermetic seal prevents parameter shift in humid storage conditions. | Use Scenario: Protecting active GPS antenna feed lines in ruggedized handheld receivers exposed to field ESD and conducted surges. IC Role / Device Role / Timing Role: Series-mounted unidirectional TVS between antenna and LNA to block reverse transients while passing DC bias. Use Value: Cathode-band polarity ensures DC bias continuity; 4 pF capacitance preserves carrier-to-noise ratio in 1.575 GHz GPS band. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ11A | Surface-mount DO-214AB package; 100 W PPP; 18.2 V VC at 5.5 A; 100 pF CT | Higher capacitance limits use in >100 MHz circuits; unsuitable for hermetic or radiation-hardened designs | Select when board space is constrained and radiation tolerance is not required |
| 1N8154US/TR (same part, non-MV prefix) | No reliability level designation; commercial-grade only; no Category 1 bond or MIL-STD-750 qualification | Lacks JANTXV-level screening; not approved for flight-critical or space-qualified programs | Select only for non-safety-critical industrial prototypes where cost is primary constraint |
Compared with SMCJ11A and the commercial 1N8154US/TR, MV1N8154US/TR provides uniquely low 4 pF capacitance, hermetic reliability, and radiation tolerance - making it irreplaceable in RF-intensive, high-reliability systems where signal integrity and lifetime assurance are mandatory.
Availability
MV1N8154US/TR is available at Aetrix Electronics and suitable for RF transceiver front-end protection, aerospace data bus interface, and high-speed sensor signal conditioning requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for MV1N8154US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog and mixed-signal ICs for aerospace, defense, and industrial markets.
MV1N8154US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option - including satellite payloads, avionics, and nuclear instrumentation.
FAQ
What is the clamping voltage of MV1N8154US/TR at its rated peak impulse current?
MV1N8154US/TR has a maximum clamping voltage (VC) of 18.2 V at 8.24 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during surge events. The low VC ensures sensitive downstream components like LNAs or bus transceivers remain within safe operating limits. MV1N8154US/TR maintains this performance across its full –55 °C to +175 °C junction temperature range.
Is MV1N8154US/TR suitable for bidirectional transient protection?
MV1N8154US/TR is inherently unidirectional due to its cathode-band polarity and series-rectifier architecture. For bidirectional protection, two MV1N8154US/TR devices must be connected in anti-parallel (cathode-to-anode), as shown in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains low clamping and high reliability. Direct bidirectional equivalents (e.g., 1N8154B) are not offered in the MV-series.
What does the "MV" prefix signify in MV1N8154US/TR?
The "MV" prefix in MV1N8154US/TR indicates JANTXV-level reliability qualification per MIL-PRF-19500, including Category 1 internal metallurgical bonds, enhanced screening, and extended temperature testing. It distinguishes this version from commercial (blank), JAN (MQ), or JANTX (MX) variants. MV1N8154US/TR is fully traceable, lot-controlled, and certified for use in flight-critical and space applications where failure modes must be eliminated.
Does MV1N8154US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MV1N8154US/TR is explicitly rated for ESD immunity per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4, as stated in the Applications/Benefits section of the datasheet. Its 4 pF capacitance and fast response time enable effective suppression of contact and air-discharge ESD events up to ±15 kV, while maintaining signal integrity in high-speed interfaces. MV1N8154US/TR also supports secondary lightning protection per select levels of IEC61000-4-5.
What is the thermal resistance and derating behavior of MV1N8154US/TR?
MV1N8154US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W, measured on standard PCB mounting. Its peak pulse power must be derated linearly above 25 °C ambient, following the curve in Figure 3 of the datasheet - e.g., at 70 °C ambient, maximum PPP drops to ~105 W. Steady-state power is limited to 1.0 W at 25 °C, decreasing with rising temperature. Proper heatsinking or copper pour is recommended for sustained surge duty cycles. MV1N8154US/TR remains functional up to +175 °C junction temperature.
MV1N8154US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.4V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 8.24A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8154US/TR FAQ
1.How can I place an order for MV1N8154US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8154US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8154US/TR reliable?
The price and inventory of MV1N8154US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8154US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8154US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8154US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8154US/TR?
MV1N8154US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8154US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8154US/TR?
For technical support, including MV1N8154US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8154US/TR requirements.
6.How does Aetrix verify that MV1N8154US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8154US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8154US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8154US/TR?
All MV1N8154US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8154US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8154US/TR part is unused and in its original packaging.
Return procedure for MV1N8154US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8154US/TR Tags
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