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Microchip Technology MV1N8155US/TR
- Part No.:
- MV1N8155US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8155US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,360
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Product details
Overview
MV1N8155US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and 13.8 V minimum breakdown voltage, with clamping voltage of 20.2 V at 7.42 A surge current - ideal for ESD/EFT protection in aerospace and military communication interfaces.
For engineers reviewing the MV1N8155US/TR datasheet, MV1N8155US/TR pinout, MV1N8155US/TR application, or MV1N8155US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical systems.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction with tungsten slugs enables stable performance across –55 °C to +175 °C junction temperature range.
The device operates with 12.0 V working standoff voltage (VWM), 13.8 V minimum breakdown voltage (V(BR)), and clamps to 20.2 V at 7.42 A peak impulse current (IPP), delivering robust secondary lightning protection per select IEC61000-4-5 levels without degrading high-speed signal integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPP) | 150 W at 10/1000 µs - sustains high-energy transients without failure in telecom/data line protection. |
| Capacitance (CT) | 4 pF at 0 V - preserves signal integrity up to multi-GHz frequencies in RF and high-baud-rate interfaces. |
| Working Standoff Voltage (VWM) | 12.0 V - blocks normal operating voltages while triggering only during overvoltage events. |
| Clamping Voltage (VC) | 20.2 V at 7.42 A IPP - limits downstream voltage stress to safe levels for protected ICs. |
| Breakdown Voltage (V(BR)) | Min 13.8 V at 1 mA - ensures precise, repeatable conduction onset for predictable protection timing. |
| Junction Temperature Range | –55 °C to +175 °C - supports operation in extreme environments including avionics and downhole electronics. |
| Thermal Resistance (RθJA) | 150 °C/W - enables reliable power dissipation on standard PCB layouts without forced cooling. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point under reverse bias | Connected to protected line; conducts surge current toward cathode during overvoltage. |
| Cathode | Transient current exit point under reverse bias | Connected to ground or common reference; completes low-impedance path for energy diversion. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration, ensuring long-term parameter stability in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Meets MIL-STD-883 requirements for high-reliability applications including space-grade and defense systems. |
| Triple-layer passivation | Prevents surface leakage and corrosion under thermal cycling and ionizing radiation exposure. |
| Low 4 pF capacitance | Enables use on >1 GHz RF paths and 10+ Gbps serial links without signal distortion or insertion loss penalty. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ESD (±15 kV air/±8 kV contact), EFT (40 A), and lightning surge (up to 4 kV line-earth) immunity testing. |
Applications
| Aerospace Data Bus Protection | Military Radio Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced transients during lightning strikes or ESD events. IC Role / Device Role / Timing Role: Unidirectional TVS clamping transient energy before it reaches bus transceivers. Use Value: Maintains <1 ns response time and 4 pF loading to preserve signal edge rate and bit error rate in deterministic avionics networks. |
Use Scenario: Shielding HF/VHF receiver input stages from antenna-coupled surges and nearby weapon discharge EMP. IC Role / Device Role / Timing Role: Fast-acting voltage clamp limiting RF front-end IC damage during field-deployed operation. Use Value: Withstands 150 W pulses and –55 °C to +175 °C operation, enabling uninterrupted comms in extreme tactical environments. |
| Satellite Command & Telemetry | Downhole Oilfield Instrumentation |
Use Scenario: Safeguarding RS-422/RS-485 telemetry links between satellite subsystems exposed to single-event transients and TID effects. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing latch-up-inducing spikes on command interfaces. Use Value: Inherent radiation hardness per MicroNote 050 and Category 1 bond ensure functional integrity after 100+ krad(Si) total ionizing dose. |
Use Scenario: Protecting sensor signal conditioning circuits in borehole tools subjected to thermal shock and cable discharge events. IC Role / Device Role / Timing Role: Hermetic glass package prevents seal degradation at 175 °C ambient and 10,000 psi pressure. Use Value: Stable 12.0 V standoff and 20.2 V clamping prevent false triggering or overvoltage damage during extended high-temp logging runs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ12A | Surface-mount SMC package; 100 W PPP; 15 pF capacitance; 13.3 V VWM; 19.9 V VC @ 7.6 A | Higher capacitance limits use in >500 MHz paths; lacks hermetic seal and Category 1 bond | Preferred for cost-sensitive industrial PCBs where size and reflow compatibility outweigh extreme reliability needs. |
| 1N6375 | Axial-leaded DO-41; 150 W PPP; 12 pF capacitance; 12 V VWM; 19.5 V VC @ 7.7 A; non-hermetic epoxy package | No radiation hardness or MIL-qualified bonding; limited to 150 °C max junction temperature | Acceptable for commercial-grade telecom infrastructure where full JANTXV-level qualification is not required. |
Compared with SMCJ12A and 1N6375, MV1N8155US/TR provides superior high-frequency performance (4 pF vs ≥12 pF), guaranteed hermetic reliability, and extended temperature capability - making it the only choice for flight-critical, radiation-exposed, or ultra-high-speed analog/digital interface protection.
Availability
MV1N8155US/TR is available at Aetrix Electronics and suitable for aerospace data buses, military radio front-ends, satellite telemetry links, downhole instrumentation, and high-reliability industrial control systems requiring stable component supply across extended product lifecycles.
Supply support for MV1N8155US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
MV1N8155US/TR belongs to Microsemi's legacy 1N81xx family of hermetic TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option - emphasizing zero-defect reliability, extreme environmental resilience, and signal-integrity-preserving low capacitance.
FAQ
What is the clamping voltage of MV1N8155US/TR at its rated peak impulse current?
The MV1N8155US/TR has a maximum clamping voltage (VC) of 20.2 V when subjected to its rated peak impulse current (IPP) of 7.42 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and ensures downstream circuitry remains within safe operating voltage limits during transient events. The MV1N8155US/TR maintains this clamping performance across its full –55 °C to +175 °C junction temperature range.
Is MV1N8155US/TR compliant with RoHS and qualified for high-reliability applications?
Yes, MV1N8155US/TR is RoHS compliant (e3 marking) and qualified to JANTXV reliability level per MIL-PRF-19500. It features Category 1 internal metallurgical bonds, triple-layer passivation, and voidless hermetic glass packaging - all verified per MIL-STD-750 test methods. These attributes make MV1N8155US/TR suitable for spaceflight, avionics, and other applications demanding zero-defect assurance.
How does the 4 pF capacitance of MV1N8155US/TR benefit high-speed interface protection?
The 4 pF capacitance of MV1N8155US/TR minimizes signal loading on high-frequency lines, preserving rise/fall times and reducing insertion loss in applications such as RF front-ends, high-speed serial links, and radar data buses. Unlike higher-capacitance TVS devices, MV1N8155US/TR avoids distorting multi-GHz waveforms or inducing jitter - a critical advantage for maintaining BER in digital communications and phase accuracy in analog sensing.
Can MV1N8155US/TR be used for bidirectional transient protection?
MV1N8155US/TR is inherently unidirectional, but bidirectional protection can be achieved by connecting two MV1N8155US/TR devices in anti-parallel configuration, as documented in Microsemi Application Figure 5. This arrangement doubles the effective capacitance to 8 pF while retaining 150 W per polarity and full hermetic reliability - commonly deployed in balanced differential interfaces like RS-422 or CAN FD physical layers.
What is the maximum steady-state power dissipation of MV1N8155US/TR at 25 °C ambient?
The MV1N8155US/TR has a maximum steady-state (average) power rating of 1.0 W at TA = 25 °C, based on its thermal resistance of 150 °C/W and maximum junction temperature of +175 °C. This rating assumes adequate PCB thermal management; derating is required above 25 °C ambient per the published derating curve. The MV1N8155US/TR is optimized for transient, not continuous, power handling.
MV1N8155US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.8V
- Voltage - Clamping (Max) @ Ipp:
- 20.2V
- Current - Peak Pulse (10/1000µs):
- 7.42A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8155US/TR FAQ
1.How can I place an order for MV1N8155US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8155US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8155US/TR reliable?
The price and inventory of MV1N8155US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8155US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8155US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8155US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8155US/TR?
MV1N8155US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8155US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8155US/TR?
For technical support, including MV1N8155US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8155US/TR requirements.
6.How does Aetrix verify that MV1N8155US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8155US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8155US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8155US/TR?
All MV1N8155US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8155US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8155US/TR part is unused and in its original packaging.
Return procedure for MV1N8155US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8155US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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