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Microchip Technology MV1N8156US/TR
- Part No.:
- MV1N8156US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8156US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,665
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Product details
Overview
MV1N8156US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 13.0 V working standoff voltage (VWM), 15.2 V minimum breakdown voltage (V(BR)), 22.3 V maximum clamping voltage (VC) at 11.7 A peak surge current (IPP), and 4 pF capacitance-designed for ESD/EFT protection in high-frequency RF front-ends and aerospace telemetry interfaces.
For engineers reviewing the MV1N8156US/TR datasheet, MV1N8156US/TR pinout, MV1N8156US/TR application, or MV1N8156US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical systems.
Technical Context
This TVS integrates a series-opposed rectifier diode to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction with tungsten slugs enables operation from –55 °C to +175 °C and supports 150 W peak pulse power at 10/1000 µs waveform.
The device uses internal "Category 1" metallurgical bonds per MIL-STD-750, ensuring radiation hardness and immunity to ESD per method 1020. It delivers 22.3 V clamping at 11.7 A IPP with <0.5 µA standby leakage at 13.0 V VWM, making it suitable for high-reliability analog signal paths where parasitic capacitance must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13.0 V - Maximum continuous reverse-bias voltage before conduction begins; sets operating margin for protected circuitry. |
| V(BR) min | 15.2 V - Minimum breakdown voltage at 1 mA; defines lower bound of clamping onset threshold. |
| VC max | 22.3 V - Clamping voltage at 11.7 A IPP; determines worst-case overvoltage seen by downstream ICs. |
| IPP | 11.7 A - Peak surge current at 10/1000 µs waveform; quantifies transient energy handling capability. |
| CT | 4 pF - Total junction capacitance at 0 V; enables use in >1 GHz RF signal lines without impedance disruption. |
| PPP | 150 W - Peak pulse power rating; supports robust lightning-induced surge suppression per IEC61000-4-5 Level 3. |
| TJ range | –55 °C to +175 °C - Junction temperature range; validates suitability for avionics and downhole electronics. |
Pinout & Package
Package: Axial-leaded hermetically sealed voidless hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink terminal during reverse-bias clamping | Connected to protected signal line; conducts surge current toward ground when VC exceeds VWM. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground or low-impedance return path; establishes unidirectional clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal voids-critical for long-term reliability in vacuum or high-humidity environments. |
| Series-opposed rectifier integration | Enables 4 pF capacitance-lowest among 150 W TVS devices-without compromising clamping speed or VWM stability. |
| Category 1 metallurgical bond | Meets MIL-STD-750 requirements for high-reliability applications including space-grade and military avionics. |
| Triple-layer passivation | Provides enhanced surface insulation and resistance to contamination-induced leakage in harsh industrial settings. |
Applications
| Radar Transceiver Front-End Protection | Satellite Telemetry Signal Conditioning |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from ESD events and induced transients during antenna switching. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at SMA connector feedthrough to limit voltage excursion below LNA damage threshold. Use Value: 4 pF capacitance avoids detuning of 1.2–1.4 GHz matching networks; 22.3 V VC ensures LNA input stays within ±0.5 V of supply rail during 8 kV contact discharge. | Use Scenario: Safeguarding S-band telemetry demodulator inputs against launch vibration-induced arcing and solar flare-induced surges. IC Role / Device Role / Timing Role: Standoff-protection element on differential analog data lines between ADC and RF downconverter. Use Value: –55 °C to +175 °C operation supports orbital thermal cycling; Category 1 bond prevents interfacial failure after 10⁵ thermal cycles. |
| Aerospace Flight Control Sensor Interface | Downhole Oilfield Instrumentation |
Use Scenario: Shielding analog outputs of MEMS inertial measurement units (IMUs) from ignition noise and static discharge in jet engine bays. IC Role / Device Role / Timing Role: Low-leakage (≤0.5 µA at 13 V) TVS placed adjacent to op-amp buffer output driving 100 m twisted-pair cable. Use Value: <0.5 µA ID prevents DC offset drift in precision 24-bit sigma-delta ADC reference paths; hermetic seal withstands jet fuel vapor exposure. | Use Scenario: Protecting pressure/temperature sensor signals transmitted over 2 km of armored cable in geothermal wellheads. IC Role / Device Role / Timing Role: Primary surge arrestor at junction box entry point, rated for IEC61000-4-5 Level 4 (4 kV line-earth). Use Value: 150 W PPP handles multiple lightning-induced surges without degradation; 175 °C max TJ accommodates ambient temperatures up to 150 °C at depth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ13A | Surface-mount DO-214AB package; 13 V VWM; 21.5 V VC @ 12.3 A; 100 pF capacitance | Higher capacitance limits use to sub-100 MHz circuits; lacks hermetic seal and Category 1 bond | Preferred for cost-sensitive commercial PCBs where size and reflow compatibility outweigh reliability needs. |
| 1N6105A | Axial-leaded glass package; 13 V VWM; 21.2 V VC @ 12.5 A; 10 pF capacitance; non-hermetic | No Category 1 bond or triple-layer passivation; not qualified for aerospace or downhole use | Acceptable for industrial control panels with moderate ESD risk and ambient ≤125 °C. |
Compared with MV1N8156US/TR, SMCJ13A trades hermetic reliability and ultra-low capacitance for SMT manufacturability, while 1N6105A offers similar axial form factor but omits radiation hardness and voidless sealing-making MV1N8156US/TR the only choice for flight-critical or extreme-environment deployments.
Availability
MV1N8156US/TR is available at Aetrix Electronics and suitable for radar transceivers, satellite telemetry links, aerospace IMU interfaces, and downhole instrumentation requiring stable component supply across extended product lifecycles.
Supply support for MV1N8156US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and extended-temperature solutions.
The MV1N8156US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for mission-critical transient protection where failure is not an option-especially in RF, telemetry, and harsh-environment sensing.
FAQ
What is the clamping voltage of MV1N8156US/TR at its rated peak surge current?
The MV1N8156US/TR has a maximum clamping voltage (VC) of 22.3 V when subjected to its rated peak impulse current (IPP) of 11.7 A under the standard 10/1000 µs waveform. This value is measured at TA = 25 °C and guarantees that protected circuitry will not experience overvoltage beyond this level during transient events, preserving integrity of downstream components such as LNAs or ADC drivers.
Is MV1N8156US/TR suitable for bidirectional transient protection?
No-MV1N8156US/TR is strictly unidirectional. For bidirectional protection, two MV1N8156US/TR devices must be connected in anti-parallel configuration, as documented in Microsemi's Figure 5. This arrangement doubles total capacitance to 8 pF but retains the same VWM and clamping performance in both polarities, enabling use in AC-coupled or differential signal paths.
Does MV1N8156US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes-MV1N8156US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its low clamping voltage, fast response time, and hermetic construction ensure consistent performance across repeated 4 kV contact and 8 kV air-discharge events, making MV1N8156US/TR appropriate for equipment requiring CE marking in industrial and aerospace domains.
What is the maximum operating temperature for MV1N8156US/TR?
The MV1N8156US/TR supports a junction temperature range of –55 °C to +175 °C, verified per Microsemi's T4-LDS-xxxx specification. This extended range allows deployment in environments such as jet engine bays, geothermal wellheads, and satellite payload compartments where ambient temperatures exceed standard commercial limits, and confirms thermal survivability during solder reflow up to 260 °C for 10 seconds.
How does the "MV" prefix in MV1N8156US/TR indicate its qualification level?
The "MV" prefix in MV1N8156US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, signifying enhanced screening including burn-in, temperature cycling, and hermeticity testing. This distinguishes MV1N8156US/TR from commercial (blank prefix) or JANTX (MX) variants, and confirms its suitability for high-integrity applications where field failure is unacceptable-such as flight control systems or deep-space communication hardware.
MV1N8156US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22.3V
- Current - Peak Pulse (10/1000µs):
- 6.73A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8156US/TR FAQ
1.How can I place an order for MV1N8156US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8156US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8156US/TR reliable?
The price and inventory of MV1N8156US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8156US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8156US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8156US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8156US/TR?
MV1N8156US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8156US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8156US/TR?
For technical support, including MV1N8156US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8156US/TR requirements.
6.How does Aetrix verify that MV1N8156US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8156US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8156US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8156US/TR?
All MV1N8156US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8156US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8156US/TR part is unused and in its original packaging.
Return procedure for MV1N8156US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8156US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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