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Microchip Technology MV1N8157US/TR
- Part No.:
- MV1N8157US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8157US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
MV1N8157US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 15.0 V working standoff voltage (VWM), 25.1 V peak clamping voltage (VC) at 11.7 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for 10/1000 µs waveform. It employs a series-connected rectifier diode architecture to achieve ultra-low capacitance and is designed for ESD/EFT protection in high-frequency RF, telecom, and aerospace signal lines.
For engineers reviewing the MV1N8157US/TR datasheet, MV1N8157US/TR pinout, MV1N8157US/TR application, or MV1N8157US/TR equivalent, key selection criteria include its 15.0 V VWM, 25.1 V VC under 11.7 A surge, 4 pF low capacitance, Category 1 metallurgical bond reliability, and axial-leaded glass package suitable for high-reliability through-hole mounting.
Technical Context
This TVS uses a unique dual-element structure: a Zener-like avalanche junction in series with a reverse-oriented rectifier diode, enabling bidirectional blocking while maintaining unidirectional clamping behavior and minimizing total capacitance to 4 pF. The voidless hard-glass hermetic seal and tungsten slug construction ensure stable thermal performance and radiation hardness per MicroNote 050.
It operates across –55 °C to +175 °C junction temperature, with 150 °C/W thermal resistance and 1.0 W steady-state power dissipation at 25 °C ambient. Its IEC61000-4-2/4-4 compliance and secondary lightning protection capability per IEC61000-4-5 make it suitable for mission-critical interface protection where failure is not tolerable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15.0 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA. |
| VC @ IPP | 25.1 V at 11.7 A - Clamped voltage during 10/1000 µs surge, limiting downstream IC stress. |
| CT | 4 pF - Enables use in >1 GHz RF paths without signal integrity degradation. |
| PPP | 150 W - Peak transient energy absorption capability under standard 10/1000 µs waveform. |
| TJ Range | –55 °C to +175 °C - Supports operation in extended-temperature avionics and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance defines maximum allowable power dissipation on standard PCB layout. |
| Reliability Level | JANTXV-grade - Qualified to MIL-PRF-19500/513 with Category 1 internal metallurgical bonds. |
Pinout & Package
Package: Axial-leaded voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (during clamping) | Connected to protected line; conducts surge current toward ground when V > VWM. |
| Cathode | Reference terminal / polarity indicator | Marked by band; tied to system ground or reference plane; defines unidirectional conduction direction. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via series rectifier-diode topology-enables protection of >1 GHz RF front-ends without detuning. |
| Category 1 metallurgical bond | Internal high-reliability bond qualified per MIL-PRF-19500/513-ensures long-term stability under thermal cycling and vibration. |
| Hermetic glass seal | Voidless hard-glass encapsulation prevents moisture ingress and parameter drift over 20+ year service life. |
| ESD/EFT compliance | Validated to IEC61000-4-2 (±15 kV air, ±8 kV contact) and IEC61000-4-4 (40 A, 5/50 ns), supporting industrial EMC certification. |
Applications
| RF Transceiver Front-End Protection | Satellite L-band Downconverter Input |
|---|---|
Use Scenario: Protecting sensitive LNAs and mixers in wireless base station transceivers from ESD events and nearby lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at SMA connector feedthrough to limit voltage excursion before signal enters active circuitry. Use Value: 4 pF capacitance avoids impedance mismatch and insertion loss in 50 Ω RF path; 25.1 V clamping ensures LNA survival under IEC61000-4-2 contact discharge. |
Use Scenario: Safeguarding low-noise amplifier inputs in orbital satellite downconverters exposed to space-grade ESD and single-event transients. IC Role / Device Role / Timing Role: Primary transient shunt at RF input port, leveraging JANTXV qualification and radiation hardness per MicroNote 050. Use Value: –55 °C to +175 °C operating range and Category 1 bond support mission-critical uptime; 150 W PPP handles worst-case induced surges in L-band antenna coupling. |
| Aerospace Avionics Data Bus Interface | High-Speed Serial Link (RS-422/485) Protection |
Use Scenario: Shielding ARINC 429 or MIL-STD-1553B data lines in flight control computers from induced transients during lightning strike testing. IC Role / Device Role / Timing Role: Point-of-entry TVS on differential bus lines, mounted directly at connector backshell with minimal trace length. Use Value: 15.0 V VWM matches nominal 12 V bus swing; 25.1 V VC ensures receiver ICs remain within absolute maximum ratings during 10/1000 µs surges up to 11.7 A. |
Use Scenario: Protecting isolated RS-422 transceivers in industrial programmable logic controllers from ground loop surges and EFT bursts. IC Role / Device Role / Timing Role: Unidirectional clamp on each signal line (A/B), referenced to isolated ground plane. Use Value: Low 0.5 µA ID at VWM minimizes bias current error; 4 pF capacitance preserves signal edge rate up to 50 Mbps without jitter increase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ15A | Surface-mount DO-214AB package; 15 V VWM; 24.4 V VC @ 12.9 A; 170 pF capacitance. | Higher capacitance limits use to sub-100 MHz signals; lacks JANTXV qualification and radiation hardness. | Select when board space is constrained and RF performance is not required; verify thermal derating on FR-4. |
| 1N6105A | Axial-leaded, non-hermetic epoxy package; 15 V VWM; 24.4 V VC @ 12.9 A; 100 pF capacitance; commercial-grade only. | No Category 1 bond or hermetic seal; not rated for aerospace or extended-temperature operation. | Acceptable for cost-sensitive industrial controls where reliability requirements are less stringent. |
Compared with MV1N8157US/TR, SMCJ15A trades ultra-low capacitance and hermetic reliability for compact SMT footprint, while 1N6105A offers lower cost but sacrifices radiation hardness, temperature range, and long-term parameter stability-making MV1N8157US/TR the only choice for JANTXV-grade RF and aerospace protection.
Availability
MV1N8157US/TR is available at Aetrix Electronics and suitable for RF transceiver front-end protection, satellite downconverter inputs, aerospace avionics data buses, and high-speed serial link protection requiring stable component supply across extended temperature and high-reliability environments.
Supply support for MV1N8157US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and RF solutions for aerospace, defense, and industrial markets.
The MV1N8157US/TR belongs to Microsemi's 1N8149–1N8182 family of hermetically sealed TVS diodes, engineered specifically for ultra-low-capacitance transient protection in mission-critical RF and high-reliability systems where parameter stability and long-term survivability are mandatory.
FAQ
What is the clamping voltage of MV1N8157US/TR at its rated surge current?
The MV1N8157US/TR has a maximum peak clamping voltage (VC) of 25.1 V when subjected to its rated 11.7 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and ensures downstream components remain within safe operating voltage limits during transient events. The MV1N8157US/TR maintains this clamping performance across its full –55 °C to +175 °C junction temperature range.
Is MV1N8157US/TR suitable for bidirectional signal line protection?
MV1N8157US/TR is a unidirectional TVS and must be used in anti-parallel pairs to protect bidirectional lines. Per Microsemi's Figure 5, two MV1N8157US/TR devices mounted cathode-to-anode provide symmetrical clamping, though total capacitance doubles to 8 pF. For true bidirectional low-capacitance protection, no single-device alternative exists in this family-MV1N8157US/TR itself remains strictly unidirectional.
Does MV1N8157US/TR meet MIL-STD-750 ESD sensitivity requirements?
Yes, MV1N8157US/TR is nonsensitive to ESD per MIL-STD-750 Method 1020, meaning it withstands handling without degradation. This immunity supports robust manufacturing flow in defense and aerospace assembly lines. The MV1N8157US/TR achieves this via hermetic sealing and internal metallurgical design-not merely surface passivation-making it suitable for Class 0 ESD-sensitive environments.
What is the meaning of "MV" in MV1N8157US/TR?
The "MV" prefix in MV1N8157US/TR denotes JANTXV reliability level per MIL-PRF-19500/513, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. It distinguishes this grade from commercial (blank), JAN (MQ), or JANTX (MX) versions. The "US" suffix specifies the axial-leaded surface-finish variant, and "/TR" indicates tape-and-reel packaging per EIA-296.
Can MV1N8157US/TR be used in place of standard 15 V TVS diodes like P6KE15A?
MV1N8157US/TR is not a drop-in replacement for P6KE15A due to fundamental differences: it delivers 4 pF vs. ~250 pF capacitance, uses hermetic glass vs. epoxy packaging, and meets JANTXV vs. commercial reliability standards. While both have ~15 V VWM, substituting MV1N8157US/TR requires verifying mechanical fit (axial lead spacing), thermal layout (150 °C/W RθJA), and system-level ESD test compliance-especially in RF paths where capacitance directly impacts performance.
MV1N8157US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.1V
- Current - Peak Pulse (10/1000µs):
- 5.98A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8157US/TR FAQ
1.How can I place an order for MV1N8157US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8157US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8157US/TR reliable?
The price and inventory of MV1N8157US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8157US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8157US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8157US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8157US/TR?
MV1N8157US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8157US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8157US/TR?
For technical support, including MV1N8157US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8157US/TR requirements.
6.How does Aetrix verify that MV1N8157US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8157US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8157US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8157US/TR?
All MV1N8157US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8157US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8157US/TR part is unused and in its original packaging.
Return procedure for MV1N8157US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8157US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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