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Microchip Technology MV1N8158US/TR
- Part No.:
- MV1N8158US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8158US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,445
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Product details
Overview
MV1N8158US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 17.0 V working standoff voltage (VWM) with 27.7 V maximum clamping voltage (VC) at 300 A IPP.
For engineers reviewing the MV1N8158US/TR datasheet, MV1N8158US/TR pinout, MV1N8158US/TR application, or MV1N8158US/TR equivalent, key selection criteria include low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, Category 1 metallurgical bonding for radiation-hardened environments, and axial-leaded through-hole mounting compatibility in hard-glass hermetic construction.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its voidless hermetic glass package ensures long-term reliability under thermal cycling and humidity stress.
The device operates across –55 °C to +175 °C junction temperature range, supports 1.0 W steady-state power dissipation at 25 °C ambient, and exhibits 0.090 %/°C breakdown voltage temperature coefficient - enabling stable clamping performance in wide-temperature industrial and aerospace systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 17.0 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA |
| V(BR) min | 19.0 V - Minimum breakdown voltage at 1 mA test current, defining reliable avalanche onset threshold |
| VC @ IPP | 27.7 V at 300 A - Clamping voltage during 10/1000 µs surge, limiting downstream circuit stress |
| Capacitance | 4 pF at 0 V - Enables use on >1 GHz RF lines and high-speed data interfaces without signal degradation |
| PPP | 150 W - Peak pulse power rating at 25 °C, validated for lightning-induced transients per IEC61000-4-5 |
| TJ Range | –55 to +175 °C - Supports deployment in extended-temperature avionics, downhole, and military electronics |
| RθJA | 150 °C/W - Thermal resistance indicating need for PCB copper area or heatsinking under sustained surge conditions |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts during reverse-transient suppression only when clamped |
| Cathode | Negative terminal; marked with band | Connected to ground reference; defines unidirectional polarity and determines clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture ingress and delamination risk over 20+ year field life in harsh environments |
| Category 1 metallurgical bond | Meets MIL-STD-883 Class B requirements for radiation hardness and mechanical robustness in space-grade applications |
| Triple-layer passivation | Prevents surface leakage and corrosion under high-humidity or salt-spray conditions |
| Low 4 pF capacitance | Preserves signal integrity on USB 3.0, HDMI, RF front-end, and high-speed serial links without added impedance mismatch |
| Nonsensitive to ESD | Withstands >30 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure |
Applications
| RF Transceiver Protection | Satellite Command Link |
|---|---|
Use Scenario: Protecting L-band antenna feedlines from induced lightning surges and ESD events during ground handling. IC Role / Device Role / Timing Role: Unidirectional TVS placed between RF port and matching network to clamp transients while preserving S11/S22 performance. Use Value: 4 pF capacitance avoids detuning of narrowband filters; 27.7 V VC limits voltage seen by GaAs MMIC amplifier input stage. | Use Scenario: Shielding command receiver inputs against electrostatic discharge during spacecraft integration and launch vibration. IC Role / Device Role / Timing Role: Standoff-rated TVS on RS-422 differential pair inputs to absorb ±15 kV contact ESD per IEC61000-4-2 Level 4. Use Value: Category 1 metallurgical bond ensures no parametric drift after 100 krad(Si) total ionizing dose exposure. |
| Avionics Data Bus | Downhole Telemetry Interface |
Use Scenario: Safeguarding ARINC 429 receive inputs from load dump and inductive switching transients in flight control systems. IC Role / Device Role / Timing Role: Unidirectional clamping device on the data line referenced to aircraft chassis ground. Use Value: 150 W PPP rating handles 100 V/10 ms load dump spikes without degradation; –55 °C to +175 °C operation covers full flight envelope. | Use Scenario: Protecting Modbus RTU interface on high-temperature logging tools exposed to 150 °C wellbore environments. IC Role / Device Role / Timing Role: Primary transient suppressor on isolated RS-485 bus lines entering pressure-tight housing. Use Value: Hermetic glass package prevents seal failure at 150 °C and 20,000 psi; 175 °C max TJ enables operation beyond standard commercial limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ17A | Surface-mount DO-214AB package; 6.5 pF capacitance; 21.2 V VC @ 300 A; 1700 W PPP rating | Higher clamping voltage and capacitance; suited for lower-frequency power rails, not RF or high-speed data | Select when board space is constrained and RF performance is not required; requires re-layout due to SMD footprint |
| 1N6375 | Axial-leaded, non-hermetic epoxy package; 15 pF capacitance; 27.5 V VC @ 300 A; 150 W PPP; no Category 1 bond | Lacks radiation hardness and long-term hermetic reliability; rated only to +150 °C TJ | Acceptable for commercial-grade industrial controls where cost is critical and radiation tolerance is unnecessary |
Compared with SMCJ17A and 1N6375, MV1N8158US/TR uniquely combines ultra-low 4 pF capacitance, hermetic reliability, and Category 1 metallurgical bonding - making it the only option qualified for RF front-end and space-grade transient protection where signal fidelity and lifetime assurance are mandatory.
Availability
MV1N8158US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, satellite command link hardening, and avionics data bus safeguarding requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for MV1N8158US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation tolerance, long-life reliability, and extreme-environment operation.
MV1N8158US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetic TVS diodes engineered specifically for mission-critical transient suppression in RF, telemetry, and avionics systems where failure is not an option.
FAQ
What is the clamping voltage of MV1N8158US/TR at its rated peak surge current?
The MV1N8158US/TR has a maximum clamping voltage (VC) of 27.7 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during a transient event. The low VC ensures sensitive downstream components like RF amplifiers or ADC inputs remain within safe operating limits. MV1N8158US/TR maintains this clamping performance across its full –55 °C to +175 °C junction temperature range.
Is MV1N8158US/TR suitable for bidirectional transient protection?
No - MV1N8158US/TR is a unidirectional TVS diode, optimized for clamping positive transients relative to ground. For bidirectional protection, two MV1N8158US/TR devices must be connected in anti-parallel (anode-to-anode), as documented in Microsemi's Figure 5. This configuration doubles the effective capacitance to 8 pF but preserves low-clamp performance in both polarities. MV1N8158US/TR itself does not support symmetrical clamping without external pairing.
What does the "MV" prefix indicate in MV1N8158US/TR?
The "MV" prefix in MV1N8158US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, including enhanced screening, burn-in, and lot traceability for high-reliability applications. It signifies compliance with military specification requirements for temperature cycling, hermeticity, and radiation hardness - distinguishing it from commercial-grade variants like 1N8158US (no prefix) or MQ/MS versions. MV1N8158US/TR is fully traceable and certified for use in space and avionics systems.
Does MV1N8158US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - MV1N8158US/TR provides ESD protection compliant with IEC61000-4-2 Level 4 (±15 kV contact, ±20 kV air) and EFT protection compliant with IEC61000-4-4 (40 A, 5/50 ns). These capabilities are enabled by its low clamping voltage, fast response time (<1 ns), and robust junction design. The device's 4 pF capacitance ensures minimal coupling of ESD energy into protected lines, and its Category 1 metallurgical bond guarantees performance stability after repeated stress events. MV1N8158US/TR is explicitly cited in Microsemi documentation for these standards.
What is the thermal resistance and steady-state power rating of MV1N8158US/TR?
MV1N8158US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W and a steady-state average power rating (PM(AV)) of 1.0 W at TA = 25 °C. This means that under continuous DC bias at VWM (17.0 V), the device can safely dissipate up to 1.0 W without exceeding its maximum junction temperature of +175 °C - assuming adequate PCB copper area or heatsinking. The 150 °C/W RθJA reflects its axial-leaded glass package's inherent thermal limitations, requiring careful layout for sustained power handling. MV1N8158US/TR is not intended for continuous power regulation.
MV1N8158US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 17V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 5.42A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8158US/TR FAQ
1.How can I place an order for MV1N8158US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8158US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8158US/TR reliable?
The price and inventory of MV1N8158US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8158US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8158US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8158US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8158US/TR?
MV1N8158US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8158US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8158US/TR?
For technical support, including MV1N8158US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8158US/TR requirements.
6.How does Aetrix verify that MV1N8158US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8158US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8158US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8158US/TR?
All MV1N8158US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8158US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8158US/TR part is unused and in its original packaging.
Return procedure for MV1N8158US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8158US/TR Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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