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Microchip Technology MV1N8161US/TR
- Part No.:
- MV1N8161US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8161US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,809
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Product details
Overview
MV1N8161US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 22.0 V working standoff voltage (VWM), 37.4 V peak clamping voltage (VC) at 11.7 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for high-reliability ESD/EFT protection in RF and data-line interfaces.
For engineers reviewing the MV1N8161US/TR datasheet, MV1N8161US/TR pinout, MV1N8161US/TR application, or MV1N8161US/TR equivalent, this part delivers low-capacitance transient suppression for high-frequency signal paths where failure tolerance and radiation hardness are critical-especially in aerospace, defense, and telecom infrastructure designs.
Technical Context
The MV1N8161US/TR integrates a series-opposed rectifier diode to achieve ultra-low 4 pF capacitance while maintaining unidirectional TVS functionality. Its hard-glass hermetic package uses Category 1 internal metallurgical bonds for high-reliability operation across –55 °C to +175 °C junction temperature range.
It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity levels. The device is inherently radiation-hardened per MicroNote 050 and nonsensitive to ESD per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22.0 V maximum continuous reverse standoff voltage - defines max DC/peak AC voltage before leakage exceeds 0.5 µA |
| VC @ IPP | 37.4 V clamping voltage at 11.7 A peak impulse current - limits transient-induced overvoltage on protected line |
| CT | 4 pF total capacitance at 0 V - enables use in >1 GHz signal paths without signal integrity degradation |
| PPP | 150 W peak pulse power (10/1000 µs waveform) - sustains high-energy transients without failure |
| TJ Range | –55 °C to +175 °C operating junction temperature - supports extended-range military and downhole applications |
| RθJA | 150 °C/W thermal resistance - requires adequate PCB copper area for sustained 1.0 W average power dissipation |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased during clamping) | Connected to protected line; conducts surge current to ground when V > VWM |
| Cathode | Reference terminal (marked by band) | Connected to system ground or common reference; defines polarity of unidirectional clamping |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated series-opposed rectifier - preserves signal integrity in RF/data lines up to 2.5 GHz |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability aerospace/defense use - ensures long-term interconnect stability under thermal cycling |
| Hermetic glass seal | Voidless construction prevents moisture ingress and parameter drift - eliminates field failures from humidity-induced leakage |
| Radiation hardness | Inherently hardened per MicroNote 050 - suitable for space-qualified systems without additional shielding or derating |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA input stages and antenna switch control lines in S-band radar receivers from ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at connector entry point to clamp transients before reaching sensitive GaAs MMICs. Use Value: 4 pF capacitance avoids detuning of 2.4–3.0 GHz matching networks; 37.4 V clamping prevents gate oxide breakdown in LNAs. | Use Scenario: Safeguarding ARINC 429 receive inputs in flight control computers against induced transients from nearby actuator switching. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data lines to suppress common-mode surges without distorting 100 kbps Manchester-encoded signals. Use Value: 22.0 V VWM aligns with ARINC 429 ±10 V differential swing; –55 °C to +175 °C rating supports wide ambient operation. |
| Military Radio Transceiver I/O | Satellite Telemetry Downlink |
Use Scenario: Shielding HF/VHF transceiver audio and PTT control lines in manpack radios exposed to battlefield ESD and EMP. IC Role / Device Role / Timing Role: Low-leakage (0.5 µA) TVS on analog voice paths to prevent false triggering and noise injection during standby. Use Value: 0.5 µA ID at 22 V ensures no DC loading on bias-sensitive op-amp circuits; RoHS-compliant plating meets DoD directives. | Use Scenario: Protecting S-band telemetry receiver front-end in LEO satellite payloads from single-event transients and launch-induced surges. IC Role / Device Role / Timing Role: Radiation-hardened TVS on downlink IF output lines to maintain bit-error-rate integrity during orbital radiation events. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for redundant protection or margin-based derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ22A | Surface-mount DO-214AB package; 35.1 V VC @ 12.3 A; 100 pF capacitance | Higher capacitance limits use to sub-100 MHz applications; unsuitable for RF front ends | Select only if board space constraints prohibit axial-leaded devices and RF performance is not required |
| 1N6115A | Same axial package; 22.0 V VWM but 43.5 V VC @ 10.3 A; 150 W rating; no radiation hardness documentation | Lacks documented radiation hardness and Category 1 bonding; not qualified for space/military use | Acceptable for commercial industrial use where radiation tolerance is not mandated |
Compared with SMCJ22A and 1N6115A, the MV1N8161US/TR uniquely combines 4 pF capacitance, hermetic reliability, and radiation hardness-making it irreplaceable in RF, avionics, and space-grade transient protection where signal fidelity and mission-critical uptime are non-negotiable.
Availability
MV1N8161US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, and military radio transceiver I/O requiring stable component supply across extended temperature and radiation environments.
Supply support for MV1N8161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal ICs and discrete components.
The MV1N8161US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for mission-critical transient protection in aerospace, defense, and high-frequency communications systems where failure is not an option.
FAQ
What is the clamping voltage of MV1N8161US/TR at its rated peak pulse current?
The MV1N8161US/TR has a maximum clamping voltage (VC) of 37.4 V at 11.7 A peak impulse current (IPP), measured using the standard 10/1000 µs waveform. This value ensures protected circuitry remains below destructive voltage thresholds during transient events. The MV1N8161US/TR maintains this clamping performance across its full operating temperature range of –55 °C to +175 °C.
Is MV1N8161US/TR suitable for bidirectional transient protection?
No, MV1N8161US/TR is a unidirectional TVS diode. For bidirectional protection, two MV1N8161US/TR devices must be connected in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping in both polarities - a verified method used in high-reliability RF and avionics designs.
Does MV1N8161US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MV1N8161US/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 150 W peak pulse power rating and low clamping voltage enable compliance with Level 4 (±8 kV contact, ±15 kV air) ESD and Level 4 (4 kV) EFT requirements when properly implemented with appropriate PCB layout and grounding.
What is the meaning of the "MV" prefix in MV1N8161US/TR?
The "MV" prefix in MV1N8161US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. This distinguishes it from commercial (blank), JAN (MQ), or JANTX (MX) variants, confirming suitability for high-integrity military and aerospace applications where zero-defect operation is mandatory.
Can MV1N8161US/TR be used in surface-mount designs?
No, MV1N8161US/TR is an axial-leaded through-hole device and is not compatible with surface-mount assembly processes. It requires hole mounting and wave or hand soldering. For surface-mount equivalents with similar electrical specs, consider Microsemi's USM-type MELF packages (e.g., 1N8161US), but note those lack the same JANTXV reliability level and hermetic construction as the MV-prefixed axial version.
MV1N8161US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 4.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8161US/TR FAQ
1.How can I place an order for MV1N8161US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8161US/TR reliable?
The price and inventory of MV1N8161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8161US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8161US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8161US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8161US/TR?
MV1N8161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8161US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8161US/TR?
For technical support, including MV1N8161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8161US/TR requirements.
6.How does Aetrix verify that MV1N8161US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8161US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8161US/TR?
All MV1N8161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8161US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8161US/TR part is unused and in its original packaging.
Return procedure for MV1N8161US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8161US/TR Tags
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