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Microchip Technology MV1N8162US/TR
- Part No.:
- MV1N8162US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8162US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
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Inventory:2,187
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Product details
Overview
MV1N8162US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 25 V working standoff voltage (VWM) with 28.5 V minimum breakdown voltage (V(BR)). It is used in aerospace-grade data links and MIL-STD-1553B bus interfaces where ESD immunity and low signal distortion are critical.
For engineers reviewing the MV1N8162US/TR datasheet, MV1N8162US/TR pinout, MV1N8162US/TR application, or MV1N8162US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, 175 °C maximum junction temperature, and compliance with IEC61000-4-2/4-4/4-5 for secondary lightning and EFT protection.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction eliminates internal voids and supports operation from –55 °C to +175 °C.
The device uses tungsten slugs for thermal stability and achieves 150 W peak pulse power at 25 °C with 11.7 A peak impulse current (IPP) and 41.6 V clamping voltage (VC) at rated surge. Its 0.097 %/°C breakdown voltage temperature coefficient ensures stable threshold across temperature extremes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 25 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA. |
| V(BR) min | 28.5 V - Minimum avalanche breakdown voltage at 1 mA test current; defines turn-on threshold under transient stress. |
| VC @ IPP | 41.6 V - Clamping voltage at 11.7 A peak impulse current; determines maximum voltage seen by protected circuitry. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use on >1 GHz RF lines and high-speed digital buses without signal integrity loss. |
| PPP | 150 W - Peak pulse power rating at 10/1000 µs waveform; supports MIL-STD-1275B automotive surge and IEC61000-4-5 Level 3 transients. |
| TJ max | +175 °C - Maximum junction temperature; allows deployment in engine control units and avionics bays without derating. |
| RθJA | 150 °C/W - Junction-to-ambient thermal resistance; requires minimal PCB copper area for steady-state 1.0 W dissipation. |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during reverse-transient clamping when cathode is biased positive relative to anode. |
| Cathode | Clamping reference node | Connected to system ground or common return; establishes polarity-sensitive clamping action and defines VWM directionality. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in vacuum or humid environments. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/507 requirements for space-grade reliability; validated for >100,000 thermal cycles. |
| Low 4 pF capacitance | Preserves signal rise time on 100 Mbps+ serial links (e.g., RS-485, CAN FD, MIL-STD-1553B) without added jitter or reflection. |
| Triple-layer passivation | Prevents surface leakage and parametric drift under ionizing radiation (100 krad(Si) TID tolerance per MicroNote 050). |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±15 kV contact ESD, 4 kV EFT bursts, and 2 kV line-to-line surge per Level 3 of IEC61000-4-5. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553B Interface |
|---|---|
Use Scenario: Protecting bidirectional command/data lines in flight control computers against induced lightning transients and ESD during maintenance. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each stub line between transformer-coupled transceivers and bus controllers. Use Value: 4 pF capacitance prevents signal distortion on 1 Mbps Manchester-encoded bus; 41.6 V clamping ensures receiver input stays within absolute maximum ratings. |
Use Scenario: Shielding remote terminal unit (RTU) interface ICs from coupling-induced surges on long-haul aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted directly at connector entry point, referenced to chassis ground. Use Value: 25 V VWM matches 1553B common-mode range; 150 W PPP withstands 500 A/m magnetic field coupling events per DO-160 Section 22. |
| Avionics Power Input Filtering | High-Reliability RS-485 Nodes |
Use Scenario: Secondary surge suppression on 28 V DC power inputs to mission-critical sensors in UAV navigation systems. IC Role / Device Role / Timing Role: First-stage clamping device upstream of DC/DC converters and LDO regulators. Use Value: 175 °C TJ max enables operation near hot engine bays; hermetic seal prevents corrosion failure in salt fog environments. |
Use Scenario: Protecting differential pair receivers in ground station telemetry links exposed to lightning-induced ground potential rise. IC Role / Device Role / Timing Role: Paired unidirectional TVS devices on A and B lines, with cathodes tied to local ground plane. Use Value: 11.7 A IPP handles 4 kV/2 Ω IEC61000-4-5 ring wave; 4 pF avoids skew between differential signals at 10 Mbps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ24A | Surface-mount SMC package; 24 V VWM; 38.9 V VC @ 12.1 A; 6.5 pF capacitance; 1500 W PPP rating. | Higher power handling but larger capacitance limits use on >500 Mbps links; not hermetically sealed. | Select when board space is constrained and higher surge energy must be absorbed, but radiation hardness and long-term hermeticity are not required. |
| 1N6377 | Axial-leaded glass package; 24 V VWM; 38.9 V VC @ 12.1 A; 10 pF capacitance; 150 W PPP; non-hermetic construction. | Lacks Category 1 bond and voidless seal; rated only to +150 °C junction temperature. | Choose for commercial-grade industrial controls where cost is prioritized over 20-year field life or space qualification. |
Compared with SMCJ24A and 1N6377, MV1N8162US/TR provides superior high-frequency signal integrity due to its 4 pF capacitance, guaranteed hermetic reliability for aerospace deployments, and extended +175 °C operation-making it the only option qualified for JANTXV-level programs requiring MIL-PRF-19500 compliance.
Availability
MV1N8162US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553B interface hardening, and avionics power input filtering requiring stable component supply across extended product lifecycles.
Supply support for MV1N8162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
MV1N8162US/TR belongs to Microsemi's legacy 1N81xx family of hermetic TVS diodes, engineered specifically for mission-critical transient protection in environments where failure is not an option-including satellite payloads, fighter jet avionics, and nuclear instrumentation systems.
FAQ
What is the clamping voltage of MV1N8162US/TR at its rated peak impulse current?
The MV1N8162US/TR has a maximum clamping voltage (VC) of 41.6 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs double-exponential surge waveform. This value ensures protected downstream circuitry remains within safe operating limits during transient events. The MV1N8162US/TR maintains this clamping performance across its full operating temperature range of –55 °C to +175 °C.
Does MV1N8162US/TR meet MIL-STD-750 ESD sensitivity requirements?
Yes, MV1N8162US/TR is nonsensitive to ESD per MIL-STD-750 Method 1020, meaning it withstands human-body-model discharges without parameter shift or functional degradation. This immunity is enabled by its triple-layer passivation and hermetic glass encapsulation. The MV1N8162US/TR also complies with IEC61000-4-2 Level 4 (±15 kV contact discharge) for system-level ESD robustness.
Is MV1N8162US/TR suitable for bidirectional transient protection?
No, MV1N8162US/TR is a unidirectional TVS. For bidirectional protection, two MV1N8162US/TR devices must be connected in anti-parallel configuration, as shown in Figure 5 of the original datasheet. This arrangement doubles the effective capacitance to 8 pF but preserves low-clamp performance in both polarities-commonly used on AC-coupled MIL-STD-1553B data lines.
What does the "MV" prefix indicate in MV1N8162US/TR?
The "MV" prefix in MV1N8162US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, including enhanced screening, burn-in, and lot acceptance testing. It signifies that the MV1N8162US/TR meets stringent military specifications for temperature cycling, vibration, and long-term parametric stability-distinct from commercial (blank), JAN (MQ), or JANTX (MX) variants.
Can MV1N8162US/TR be used in RoHS-compliant designs?
Yes, MV1N8162US/TR is RoHS compliant (e3 marking), featuring matte tin plating over copper leads and lead-free glass encapsulation. Its construction contains no intentionally added lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE. The MV1N8162US/TR satisfies EU Directive 2011/65/EU and is compatible with lead-free reflow soldering profiles up to 260 °C for 10 seconds.
MV1N8162US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 3.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8162US/TR FAQ
1.How can I place an order for MV1N8162US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8162US/TR reliable?
The price and inventory of MV1N8162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8162US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8162US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8162US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8162US/TR?
MV1N8162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8162US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8162US/TR?
For technical support, including MV1N8162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8162US/TR requirements.
6.How does Aetrix verify that MV1N8162US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8162US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8162US/TR?
All MV1N8162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8162US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8162US/TR part is unused and in its original packaging.
Return procedure for MV1N8162US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8162US/TR Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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