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Microchip Technology MV1N8164US/TR
- Part No.:
- MV1N8164US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8164US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,380
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Product details
Overview
MV1N8164US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 34.2 V minimum breakdown voltage (V(BR)), 30.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and aerospace data links.
For engineers reviewing the MV1N8164US/TR datasheet, MV1N8164US/TR pinout, MV1N8164US/TR application, or MV1N8164US/TR equivalent, key selection criteria include clamping voltage (49.9 V at 3.01 A), low-leakage standby current (0.5 µA max), Category 1 metallurgical bond reliability, and axial-leaded hard-glass package compatibility with MIL-STD-750 ESD testing.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its voidless hermetic glass construction ensures stable performance across -55°C to +175°C junction temperature range.
The device operates as a unidirectional clamp with cathode-band polarity, rated for 300 A peak impulse current (IPP) and 49.9 V clamping voltage (VC) under 10/1000 µs waveform. It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards without derating up to 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30.0 V maximum continuous reverse standoff voltage - defines safe operating DC bias before conduction begins |
| V(BR) min | 34.2 V minimum breakdown voltage at 1 mA - ensures predictable avalanche initiation threshold |
| VC @ IPP | 49.9 V clamping voltage at 3.01 A peak current - limits transient overvoltage seen by protected ICs |
| CT | 4 pF total capacitance at 0 V - preserves signal integrity in >1 GHz RF paths and high-speed serial links |
| PPP | 150 W peak pulse power at 10/1000 µs - sustains single-event surges without degradation |
| ID max | 0.5 µA maximum standby leakage at VWM - avoids loading of high-impedance sensor or reference circuits |
| TJ range | -55°C to +175°C operational junction temperature - supports deployment in avionics and downhole electronics |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink during forward conduction | Connected to protected line; conducts surge energy to ground when clamped |
| Cathode | Reference terminal with polarity band | Connected to system ground; defines unidirectional clamping direction (cathode-to-anode) |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-PRF-19500 for space-grade reliability and radiation hardness |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term parametric drift |
| Voidless hermetic seal | Eliminates internal moisture ingress and pressure-induced failure modes in thermal cycling |
| Nonsensitive to ESD | Qualified to MIL-STD-750 Method 1020 - withstands handling without preconditioning or screening |
| Low-temperature coefficient | 0.099 %/°C αV(BR) - ensures stable breakdown voltage across wide operating temperature range |
Applications
| Avionics Data Bus Protection | Satellite Telemetry Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients and ESD events. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each data line upstream of receiver input, referenced to chassis ground. Use Value: 4 pF capacitance prevents signal rise-time degradation; 49.9 V clamping ensures receiver input stays within absolute maximum ratings. | Use Scenario: Shielding S-band telemetry receiver inputs against launch-stage ESD and solar particle event-induced surges. IC Role / Device Role / Timing Role: Primary transient clamp on RF-coupled analog baseband lines prior to ADC sampling stage. Use Value: -55°C to +175°C operation enables use in unheated payload bays; Category 1 bond guarantees mission-critical reliability. |
| Downhole Oilfield Sensor Interface | High-Frequency Test Equipment Input |
Use Scenario: Safeguarding pressure/temperature sensor outputs in borehole tools exposed to switching transients from motor drives. IC Role / Device Role / Timing Role: Clamp on 4–20 mA loop output lines, mounted directly at sensor housing feedthrough. Use Value: 300 A IPP rating handles high-energy cable reflections; hermetic seal prevents hydrocarbon vapor ingress at 200°C ambient. | Use Scenario: Protecting 12 Gbps oscilloscope or bit-error-rate tester (BERT) input channels from accidental probe discharge. IC Role / Device Role / Timing Role: Low-capacitance TVS integrated into SMA connector PCB footprint to minimize stub effects. Use Value: 4 pF CT preserves signal fidelity up to 15 GHz; 0.5 µA ID avoids DC offset errors in precision measurement paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ33A | Surface-mount DO-214AB package; 33 V VWM; 55 V VC @ 5.5 A; 22 pF CT | Higher capacitance limits use to sub-500 MHz applications; no Category 1 qualification | Preferred for cost-sensitive industrial PCBs where space constraints prohibit axial leads |
| 1N6377 | Axial DO-41; 33 V VWM; 53.3 V VC @ 2.8 A; 10 pF CT; commercial-grade only | Lacks hermetic seal, triple-layer passivation, and radiation hardness; not rated for >125°C | Acceptable for terrestrial telecom infrastructure with lower reliability requirements |
Compared with SMCJ33A and 1N6377, MV1N8164US/TR provides superior high-frequency performance (4 pF vs ≥10 pF), extended temperature capability (-55°C to +175°C), and space-qualified reliability - making it the only option for radiation-hardened, high-baud-rate, or extreme-environment deployments.
Availability
MV1N8164US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite telemetry front-end design, and downhole oilfield sensor interface applications requiring stable component supply and full traceability.
Supply support for MV1N8164US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The MV1N8164US/TR belongs to Microsemi's 1N81xx family of hermetically sealed TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option - including launch systems, orbital platforms, and deep-earth exploration equipment.
FAQ
What is the clamping voltage of MV1N8164US/TR under standard 10/1000 µs surge conditions?
The MV1N8164US/TR has a maximum clamping voltage (VC) of 49.9 V at 3.01 A peak impulse current (IPP) under the standardized 10/1000 µs waveform. This value is measured per IEC61000-4-5 test conditions and ensures downstream circuitry remains within safe operating limits during transient events. The MV1N8164US/TR maintains this clamping performance across its full rated temperature range.
Is MV1N8164US/TR suitable for bidirectional transient protection?
No, MV1N8164US/TR is a unidirectional TVS diode with cathode-band polarity. For bidirectional protection, two MV1N8164US/TR devices must be connected in anti-parallel configuration - which doubles total capacitance to 8 pF. The datasheet explicitly states this arrangement in Figure 5 and confirms it yields symmetrical clamping in both directions while retaining low-capacitance benefits.
Does MV1N8164US/TR meet RoHS compliance requirements?
Yes, MV1N8164US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. Its axial leads feature matte tin plating over copper, satisfying EU Directive 2011/65/EU. The device also complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for through-hole assembly processes.
What is the maximum steady-state power dissipation for MV1N8164US/TR at 25°C ambient?
The MV1N8164US/TR has a maximum steady-state (average) power rating of 1.0 W at TA = 25°C, based on thermal resistance junction-to-ambient (RθJA) of 150°C/W. This rating assumes adequate PCB copper area and thermal vias to maintain junction temperature below 175°C. Derating is required above 25°C ambient, per the published derating curve in Figure 3 of the datasheet.
How does the "MV" prefix in MV1N8164US/TR indicate its reliability grade?
The "MV" prefix in MV1N8164US/TR denotes JANTXV-level reliability per MIL-PRF-19500, qualifying it for high-reliability military and space applications. This includes enhanced screening, burn-in, and lot acceptance testing beyond commercial-grade equivalents. The "MV" grade mandates Category 1 internal metallurgical bonds and voidless hermetic sealing - both confirmed in the official Microsemi T4-LDS-xxxx datasheet for MV1N8164US/TR.
MV1N8164US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 3.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8164US/TR FAQ
1.How can I place an order for MV1N8164US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8164US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8164US/TR reliable?
The price and inventory of MV1N8164US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8164US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8164US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8164US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8164US/TR?
MV1N8164US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8164US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8164US/TR?
For technical support, including MV1N8164US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8164US/TR requirements.
6.How does Aetrix verify that MV1N8164US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8164US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8164US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8164US/TR?
All MV1N8164US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8164US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8164US/TR part is unused and in its original packaging.
Return procedure for MV1N8164US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8164US/TR Tags
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