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Microchip Technology MV1N8167US/TR
- Part No.:
- MV1N8167US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8167US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,334
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Product details
Overview
MV1N8167US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 40.0 V working standoff voltage (VWM) with 64.6 V maximum clamping voltage (VC) at 300 A IPP.
For engineers reviewing the MV1N8167US/TR datasheet, MV1N8167US/TR pinout, MV1N8167US/TR application, or MV1N8167US/TR equivalent, key selection criteria include low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, Category 1 metallurgical bond reliability, and axial-leaded through-hole mounting compatibility in hard-glass construction.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF total capacitance-critical for preserving signal integrity in RF, datacom, and high-baud-rate interfaces. Its hermetically sealed voidless glass package ensures stable electrical performance across -55°C to +175°C junction temperature range.
The device operates as a unidirectional clamp with 40.0 V VWM and 64.6 V VC at 300 A, supporting secondary lightning protection per IEC61000-4-5. It exhibits 0.101 %/°C breakdown voltage temperature coefficient and maintains <0.5 µA standby current at rated standoff voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40.0 V - Maximum continuous reverse operating voltage before clamping begins; sets upper limit for protected line DC bias. |
| VC @ IPP=300 A | 64.6 V - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream circuitry. |
| PPP | 150 W - Peak pulse power handling at 25°C; determines survivability against standardized lightning-induced transients. |
| CT | 4 pF - Total small-signal capacitance; enables use on >1 GHz RF paths and high-speed serial links without signal degradation. |
| TJ Range | -55°C to +175°C - Full operational junction temperature range; supports aerospace, downhole, and military environments. |
| αV(BR) | 0.101 %/°C - Temperature coefficient of breakdown voltage; enables accurate thermal derating in wide-temperature designs. |
| ID @ VWM | <0.5 µA - Standby leakage current at rated standoff; minimizes power loss and avoids false triggering in high-impedance circuits. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink terminal under reverse bias | Connected to protected line; conducts surge current toward ground when Vline exceeds VWM. |
| Cathode | Reference terminal (marked with band) | Typically tied to system ground or low-impedance return path; establishes polarity-sensitive clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration-ensures long-term parameter stability in harsh environments. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space-grade and defense systems. |
| Triple-layer passivation | Enhances surface insulation resistance and prevents leakage path formation under humidity or contamination stress. |
| Low 4 pF capacitance | Preserves signal rise time and impedance matching on RF antennas, Ethernet PHYs, and USB 3.x lines. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air/±8 kV contact) and EFT (40 A, 5/50 ns) immunity without external filtering components. |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and LNAs from induced transients during lightning proximity events. IC Role / Device Role / Timing Role: Unidirectional voltage clamp placed between antenna port and receiver input. Use Value: 4 pF capacitance avoids detuning of 1–2 GHz matching networks; 64.6 V clamping prevents LNA saturation or gate oxide damage. |
Use Scenario: Safeguarding ARINC 429 receive inputs against ESD and coupling noise in cockpit display units. IC Role / Device Role / Timing Role: Point-of-entry transient suppressor on differential data line before receiver buffer. Use Value: Sub-µA leakage preserves bus termination integrity; hermetic seal withstands 10,000+ hour MTBF requirements. |
| Downhole Telemetry Systems | Military Radio Transceiver I/O |
Use Scenario: Shielding RS-485 telemetry links in oil/gas wellhead controllers exposed to high-temperature, high-vibration conditions. IC Role / Device Role / Timing Role: Primary surge protection on bidirectional half-duplex communication lines. Use Value: -55°C to +175°C operation eliminates derating concerns; Category 1 bond resists mechanical shock-induced failure. |
Use Scenario: Hardening HF/VHF radio front-panel controls and audio jacks against battlefield ESD and EMP coupling. IC Role / Device Role / Timing Role: First-stage clamp on all user-accessible analog/digital I/O ports. Use Value: 150 W PPP rating handles MIL-STD-461 CS114 conducted surges; RoHS-compliant plating meets DoD sourcing mandates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ40A | Surface-mount DO-214AB package; 69.4 V VC @ 300 A; 170 W PPP; 100 pF capacitance. | Higher capacitance limits use to sub-100 MHz signals; SMT footprint requires PCB redesign. | Select when board space is constrained and RF performance is not critical. |
| 1N6330 | Axial-leaded, 40 V VWM, 64.5 V VC @ 300 A, but uses epoxy package; no Category 1 bond; 10 pF capacitance. | Lacks hermetic seal and metallurgical qualification; unsuitable for extended-life aerospace deployments. | Select for cost-sensitive industrial control where full MIL-spec reliability is not required. |
Compared with SMCJ40A and 1N6330, MV1N8167US/TR uniquely combines axial-leaded through-hole compatibility, 4 pF capacitance, and Category 1 hermetic reliability-making it the only option for high-frequency, mission-critical analog signal protection where zero parameter drift over 20+ years is mandatory.
Availability
MV1N8167US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, and downhole telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for MV1N8167US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened devices, and precision timing solutions.
MV1N8167US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes-engineered specifically for defense, aerospace, and oilfield applications demanding zero-failure transient protection under extreme thermal, mechanical, and radiation stress.
FAQ
What is the clamping voltage of MV1N8167US/TR at its rated peak surge current?
The MV1N8167US/TR has a maximum clamping voltage (VC) of 64.6 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform. This value is measured at 25°C ambient and defines the upper voltage limit imposed on protected circuitry during standardized surge events. The MV1N8167US/TR maintains this clamping performance across its full -55°C to +175°C operating junction temperature range, with minimal derating up to 125°C.
Is MV1N8167US/TR suitable for bidirectional transient protection?
No-MV1N8167US/TR is a unidirectional TVS diode. For bidirectional protection, two MV1N8167US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the original Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same 40.0 V standoff and 64.6 V clamping capability in both polarities.
Does MV1N8167US/TR meet RoHS requirements?
Yes-MV1N8167US/TR is an RoHS-compliant variant, indicated by the "e3" suffix in its full nomenclature. Its axial leads feature matte tin plating over copper, satisfying EU Directive 2011/65/EU and subsequent amendments. The hermetic glass package contains no lead-based solder or hazardous substances above threshold limits.
What is the thermal resistance of MV1N8167US/TR, and how does it affect power dissipation?
The MV1N8167US/TR has a thermal resistance from junction to ambient (RθJA) of 150°C/W. At 25°C ambient, its steady-state average power rating is 1.0 W. This means sustained power dissipation above 1.0 W will cause junction temperature to exceed safe limits unless heatsinking or forced-air cooling is applied. The 150 W peak pulse rating applies only to short-duration transients (≤1000 µs), not continuous operation.
How does the "MV" prefix in MV1N8167US/TR relate to reliability grading?
The "MV" prefix denotes JANTXV-level reliability qualification per MIL-PRF-19500, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. MV-grade parts like MV1N8167US/TR are certified for high-reliability applications such as spaceflight, airborne radar, and nuclear instrumentation-where failure modes must be statistically bounded to less than 100 FIT (failures in time).
MV1N8167US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.6V
- Current - Peak Pulse (10/1000µs):
- 2.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8167US/TR FAQ
1.How can I place an order for MV1N8167US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8167US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8167US/TR reliable?
The price and inventory of MV1N8167US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8167US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8167US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8167US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8167US/TR?
MV1N8167US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8167US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8167US/TR?
For technical support, including MV1N8167US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8167US/TR requirements.
6.How does Aetrix verify that MV1N8167US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8167US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8167US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8167US/TR?
All MV1N8167US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8167US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8167US/TR part is unused and in its original packaging.
Return procedure for MV1N8167US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8167US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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