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Microchip Technology MV1N8170US/TR
- Part No.:
- MV1N8170US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8170US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,041
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Product details
Overview
MV1N8170US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 53.0 V working standoff voltage (VWM), 77.0 V maximum clamping voltage (VC) at 11.7 A IPP, and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF, datacom, and avionics interfaces.
For engineers reviewing the MV1N8170US/TR datasheet, MV1N8170US/TR pinout, MV1N8170US/TR application, or MV1N8170US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, IEC61000-4-2/4-4 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated device. Its hard-glass, voidless hermetic construction ensures stable performance across -55 °C to +175 °C junction temperature range.
The device operates as a unidirectional clamp with 53.0 V working standoff voltage and 77.0 V clamping voltage at 11.7 A peak impulse current. It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity requirements without derating up to 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 µs) | 150 W - sustains high-energy transients without failure in telecom/data line protection |
| Working Standoff Voltage (VWM) | 53.0 V - maximum continuous reverse voltage before conduction begins |
| Clamping Voltage (VC @ IPP) | 77.0 V at 11.7 A - limits downstream voltage during surge to safe levels |
| Total Capacitance (CT) | 4 pF - preserves signal integrity in >1 GHz RF and high-speed serial links |
| Junction Temperature Range | -55 °C to +175 °C - supports operation in aerospace, downhole, and military environments |
| Surge Current (IPP) | 11.7 A - handles IEC61000-4-5 Level 3 surges with margin |
| Leakage Current (ID @ VWM) | 0.5 µA - negligible standby power loss in battery-powered systems |
Pinout & Package
Package: Axial-leaded, hermetically sealed voidless hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased during clamp) | Connected to protected line; conducts surge current to ground when V > VWM |
| Cathode | Reference terminal (marked with band) | Connected to system ground or common reference; defines polarity of unidirectional clamping |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications per MIL-PRF-19500 |
| Triple-layer passivation | Enhanced surface stability and moisture resistance in harsh environmental exposure |
| Voidless hermetic seal | Eliminates internal delamination risk under thermal cycling and mechanical shock |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands handling without pre-failure; no special ESD controls required during assembly |
| Radiation-hardened design | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 |
Applications
| Avionics Data Bus Protection | RF Front-End Surge Suppression |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients and coupling events in airborne electronics. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between data line and chassis ground to limit voltage excursion during fast-rising surges. Use Value: 4 pF capacitance prevents signal distortion on 1 Mbps+ buses; 77.0 V clamping ensures receiver ICs remain within absolute maximum ratings. | Use Scenario: Shielding LNA inputs and mixer outputs in S-band radar receivers from ESD and antenna-coupled transients. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted directly at RF connector interface to minimize stub inductance. Use Value: 4 pF CT preserves impedance match and noise figure; hermetic glass package maintains RF performance stability over temperature and lifetime. |
| Downhole Telemetry Interface | Military Vehicle CAN FD Transceivers |
Use Scenario: Safeguarding RS-485 telemetry links in oil/gas wellhead controllers exposed to high-temperature, high-vibration, and ESD-prone environments. IC Role / Device Role / Timing Role: Primary transient protector on differential pair, placed before isolation barrier and line driver. Use Value: -55 °C to +175 °C operating range matches downhole thermal profile; Category 1 bond ensures reliability over 20+ year service life. | Use Scenario: Secondary-level surge protection for CAN FD physical layer in armored vehicle ECUs subjected to ISO 7637-2 and IEC61000-4-5 pulses. IC Role / Device Role / Timing Role: Unidirectional clamp on CAN_H/CAN_L lines referenced to chassis ground, upstream of transceiver. Use Value: 150 W PPP rating absorbs repetitive load-dump energy; 0.5 µA leakage avoids bus bias shift in low-power sleep modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ53A-E3/57T | Surface-mount DO-214AB package; 53 V VWM; 87.1 V VC @ 10.3 A; 170 W PPP; 15 pF CT | Higher capacitance limits use in >500 MHz circuits; not hermetically sealed | Preferred for cost-sensitive, space-constrained PCBs where RF performance is secondary |
| 1N8170US/TR (same part, non-JANTXV) | No MV prefix; commercial-grade reliability level; same electrical specs and package | Lacks Category 1 bond qualification and extended temp screening | Acceptable for industrial applications where full JANTXV qualification is not mandated |
Compared with SMCJ53A-E3/57T and 1N8170US/TR, the MV1N8170US/TR provides superior high-frequency immunity due to its 4 pF capacitance and enables mission-critical deployment via hermetic sealing and Category 1 metallurgical bonding - critical for aerospace, defense, and downhole systems.
Availability
MV1N8170US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, RF front-end surge suppression, and downhole telemetry interfaces requiring stable component supply, long-term obsolescence management, and traceable high-reliability sourcing.
Supply support for MV1N8170US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The MV1N8170US/TR belongs to Microsemi's 1N8149–1N8182 family of hermetic TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option - including satellite payloads, fighter jet avionics, and nuclear instrumentation.
FAQ
What is the clamping voltage of MV1N8170US/TR at its rated peak impulse current?
The MV1N8170US/TR has a maximum clamping voltage (VC) of 77.0 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures protected circuitry remains within safe operating limits during surge events, and is verified per Microsemi T4-LDS-xxxx test conditions at 25 °C ambient.
Is MV1N8170US/TR suitable for bidirectional transient protection?
The MV1N8170US/TR is inherently unidirectional. For bidirectional protection, two MV1N8170US/TR devices must be connected in anti-parallel - as documented in Figure 5 of the Microsemi datasheet. This configuration doubles total capacitance to 8 pF but retains full 150 W surge capability per polarity.
Does MV1N8170US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the MV1N8170US/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance and low leakage enable robust performance in both test regimes without external filtering, as confirmed in Microsemi's application guidance and characterization data.
What does the "MV" prefix signify in MV1N8170US/TR?
The "MV" prefix in MV1N8170US/TR indicates JANTXV-level reliability qualification per MIL-PRF-19500, including extended temperature screening (-55 °C to +175 °C), hermeticity verification, and Category 1 internal metallurgical bond certification - distinguishing it from commercial (blank), JAN (MQ), or JANTX (MX) variants of the same base device.
Can MV1N8170US/TR be used in surface-mount designs?
No - MV1N8170US/TR is an axial-leaded through-hole device in a hermetic hard-glass package. It is not compatible with reflow soldering or pick-and-place automation. For surface-mount equivalents, consider Microsemi's US-style MELF variants (e.g., 1N8170US) or alternative SMCJ-series packages, though those lack hermetic sealing and Category 1 bonding.
MV1N8170US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 53V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 1.76A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8170US/TR FAQ
1.How can I place an order for MV1N8170US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8170US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8170US/TR reliable?
The price and inventory of MV1N8170US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8170US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8170US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8170US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8170US/TR?
MV1N8170US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8170US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8170US/TR?
For technical support, including MV1N8170US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8170US/TR requirements.
6.How does Aetrix verify that MV1N8170US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8170US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8170US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8170US/TR?
All MV1N8170US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8170US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8170US/TR part is unused and in its original packaging.
Return procedure for MV1N8170US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8170US/TR Tags
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