My Inquiry
My Account
Microchip Technology MV1N8171US/TR
- Part No.:
- MV1N8171US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8171US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,025
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MV1N8171US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 64.6 V minimum breakdown voltage (V(BR)), 58.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data comms, and aerospace avionics interfaces.
For engineers reviewing the MV1N8171US/TR datasheet, MV1N8171US/TR pinout, MV1N8171US/TR application, or MV1N8171US/TR equivalent, key selection criteria include its Category 1 metallurgical bond reliability, low-clamping 93.7 V (VC) at 300 A IPP, RoHS-compliant MELF "A" package, and IEC61000-4-2/4-4/4-5 compliance for secondary lightning and surge immunity in mission-critical systems.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - critical for preserving signal integrity above 1 GHz. Its hard-glass hermetic seal and tungsten slug construction ensure stable operation from –55 °C to +175 °C with no voids or moisture ingress.
The device operates as a unidirectional clamping element with 58.0 V VWM and 93.7 V VC at 300 A IPP (10/1000 µs), delivering robust secondary surge protection where failure is not tolerable - including MIL-STD-750 ESD-insensitive design and inherent radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets operating margin for protected signal lines. |
| V(BR) min | 64.6 V - Minimum avalanche breakdown voltage at 1 mA; guarantees consistent clamping onset across temperature and lot. |
| VC @ IPP | 93.7 V at 300 A - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to safe levels in telecom and radar interfaces. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use in >1 GHz RF paths without impedance mismatch or bandwidth loss. |
| PPP | 150 W - Peak pulse power rating at 25 °C; supports repeated surge events in industrial control and avionics bus protection. |
| RθJA | 150 °C/W - Junction-to-ambient thermal resistance; informs PCB copper area requirements for sustained power dissipation. |
| TJ range | –55 to +175 °C - Full operational junction temperature range; validated for space-grade and downhole applications. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass MELF "A" package with axial leads, tin/lead or RoHS-compliant matte tin plating over copper, cathode band marking, and ~340 mg weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input side of unidirectional clamping path | Connected to protected line; conducts only during forward-biased transients (e.g., reverse polarity faults). |
| Cathode | Clamping output node | Connected to ground or reference rail; sinks surge current when VAK ≥ V(BR); marked by band on glass body. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal tungsten-slug bond qualified for high-reliability aerospace and defense applications per MIL-PRF-19500. |
| Triple-layer passivation | Hermetic glass encapsulation with three dielectric layers prevents moisture-induced parametric drift and corrosion. |
| Low-capacitance architecture | Series rectifier + TVS topology achieves 4 pF - lowest among 150 W-rated TVS devices, preserving RF signal fidelity. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-line lightning surges in secondary protection roles. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050; suitable for low-earth orbit and nuclear instrumentation environments. |
Applications
| RF Transceiver Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band (1–2 GHz) antenna feedlines and LNAs from ESD and nearby lightning-induced transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between antenna port and LNA input. Use Value: 4 pF capacitance avoids detuning matching networks; 93.7 V clamping prevents LNA gate oxide rupture under 300 A surges. |
Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B receiver inputs against induced surges on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data lines, referenced to chassis ground. Use Value: 58.0 V VWM accommodates 27 V aircraft supply transients; Category 1 bond ensures zero failure in 20-year service life. |
| High-Speed Serial Link ESD Guard | Downhole Oilfield Sensor Interface |
Use Scenario: ESD protection on USB 3.0 or PCIe Gen3 lanes in ruggedized test equipment exposed to field handling. IC Role / Device Role / Timing Role: Low-C TVS on each signal pair, placed immediately before connector. Use Value: 4 pF capacitance maintains >5 Gbps eye diagram integrity; ±8 kV IEC61000-4-2 compliance meets industrial ESD standards. |
Use Scenario: Transient suppression on pressure/temperature sensor outputs in oil/gas wellhead electronics operating at 175 °C ambient. IC Role / Device Role / Timing Role: Primary surge clamp on analog output lines feeding 4–20 mA transmitters. Use Value: –55 to +175 °C operation eliminates derating; hermetic seal prevents hydrogen embrittlement in H₂S-rich environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A | Surface-mount SMB package; 58 V VWM; 93.6 V VC @ 30.2 A (not 300 A); 65 pF capacitance. | Limited to lower-energy surges; unsuitable for RF or high-IPP (>100 A) applications due to higher C and lower PPP. | Select only for cost-sensitive commercial designs where 4 pF and 300 A IPP are not required. |
| 1N6377 | Axial-leaded DO-41; 58 V VWM; 93.6 V VC @ 30.2 A; 65 pF; no Category 1 bond or radiation hardness. | Commercial-grade reliability; lacks hermetic seal, triple passivation, and MIL-STD-750 ESD immunity. | Acceptable for non-mission-critical industrial controls but not for aerospace, defense, or downhole use. |
Compared with SMBJ58A and 1N6377, MV1N8171US/TR uniquely combines 300 A surge capability, 4 pF capacitance, Category 1 metallurgical bonding, and full radiation tolerance - making it the sole choice for high-frequency, high-reliability transient protection where parameter margins and long-term stability are non-negotiable.
Availability
MV1N8171US/TR is available at Aetrix Electronics and suitable for RF transceiver front-ends, avionics data buses, and downhole sensor interfaces requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.
Supply support for MV1N8171US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
MV1N8171US/TR belongs to Microsemi's 1N8149–1N8182 family of hermetically sealed TVS diodes engineered specifically for mission-critical transient protection in extreme environments - including space, aviation, and energy exploration.
FAQ
What is the clamping voltage of MV1N8171US/TR at its rated surge current?
The MV1N8171US/TR has a maximum clamping voltage (VC) of 93.7 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings. The MV1N8171US/TR maintains this clamping performance across its full operating temperature range.
Is MV1N8171US/TR RoHS compliant?
Yes, MV1N8171US/TR is RoHS compliant, as indicated by the "e3" suffix in its nomenclature per Microsemi's part numbering system. The device uses matte tin plating over copper leads and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE substances above threshold limits. Compliance is verified per JEDEC J-STD-609 and applies to both commercial and high-reliability variants of the MV1N8171US/TR.
Does MV1N8171US/TR support bidirectional transient protection?
No, MV1N8171US/TR is a unidirectional TVS. For bidirectional protection, two MV1N8171US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping for AC-coupled or differential signal lines - a deliberate trade-off to retain low capacitance while extending protection coverage.
What is the thermal resistance of MV1N8171US/TR, and how does it affect PCB layout?
MV1N8171US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W. This value assumes standard PCB mounting with minimal copper; designers must allocate adequate copper pour area around the MELF "A" package to avoid exceeding the 175 °C maximum junction temperature during repetitive 150 W pulses. For high-duty-cycle applications, thermal vias and internal ground planes are recommended to reduce effective RθJA below 100 °C/W.
How is the reliability level indicated in the MV1N8171US/TR part number?
The "MV" prefix in MV1N8171US/TR denotes JANTXV-level reliability per MIL-PRF-19500, qualifying the device for military and space applications with enhanced screening, burn-in, and lot traceability. This distinguishes it from commercial (blank prefix), JAN (MQ), or JANTX (MX) variants. The "US" suffix indicates the MELF "A" surface-mount package, and "/TR" specifies tape-and-reel packaging per EIA-296 standards.
MV1N8171US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 93.7V
- Current - Peak Pulse (10/1000µs):
- 1.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8171US/TR FAQ
1.How can I place an order for MV1N8171US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8171US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8171US/TR reliable?
The price and inventory of MV1N8171US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8171US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8171US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8171US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8171US/TR?
MV1N8171US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8171US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8171US/TR?
For technical support, including MV1N8171US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8171US/TR requirements.
6.How does Aetrix verify that MV1N8171US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8171US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8171US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8171US/TR?
All MV1N8171US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8171US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8171US/TR part is unused and in its original packaging.
Return procedure for MV1N8171US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8171US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
