My Inquiry
My Account
Microchip Technology MV1N8172US/TR
- Part No.:
- MV1N8172US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8172US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,835
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MV1N8172US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 64.0 V working standoff voltage (VWM) with 103.0 V clamping voltage (VC) at 300 A surge current - ideal for ESD/EFT protection in aerospace and military communication interfaces.
For engineers reviewing the MV1N8172US/TR datasheet, MV1N8172US/TR pinout, MV1N8172US/TR application, or MV1N8172US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical systems.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device uses internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and long-term stability under thermal cycling. It is rated for 150 W peak pulse power (10/1000 µs), 1.0 W steady-state dissipation, and exhibits <0.105 %/°C breakdown voltage temperature coefficient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 64.0 V - Maximum continuous reverse-biased operating voltage before conduction begins; sets safe signal swing margin for protected lines. |
| VC @ IPP=300 A | 103.0 V - Clamped voltage during 10/1000 µs surge; defines maximum stress imposed on downstream ICs. |
| PPP | 150 W - Peak pulse power handling capability; enables robust protection against lightning-induced transients per IEC61000-4-5. |
| CT | 4 pF - Total junction capacitance at 0 V; preserves signal integrity up to >1 GHz in RF/data lines. |
| TJ Range | –55 °C to +175 °C - Full military-grade operating range; validated for aerospace and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for 1.0 W steady-state dissipation. |
| V(BR) Min | 71.3 V - Minimum breakdown voltage at 1 mA; guarantees turn-on threshold consistency across lot and temperature. |
Pinout & Package
Package: Axial-leaded, hermetically sealed voidless hard-glass case with tungsten slugs and cathode band marking. RoHS-compliant matte tin plating over copper leads. Weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected signal line ground reference. | Provides low-impedance path to ground during transient events when cathode is held at higher potential. |
| Cathode | Negative terminal; marked by colored band; connects to protected signal line. | Accepts positive-going transients; clamps voltage to VC when VAK exceeds V(BR); polarity-sensitive installation required. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk - critical for 20+ year field life in sealed avionics enclosures. |
| Category 1 metallurgical bond | Internal tungsten-copper interconnect qualified per MIL-STD-750 Method 2024 - ensures survivability under shock/vibration and thermal cycling. |
| 4 pF capacitance | Enables use on >1 Gbps serial links (e.g., RS-422, MIL-STD-1553B, ARINC 429) without signal distortion or timing skew. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±15 kV contact / ±20 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-line lightning surges - no external filtering needed. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) ≥100 krad(Si) per MicroNote 050 - suitable for LEO satellite bus protection. |
Applications
| Avionics Data Bus Protection | Military Radio Front-End |
|---|---|
|
Use Scenario: Protecting MIL-STD-1553B stubs and transceivers from induced lightning transients and ESD during ground handling. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus line and chassis ground, clamping fast-rising common-mode surges before they reach interface ICs. Use Value: 4 pF capacitance avoids signal rise-time degradation; 103 V clamping ensures transceiver I/O stays within absolute max ratings during 2 kV IEC61000-4-5 surges. |
Use Scenario: Shielding HF/VHF receiver front-end amplifiers from antenna-coupled ESD and nearby EMP pulses. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at SMA connector feedthrough, shunting transients before LNA input. Use Value: Hermetic glass package prevents parameter drift in humid coastal environments; 150 W rating handles multi-pulse EMP waveforms without degradation. |
| Satellite Telemetry Interface | Downhole Oilfield Sensor Node |
|
Use Scenario: Safeguarding RS-422 telemetry links between payload modules and flight computer in radiation-intensive LEO orbits. IC Role / Device Role / Timing Role: Unidirectional TVS on differential pair, referenced to isolated digital ground, suppressing common-mode noise and single-event transients. Use Value: Radiation-hardened construction maintains V(BR) stability after 100 krad(Si); 175 °C max TJ supports passive thermal management in sealed housings. |
Use Scenario: Protecting pressure/temperature sensor analog outputs in high-temperature (>150 °C) oil well logging tools exposed to switching surges from motor drives. IC Role / Device Role / Timing Role: TVS mounted at sensor housing feedthrough, clamping cable-borne transients before signal conditioning circuitry. Use Value: Voidless seal prevents outgassing in vacuum-rated tool housings; 150 °C operational limit matches silicon carbide sensor electronics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ64A | Surface-mount DO-214AB package; 64 V VWM; 100 V VC @ 32.4 A; 400 W PPP; 100 pF CT. | Higher capacitance limits use to sub-100 Mbps lines; SMT footprint reduces board space but lacks hermetic seal. | Select when cost, volume assembly, or PCB real estate outweighs radiation tolerance and ultra-low capacitance needs. |
| 1N6377 | Axial-leaded, glass-passivated; 64 V VWM; 103 V VC @ 300 A; 150 W PPP; 10 pF CT; non-hermetic. | Lacks voidless seal and Category 1 bond; not qualified for aerospace/military extended-life programs. | Use only in commercial industrial controls where 10 pF capacitance and 10-year MTBF are acceptable. |
Compared with SMCJ64A and 1N6377, MV1N8172US/TR uniquely combines 4 pF capacitance, hermetic reliability, and radiation hardness - making it irreplaceable for high-frequency, long-lifecycle, safety-critical systems where parameter drift or failure-in-place is unacceptable.
Availability
MV1N8172US/TR is available at Aetrix Electronics and suitable for avionics data buses, military radio front-ends, satellite telemetry interfaces, downhole sensor nodes, and other high-reliability applications requiring stable component supply across extended product lifecycles.
Supply support for MV1N8172US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
MV1N8172US/TR belongs to Microsemi's 1N8149–1N8182 family of hermetic TVS diodes, engineered specifically for mission-critical transient suppression in defense, space, and energy exploration systems where failure is not an option.
FAQ
What is the clamping voltage of MV1N8172US/TR at its rated surge current?
The MV1N8172US/TR has a maximum clamping voltage (VC) of 103.0 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and guarantees that downstream circuitry remains within safe operating limits during worst-case transients. The MV1N8172US/TR maintains this clamping performance across its full –55 °C to +175 °C junction temperature range.
Is MV1N8172US/TR suitable for bidirectional transient protection?
No - MV1N8172US/TR is strictly unidirectional. For bidirectional protection, two MV1N8172US/TR devices must be connected in anti-parallel (cathode-to-anode), as shown in Figure 5 of the original datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping and power ratings per polarity. A dedicated bidirectional variant is not offered in this family.
Does MV1N8172US/TR meet RoHS requirements?
Yes - MV1N8172US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature (MV1N8172US/TR-e3). Its axial leads feature matte tin plating over copper, and the hermetic glass package contains no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE substances above EU RoHS thresholds.
What is the meaning of the "MV" prefix in MV1N8172US/TR?
The "MV" prefix denotes JANTXV-level reliability qualification per MIL-PRF-19500/505, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. MV1N8172US/TR is rated for use in high-reliability military and aerospace applications where failure modes must be statistically bounded and traceable to lot-level test records.
Can MV1N8172US/TR be used in place of standard 1N8172 without modification?
No - MV1N8172US/TR differs from commercial 1N8172 in reliability level (JANTXV vs. commercial), hermetic seal validation, and Category 1 metallurgical bonding. While electrically identical in VWM, VC, and PPP, the MV prefix mandates stricter lot acceptance testing and traceability. Substitution requires formal qualification per system-level reliability requirements.
MV1N8172US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 1.45A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8172US/TR FAQ
1.How can I place an order for MV1N8172US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8172US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8172US/TR reliable?
The price and inventory of MV1N8172US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8172US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8172US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8172US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8172US/TR?
MV1N8172US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8172US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8172US/TR?
For technical support, including MV1N8172US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8172US/TR requirements.
6.How does Aetrix verify that MV1N8172US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8172US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8172US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8172US/TR?
All MV1N8172US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8172US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8172US/TR part is unused and in its original packaging.
Return procedure for MV1N8172US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8172US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
