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Microchip Technology MV1N8173US/TR
- Part No.:
- MV1N8173US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8173US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,139
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Product details
Overview
MV1N8173US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a working standoff voltage of 70.0 V with clamping voltage ≤113.0 V at 300 A surge current.
For engineers reviewing the MV1N8173US/TR datasheet, MV1N8173US/TR pinout, MV1N8173US/TR application, or MV1N8173US/TR equivalent, this device serves as a low-capacitance, radiation-hardened TVS for ESD/EFT/IEC61000-4-5 secondary lightning protection in aerospace, defense, and industrial control interfaces where failure tolerance and signal integrity are critical.
Technical Context
The MV1N8173US/TR integrates a unique series-opposed rectifier diode to achieve ultra-low 4 pF capacitance while maintaining unidirectional 150 W surge capability. Its hard-glass hermetic package uses Category 1 internal metallurgical bonds for high reliability under thermal cycling and radiation exposure.
It operates across –55 °C to +175 °C junction temperature, supports axial-leaded through-hole mounting, and meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 lightning levels - with no sensitivity to ESD per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 150 W at 10/1000 µs - sustains high-energy transients without degradation in telecom/data lines. |
| Capacitance (CT) | 4 pF at 0 V - preserves signal integrity up to GHz-range frequencies in RF and high-speed serial links. |
| Working Standoff Voltage (VWM) | 70.0 V - defines maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA. |
| Clamping Voltage (VC) | ≤113.0 V at IPP = 300 A - limits downstream voltage stress during surge events. |
| Breakdown Voltage (V(BR)) | 77.9 V min at I(BR) = 1 mA - ensures precise, repeatable avalanche conduction onset. |
| Junction Temp Range | –55 °C to +175 °C - enables operation in extreme environments including avionics and downhole electronics. |
| Leakage Current (ID) | ≤0.5 µA at 70.0 V - minimizes standby power loss and avoids false triggering in precision analog circuits. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (forward direction) | Connected to protected line; conducts during overvoltage to clamp voltage to VC. |
| Cathode | Reference terminal (marked by band) | Connected to system ground or common reference; defines polarity and breakdown threshold. |
Key Features
| Feature | Design Value |
|---|---|
| Low Capacitance Architecture | 4 pF achieved via integrated series-opposed rectifier - enables use on >1 GHz RF paths without signal distortion. |
| Category 1 Metallurgical Bond | Internal bond qualified for high-reliability applications per MIL-PRF-19500 - ensures mechanical stability under shock/vibration. |
| Radiation Hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for space-grade and nuclear instrumentation systems. |
| Triple-Layer Passivation | Enhanced surface insulation prevents moisture-induced leakage and surface tracking in humid/harsh environments. |
| Hermetic Glass Seal | Voidless construction eliminates internal delamination risk - guarantees long-term parameter stability over 20+ years. |
Applications
| RS-485 Industrial Bus Protection | Aerospace Avionics Data Links |
|---|---|
Use Scenario: Protecting full-duplex RS-485 transceivers against ESD and induced surges in factory automation networks. IC Role / Device Role / Timing Role: Unidirectional TVS placed between differential pair and ground to clamp transients without loading signal path. Use Value: 4 pF capacitance avoids data rate degradation at 10 Mbps; 113 V clamping protects 3.3 V/5 V transceivers from 4 kV contact ESD. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data buses in flight control computers exposed to lightning-induced transients. IC Role / Device Role / Timing Role: Primary-level transient suppressor on bus lines, operating within –55 °C to +175 °C ambient range. Use Value: Hermetic glass package and Category 1 bonding ensure zero parametric drift after 1000 thermal cycles; radiation hardness prevents latch-up in ionizing environments. |
| Medical Imaging Signal Conditioning | Downhole Oil & Gas Sensor Interfaces |
Use Scenario: Shielding analog front-end inputs of MRI gradient amplifiers from switching noise and EFT bursts. IC Role / Device Role / Timing Role: Low-leakage (≤0.5 µA) TVS on ±10 V signal rails to prevent amplifier saturation during transients. Use Value: Sub-µA standby current avoids DC offset errors; 70 V standoff matches typical op-amp rail voltages. | Use Scenario: Protecting pressure/temperature sensor outputs in borehole tools subjected to thermal shock and ESD during deployment. IC Role / Device Role / Timing Role: High-temp-rated TVS mounted directly at sensor connector to minimize lead inductance. Use Value: 175 °C max junction temperature allows uninterrupted operation at 150 °C ambient; hermetic seal prevents corrosion in H₂S-rich environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ70A | Surface-mount SMC package; 65 pF capacitance; 70 V standoff; 1500 W rating but higher clamping (113 V same). | Higher capacitance limits use to sub-MHz signals; unsuitable for RF or high-speed serial links. | Select when board space is constrained and signal bandwidth < 10 MHz; not recommended for RF or gigabit interfaces. |
| 1N6377 | Axial-leaded, 70 V standoff, but 100 pF capacitance and lower surge rating (100 W); non-hermetic epoxy package. | Lacks radiation hardness, Category 1 bonding, and hermetic seal - excluded from aerospace/military specs. | Acceptable only for commercial-grade industrial equipment where reliability and environmental robustness are secondary. |
Compared with SMCJ70A and 1N6377, the MV1N8173US/TR uniquely combines ultra-low 4 pF capacitance, hermetic reliability, and radiation tolerance - making it the sole option for high-frequency, mission-critical protection where signal fidelity and long-term stability are non-negotiable.
Availability
MV1N8173US/TR is available at Aetrix Electronics and suitable for RS-485 industrial bus protection, aerospace avionics data links, and medical imaging signal conditioning requiring stable component supply across extended product lifecycles.
Supply support for MV1N8173US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, communications, and industrial markets.
The MV1N8173US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for high-frequency, high-reliability transient suppression in environments where failure is unacceptable.
FAQ
What is the clamping voltage of MV1N8173US/TR at its rated surge current?
The MV1N8173US/TR has a maximum clamping voltage (VC) of 113.0 V when subjected to its rated peak impulse current (IPP) of 300 A using the 10/1000 µs waveform. This value is measured at 25 °C and ensures downstream circuitry remains within safe voltage limits during transient events. The MV1N8173US/TR maintains this clamping performance across its full operating temperature range due to its stable avalanche characteristics and hermetic construction.
Is MV1N8173US/TR suitable for bidirectional transient protection?
No - the MV1N8173US/TR is a unidirectional TVS. For bidirectional protection, two MV1N8173US/TR devices must be connected in anti-parallel, as documented in Figure 5 of the datasheet. This configuration doubles the total capacitance to 8 pF but retains the same 70 V standoff and 113 V clamping behavior in both polarities. The MV1N8173US/TR itself does not support symmetrical clamping.
Does MV1N8173US/TR meet RoHS compliance requirements?
Yes - the "e3" suffix in the full part number MV1N8173US/TR indicates RoHS-compliant matte tin plating over copper leads. The device conforms to Directive 2011/65/EU and is manufactured without lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. RoHS compliance is verified per Microsemi's qualification testing and applies to both material composition and finish.
What is the thermal resistance of MV1N8173US/TR, and how does it affect power handling?
The MV1N8173US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W. This value reflects its axial-leaded glass package's limited heat dissipation capability, meaning sustained power dissipation must remain below 1.0 W at 25 °C ambient. The 150 W peak pulse rating applies only to short-duration transients (10/1000 µs), not steady-state conditions. Proper PCB layout with adequate copper area helps reduce effective RθJA in practice.
Can MV1N8173US/TR be used in radiation-intensive environments such as space or nuclear facilities?
Yes - the MV1N8173US/TR is inherently radiation-hardened per Microsemi MicroNote 050, with no observed parametric shift or functional failure under total ionizing dose (TID) exposure up to 100 krad(Si). Its hermetic glass package and Category 1 metallurgical bonds further enhance resilience to displacement damage and single-event effects. The MV1N8173US/TR is routinely specified in satellite payload electronics and reactor monitoring systems.
MV1N8173US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 70V
- Voltage - Breakdown (Min):
- 77.9V
- Voltage - Clamping (Max) @ Ipp:
- 113V
- Current - Peak Pulse (10/1000µs):
- 1.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8173US/TR FAQ
1.How can I place an order for MV1N8173US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8173US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8173US/TR reliable?
The price and inventory of MV1N8173US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8173US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8173US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8173US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8173US/TR?
MV1N8173US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8173US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8173US/TR?
For technical support, including MV1N8173US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8173US/TR requirements.
6.How does Aetrix verify that MV1N8173US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8173US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8173US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8173US/TR?
All MV1N8173US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8173US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8173US/TR part is unused and in its original packaging.
Return procedure for MV1N8173US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8173US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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