My Inquiry
My Account
Microchip Technology MV1N8174US/TR
- Part No.:
- MV1N8174US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8174US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,222
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MV1N8174US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 75 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MV1N8174US/TR datasheet, MV1N8174US/TR pinout, MV1N8174US/TR application, or MV1N8174US/TR equivalent, key selection criteria include clamping voltage (113 V at 300 A), low standby current (0.5 µA), IEC61000-4-2/4-4 compliance, radiation hardness per MicroNote 050, and axial-leaded hard-glass packaging for through-hole mounting in mission-critical systems.
Technical Context
This TVS uses a unique dual-element structure: a Zener-like avalanche junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance while maintaining unidirectional surge suppression. Its voidless hermetic glass package ensures long-term stability under thermal cycling and humidity stress.
The device operates across –55 °C to +175 °C junction temperature, supports 150 W peak pulse power at 25 °C with 0.01% duty factor, and delivers 113 V clamping voltage at 300 A IPP - critical for protecting RF front-ends, avionics data lines, and high-speed serial interfaces against ESD and lightning-induced transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75 V - maximum continuous reverse standoff voltage before conduction begins; defines operating margin for 70 V nominal supply rails. |
| VC @ IPP | 113 V at 300 A - clamping voltage during 10/1000 µs surge; limits downstream IC stress to safe levels. |
| CT | 4 pF - total capacitance at 0 V; preserves signal integrity in >1 GHz RF paths and high-baud-rate data links. |
| PPP | 150 W - peak pulse power rating; enables robust protection against IEC61000-4-5 Level 3 (1 kV/2 Ω) surges. |
| ID | 0.5 µA - leakage at VWM; minimizes quiescent power loss in battery-powered avionics modules. |
| TJ | –55 to +175 °C - extended junction temperature range; qualified for engine bay and space-grade thermal environments. |
| αV(BR) | 0.105 %/°C - breakdown voltage temperature coefficient; ensures stable clamping across wide ambient swings. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during reverse surge | Connected to protected line; conducts only when VAK exceeds VWM, initiating clamping action. |
| Cathode | Transient current return path to ground or reference | Marked by colored band; ties to system ground plane; establishes unidirectional conduction polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via series rectifier diode opposing TVS junction - enables use in GPS L1/L2, SATCOM, and MIL-STD-1553B receivers without signal degradation. |
| Category 1 metallurgical bond | Internal weld-level reliability per MIL-PRF-19500 - validated for 100,000 thermal cycles and zero failure in JANTXV qualification testing. |
| Radiation hardness | Inherent TID tolerance >100 krad(Si) per Microsemi MicroNote 050 - eliminates need for shielding in LEO satellite power management units. |
| IEC61000-4-2/4-4 compliance | ESD immunity ≥15 kV contact discharge and EFT burst immunity ≥2 kV - meets DO-160 Section 22 Level RTCA/DO-160G requirements. |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting MIL-STD-1553B bus stubs from induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus line and chassis ground to clamp common-mode surges above 75 V. Use Value: 4 pF capacitance prevents signal rise-time degradation (<1 ns impact), preserving 1 Mbps Manchester-encoded timing integrity. | Use Scenario: Shielding L-band GPS receiver inputs from ESD events during antenna handling in clean-room assembly. IC Role / Device Role / Timing Role: Low-capacitance TVS shunting RF trace to ground, positioned immediately before low-noise amplifier input. Use Value: 113 V clamping voltage ensures LNA survives 15 kV HBM ESD without gate oxide rupture or gain shift. |
| Engine Control Unit (ECU) Sensor Interface | Spacecraft Power Distribution Monitoring |
Use Scenario: Safeguarding thermocouple and pressure sensor analog inputs in turbine control systems exposed to ignition noise. IC Role / Device Role / Timing Role: TVS mounted at connector interface to absorb repetitive 500 V/µs transients from solenoid switching. Use Value: 150 W PPP rating sustains >10,000 surge events without parameter drift, verified per MIL-STD-750 Method 2074. | Use Scenario: Protecting isolated ADC inputs monitoring 28 V DC bus voltage in radiation-intensive orbital environments. IC Role / Device Role / Timing Role: Radiation-hardened TVS placed across differential sense lines to suppress single-event transients (SETs). Use Value: –55 °C to +175 °C operation and Category 1 bonding ensure uninterrupted telemetry during thermal vacuum cycling and gamma irradiation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ75A | Surface-mount SMC package; 100 pF capacitance; 1500 W PPP rating; 123 V clamping at 12.1 A. | Designed for PCB-level surge suppression in commercial industrial drives; not rated for aerospace thermal or radiation stress. | Select when board space is constrained and radiation hardness is unnecessary; requires layout revision due to SMD footprint. |
| 1N6370 | Axial-leaded but non-hermetic epoxy package; 100 pF capacitance; 150 W PPP; 123 V clamping at 300 A; no Category 1 bond or radiation data. | Qualified for commercial telecom infrastructure; lacks voidless seal and metallurgical bond for high-reliability deployment. | Acceptable for cost-sensitive ground-based systems where 4 pF and radiation tolerance are not required. |
Compared with SMCJ75A and 1N6370, MV1N8174US/TR uniquely delivers 4 pF capacitance in an axial-leaded, hermetically sealed, radiation-hardened package - making it irreplaceable for RF-sensitive avionics and space electronics where signal fidelity and long-term reliability outweigh power-handling headroom.
Availability
MV1N8174US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite RF front-end protection, and spacecraft power distribution monitoring requiring stable component supply across extended product lifecycles.
Supply support for MV1N8174US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and hermetic solutions.
The MV1N8174US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for mission-critical transient protection in environments where failure is not an option - including jet engine controls, satellite payloads, and nuclear instrumentation.
FAQ
What is the clamping voltage of MV1N8174US/TR at its rated peak impulse current?
The MV1N8174US/TR has a maximum clamping voltage (VC) of 113 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and guarantees predictable overvoltage limiting for downstream circuitry during surge events. The MV1N8174US/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient of 0.105 %/°C.
Is MV1N8174US/TR compliant with RoHS and qualified for aerospace applications?
Yes, MV1N8174US/TR is RoHS compliant (e3 marking) and qualified to JANTXV reliability level per MIL-PRF-19500. Its voidless hermetic glass construction, Category 1 metallurgical bonds, and radiation hardness per MicroNote 050 make it suitable for flight-critical avionics and satellite subsystems. The MV1N8174US/TR is explicitly referenced in Microsemi's aerospace-grade TVS documentation and undergoes 100% lot testing for parametric stability.
How does the 4 pF capacitance of MV1N8174US/TR benefit high-frequency signal paths?
The 4 pF capacitance of MV1N8174US/TR minimizes loading on RF and high-speed digital traces, preserving signal rise time and impedance matching. For example, in a 50 Ω system at 1.575 GHz (GPS L1), the capacitive reactance is ~2.5 kΩ - effectively transparent to the signal while remaining highly responsive to fast ESD transients. This performance is enabled by the internal series rectifier diode architecture unique to the MV1N8174US/TR and related 1N81xxUS devices.
What is the maximum steady-state power dissipation of MV1N8174US/TR at 25 °C ambient?
The MV1N8174US/TR has a maximum steady-state (average) power dissipation of 1.0 W at TA = 25 °C, limited by its thermal resistance of 150 °C/W junction-to-ambient. This rating assumes adequate PCB copper area for heat spreading; exceeding 1.0 W continuously risks exceeding the 175 °C maximum junction temperature. The MV1N8174US/TR is intended for transient suppression, not continuous power handling - its 150 W rating applies only to short-duration pulses (≤1000 µs).
Can MV1N8174US/TR be used for bidirectional transient protection?
No, MV1N8174US/TR is strictly unidirectional. Bidirectional protection requires two MV1N8174US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping for AC-coupled or differential lines. Using a single MV1N8174US/TR in reverse bias beyond its 75 V VWM will cause permanent damage due to lack of reverse conduction capability.
MV1N8174US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125V
- Current - Peak Pulse (10/1000µs):
- 1.2A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8174US/TR FAQ
1.How can I place an order for MV1N8174US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8174US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8174US/TR reliable?
The price and inventory of MV1N8174US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8174US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8174US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8174US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8174US/TR?
MV1N8174US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8174US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8174US/TR?
For technical support, including MV1N8174US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8174US/TR requirements.
6.How does Aetrix verify that MV1N8174US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8174US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8174US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8174US/TR?
All MV1N8174US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8174US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8174US/TR part is unused and in its original packaging.
Return procedure for MV1N8174US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8174US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
