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Microchip Technology MV1N8175US/TR
- Part No.:
- MV1N8175US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8175US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,041
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Product details
Overview
MV1N8175US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 95.0 V minimum breakdown voltage (V(BR)), 82.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, avionics data buses, and MIL-STD-750-compliant systems.
For engineers reviewing the MV1N8175US/TR datasheet, MV1N8175US/TR pinout, MV1N8175US/TR application, or MV1N8175US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (0.5 µA max at VWM), and IEC61000-4-2/4-4 compliance - all critical for radiation-hardened, lightning-protected, and fail-safe embedded designs.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction ensures zero internal voids and supports operation from –55 °C to +175 °C junction temperature.
The device uses internal tungsten slugs and Category 1 metallurgical bonds for mechanical robustness and radiation hardness per MicroNote 050. Clamping occurs at ≤137.0 V (VC) under 300 A IPP surge, with thermal resistance RθJA = 150 °C/W and steady-state power rating of 1.0 W at 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 µs) | 150 W - sustains single high-energy transients without degradation in telecom or aerospace surge environments |
| Working Standoff Voltage (VWM) | 82.0 V - maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA, suitable for 72 V DC bus protection |
| Breakdown Voltage (V(BR)) | 95.0 V min @ 1 mA - precise avalanche onset threshold for predictable clamping initiation |
| Clamping Voltage (VC) | 137.0 V max @ 300 A IPP - limits downstream voltage stress during lightning-induced surges per IEC61000-4-5 |
| Capacitance (CT) | 4 pF @ 0 V - preserves signal integrity in >1 GHz RF paths and high-speed serial links |
| Junction Temperature Range | –55 °C to +175 °C - enables deployment in engine control units and satellite power conditioning |
| Leakage Current (ID) | 0.5 µA max @ VWM - minimizes power loss in always-on monitoring circuits |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during reverse-bias surge | Connected to protected line; conducts only during overvoltage events above VWM |
| Cathode | Clamped output node | Connected to ground or reference rail; defines polarity and sets VWM/VC relationship |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in humid or vacuum environments |
| Category 1 metallurgical bond | Ensures mechanical integrity under shock/vibration per MIL-STD-883, critical for flight-critical systems |
| Triple-layer passivation | Prevents surface conduction and leakage increase under high humidity or contamination |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands handling without preconditioning - reduces test overhead in cleanroom assembly |
| Inherent radiation hardness | No parametric shift after total ionizing dose exposure up to 100 krad(Si), per MicroNote 050 |
Applications
| Avionics Data Bus Protection | RF Front-End Surge Suppression |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed across receiver inputs to shunt surge energy before it reaches sensitive input stages. Use Value: 4 pF capacitance avoids signal distortion at 1 MHz data rates; 137.0 V VC limits voltage seen by receiver IC to safe levels during 300 A surges. | Use Scenario: Shielding LNA inputs in S-band radar receivers from ESD events during antenna maintenance or environmental coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at SMA connector feedthrough to minimize stub inductance. Use Value: 4 pF CT preserves noise figure and gain flatness up to 3.5 GHz; hermetic seal prevents RF leakage path degradation in humid bays. |
| Satellite Power Bus Clamp | High-Voltage Industrial Sensor Interface |
Use Scenario: Secondary overvoltage protection on 100 V DC power distribution lines feeding attitude control electronics in LEO satellites. IC Role / Device Role / Timing Role: Standoff-rated TVS connected between bus and chassis ground to clamp switching transients from motor drivers. Use Value: 82.0 V VWM matches bus nominal; –55 °C to +175 °C range accommodates orbital thermal cycling; radiation hardness eliminates derating. | Use Scenario: Protecting isolated analog inputs of 4–20 mA loop-powered sensors exposed to 4 kV EFT bursts in factory automation cabinets. IC Role / Device Role / Timing Role: TVS placed across input terminals upstream of isolation amplifier to absorb fast transients before they couple into signal path. Use Value: 0.5 µA ID prevents loading of high-impedance sensor outputs; 150 W PPP handles repetitive EFT pulses without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ82A | Surface-mount DO-214AB package; 6.5 pF capacitance; 1500 W peak power; 113 V VC @ 300 A | Higher clamping voltage and capacitance; suited for PCB space-constrained but less RF-sensitive applications | Select when board real estate is limited and RF bandwidth < 500 MHz; not suitable for hermetic or radiation-hardened use |
| 1N6322 | Axial-leaded, non-hermetic epoxy package; 100 W PPP; 100 V V(BR); 140 V VC @ 200 A; no radiation hardness spec | Lacks Category 1 bond and hermetic seal; lower surge rating and higher capacitance (~10 pF) | Acceptable for commercial industrial controls where reliability and radiation tolerance are not required |
Compared with SMCJ82A and 1N6322, the MV1N8175US/TR uniquely combines hermetic sealing, 4 pF capacitance, and radiation hardness - making it irreplaceable in aerospace, defense, and nuclear instrumentation where failure modes must be eliminated, not mitigated.
Availability
MV1N8175US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, RF front-end surge suppression, and satellite power bus clamp applications requiring stable component supply, long-lifecycle support, and traceable sourcing for Class H and Class K programs.
Supply support for MV1N8175US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The MV1N8175US/TR belongs to Microsemi's legacy 1N81xx family of hermetic TVS diodes, engineered specifically for fail-safe transient protection in mission-critical systems where standard plastic-packaged devices cannot meet reliability, longevity, or environmental survivability requirements.
FAQ
What is the clamping voltage of MV1N8175US/TR at its rated peak surge current?
The MV1N8175US/TR has a maximum clamping voltage (VC) of 137.0 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during a worst-case transient event. The low VC relative to its 95.0 V breakdown voltage reflects efficient avalanche conduction and minimal dynamic impedance.
Is MV1N8175US/TR compliant with RoHS and lead-free soldering standards?
Yes, MV1N8175US/TR is RoHS compliant (e3 marking) and qualified for lead-free reflow soldering up to 260 °C for 10 seconds. Its axial leads feature matte tin plating over copper, eliminating lead content while maintaining compatibility with standard wave and hand-solder processes. The hermetic glass body remains unaffected by high-temperature solder profiles.
Does MV1N8175US/TR support bidirectional transient suppression?
No, MV1N8175US/TR is strictly unidirectional. Bidirectional protection requires two MV1N8175US/TR devices connected in anti-parallel, as documented in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but provides symmetrical clamping for AC-coupled or differential signal lines.
What is the thermal resistance and power derating behavior of MV1N8175US/TR?
MV1N8175US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W. Its steady-state power rating is 1.0 W at 25 °C ambient, derating linearly to zero at +175 °C junction temperature, per the Figure 3 derating curve. For pulsed operation, peak power remains 150 W regardless of ambient, provided duty cycle stays below 0.01%.
How does the "Category 1 metallurgical bond" in MV1N8175US/TR improve reliability?
The Category 1 metallurgical bond in MV1N8175US/TR refers to a controlled, diffusion-based intermetallic interface between the silicon die and tungsten slug, certified per MIL-STD-750 Method 2035. This bond resists mechanical fatigue under thermal cycling and vibration, prevents delamination during thermal shock, and ensures stable electrical contact over 20+ years - a requirement for satellite and nuclear instrumentation deployments.
MV1N8175US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 82V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 1.09A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8175US/TR FAQ
1.How can I place an order for MV1N8175US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8175US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8175US/TR reliable?
The price and inventory of MV1N8175US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8175US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8175US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8175US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8175US/TR?
MV1N8175US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8175US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8175US/TR?
For technical support, including MV1N8175US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8175US/TR requirements.
6.How does Aetrix verify that MV1N8175US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8175US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8175US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8175US/TR?
All MV1N8175US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8175US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8175US/TR part is unused and in its original packaging.
Return procedure for MV1N8175US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8175US/TR Tags
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