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Microchip Technology MV1N8176US/TR
- Part No.:
- MV1N8176US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8176US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,029
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Product details
Overview
MV1N8176US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 94 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonding and low-leakage operation (≤0.5 µA at VWM), designed for high-reliability ESD/EFT protection in aerospace, defense, and industrial control interfaces.
For engineers reviewing the MV1N8176US/TR datasheet, MV1N8176US/TR pinout, MV1N8176US/TR application, or MV1N8176US/TR equivalent, key selection criteria include clamping voltage (VC = 137 V), surge current rating (IPP = 300 A), temperature coefficient of breakdown voltage (αV(BR) = 0.106 %/°C), and RoHS-compliant axial-leaded glass package construction.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic seal and tungsten slug construction support operation from –55 °C to +175 °C junction temperature.
The device delivers 150 W peak pulse power under IEC 61000-4-5 surge conditions and meets IEC 61000-4-2 (ESD) and IEC 61000-4-4 (EFT) immunity requirements. Standby leakage remains ≤0.5 µA at 94 V standoff, enabling use in high-impedance signal paths without loading effects.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 94 V - Maximum continuous reverse-bias voltage before conduction begins; sets operating margin for protected circuitry. |
| V(BR) min | 104 V - Minimum breakdown voltage at 1 mA test current; ensures reliable clamping onset above normal operating voltage. |
| VC @ IPP | 137 V - Clamping voltage at 300 A peak impulse; defines maximum voltage seen by downstream ICs during surge events. |
| CT | 4 pF - Total capacitance at 0 V; enables use in >1 GHz RF front-ends and high-speed data lines without signal distortion. |
| PPP | 150 W - Peak pulse power at 10/1000 µs waveform; supports robust secondary lightning protection per IEC 61000-4-5 Level 3. |
| ID @ VWM | ≤0.5 µA - Standby leakage current at rated standoff; preserves signal integrity in precision analog and low-power sensor interfaces. |
| TJ Range | –55 to +175 °C - Junction temperature range; qualified for extended-temperature military and avionics applications. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts only during reverse-transient clamping when cathode is held at higher potential. |
| Cathode | Negative terminal; marked with band | Connected to system ground or reference rail; defines polarity-sensitive clamping direction for unidirectional protection. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 4 pF total capacitance enables protection of USB 3.0, HDMI, RF transceivers, and high-speed serial links without bandwidth degradation. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for MIL-PRF-19500 and space-grade applications requiring zero failure tolerance. |
| Hermetic glass seal | Voidless construction prevents moisture ingress and parametric drift over time, ensuring stable V(BR) and VC across 20+ year service life. |
| Low standby leakage | ≤0.5 µA at 94 V standoff allows integration into battery-powered sensors and low-power IoT nodes without measurable quiescent drain. |
Applications
| Radar Transceiver Front-End | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from induced lightning transients and ESD during antenna switching. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at SMA connector feedthrough to limit voltage excursion to <137 V during 300 A surges. Use Value: 4 pF capacitance avoids detuning of 1.2–1.4 GHz matching networks; hermetic seal maintains performance after 1000 thermal cycles. | Use Scenario: Safeguarding ARINC 429 differential receivers against coupling-induced transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS on each input line (anode to signal, cathode to chassis ground) to clamp common-mode surges without affecting DC bias. Use Value: 94 V VWM exceeds ARINC 429 ±10 V differential swing and 27 V aircraft bus noise margins; ≤0.5 µA leakage prevents false triggering. |
| Industrial PLC Analog Input Module | Satellite Command & Telemetry Link |
Use Scenario: Shielding 4–20 mA current-loop inputs from field-wiring induced surges in factory automation environments. IC Role / Device Role / Timing Role: Series-connected TVS on loop supply line to clamp fast transients while preserving milliamp-level accuracy. Use Value: 150 W PPP handles repetitive 1 kV/500 A surges per IEC 61000-4-5; –55 °C to +175 °C rating supports operation inside sealed enclosures near motors. | Use Scenario: Protecting S-band telemetry receivers from single-event transients and launch-vibration-induced ESD in LEO satellite payloads. IC Role / Device Role / Timing Role: Radiation-hardened TVS on downlink RF path to absorb TID-induced leakage spikes without parameter shift. Use Value: Inherent radiation hardness per MicroNote 050; 4 pF capacitance avoids phase noise degradation in 2.2 GHz PLL-based demodulators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ93A | Surface-mount DO-214AB package; 93 V VWM; 170 W PPP; 15 pF capacitance. | Higher capacitance limits use to sub-100 MHz signals; lacks hermetic seal and Category 1 bond. | Select when board space is constrained and radiation/long-life requirements are not critical. |
| 1N8176US/TR (MV variant) | Same electrical specs; JANTXV-grade screening per MIL-PRF-19500; enhanced burn-in and lot traceability. | Required for flight-critical avionics where process controls and failure rate data are mandated. | Choose MV1N8176US/TR when full MIL-spec qualification, radiation tolerance, and 100% lot testing are required. |
Compared with SMCJ93A and the commercial 1N8176US/TR, MV1N8176US/TR provides superior long-term reliability via hermetic sealing and Category 1 metallurgy-critical for systems where field replacement is impossible and parametric stability over decades must be guaranteed.
Availability
MV1N8176US/TR is available at Aetrix Electronics and suitable for radar front-ends, avionics data buses, and industrial PLC analog modules requiring stable component supply across extended product lifecycles.
Supply support for MV1N8176US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and extended-temperature solutions.
The 1N8149–1N8182 series was developed specifically for mission-critical transient protection where failure is unacceptable-targeting applications demanding hermetic sealing, ultra-low capacitance, and MIL-qualified reliability.
FAQ
What is the clamping voltage of MV1N8176US/TR at its rated peak surge current?
The MV1N8176US/TR has a maximum clamping voltage (VC) of 137 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during transient events. The MV1N8176US/TR maintains this clamping performance across its full operating temperature range due to its stable silicon junction and hermetic packaging.
Is MV1N8176US/TR RoHS compliant?
Yes, MV1N8176US/TR is RoHS compliant, as indicated by the "e3" suffix in its nomenclature and confirmed in Microsemi's official documentation. The device uses matte tin plating over copper leads and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Compliance is verified per JEDEC J-STD-609 and applies to both commercial and MV-grade variants of the part.
How does the 4 pF capacitance of MV1N8176US/TR benefit high-frequency circuit protection?
The 4 pF capacitance of MV1N8176US/TR minimizes signal distortion and impedance mismatch in RF and high-speed digital paths-enabling effective transient suppression on interfaces such as L-band radar receivers, HDMI 2.0, and USB 3.1 Gen 2 without degrading rise time or insertion loss. This ultra-low CT is achieved via an internal series rectifier configuration, and the MV1N8176US/TR sustains it across DC to 1 GHz, unlike conventional TVS diodes with >10 pF.
What is the meaning of the "MV" prefix in MV1N8176US/TR?
The "MV" prefix in MV1N8176US/TR denotes JANTXV-level qualification per MIL-PRF-19500, indicating enhanced screening including extended temperature cycling, 100% lot testing, and tighter parameter limits versus commercial-grade 1N8176US/TR. The MV1N8176US/TR undergoes additional burn-in, hermeticity verification, and radiation hardness assurance-making it suitable for flight hardware and other safety-critical deployments where zero latent defects are mandatory.
Can MV1N8176US/TR be used for bidirectional transient protection?
No, MV1N8176US/TR is strictly unidirectional. For bidirectional protection, two MV1N8176US/TR devices must be connected in anti-parallel (cathode-to-anode), as documented in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping voltage and surge capability per polarity. Direct substitution with a bidirectional TVS is not recommended due to the MV1N8176US/TR's unique low-capacitance architecture.
MV1N8176US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 104V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 980mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8176US/TR FAQ
1.How can I place an order for MV1N8176US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8176US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8176US/TR reliable?
The price and inventory of MV1N8176US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8176US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8176US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8176US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8176US/TR?
MV1N8176US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8176US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8176US/TR?
For technical support, including MV1N8176US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8176US/TR requirements.
6.How does Aetrix verify that MV1N8176US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8176US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8176US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8176US/TR?
All MV1N8176US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8176US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8176US/TR part is unused and in its original packaging.
Return procedure for MV1N8176US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8176US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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