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Microchip Technology MV1N8177US/TR
- Part No.:
- MV1N8177US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8177US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,233
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Product details
Overview
MV1N8177US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 114 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonds, triple-layer passivation, and RoHS-compliant matte tin plating for high-reliability aerospace and defense transient protection.
For engineers reviewing the MV1N8177US/TR datasheet, MV1N8177US/TR pinout, MV1N8177US/TR application, or MV1N8177US/TR equivalent, key selection criteria include low-capacitance ESD/EFT immunity per IEC61000-4-2/4-4, clamping voltage of 168 V at 300 A surge, and hermetic glass package suitability for radiation-hardened environments.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction enables operation from –55 °C to +175 °C junction temperature with 150 W peak pulse power rating.
The device delivers 114 V working standoff voltage (VWM), 168 V clamping voltage (VC) at 300 A IPP, and <0.5 µA standby current at rated VWM. Its 0.107 %/°C breakdown voltage temperature coefficient ensures stable overvoltage protection across wide thermal ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 114 V - Maximum continuous reverse-biased operating voltage before conduction begins. |
| VC @ IPP=300 A | 168 V - Clamped voltage during 10/1000 µs surge, limiting downstream circuit stress. |
| Capacitance | 4 pF - Enables use in >1 GHz RF front-ends and high-speed data lines without signal distortion. |
| PPP | 150 W - Peak transient energy absorption capability under standardized 10/1000 µs waveform. |
| TJ Range | –55 °C to +175 °C - Supports operation in extreme environments including avionics and downhole tools. |
| αV(BR) | 0.107 %/°C - Predictable breakdown voltage drift over temperature for precision protection design. |
| RθJA | 150 °C/W - Thermal resistance defining maximum steady-state power dissipation on standard PCB layout. |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs, cathode band marking, RoHS-compliant matte tin plating over copper leads. Dimensions: BD = 0.060–0.085 in (1.52–2.16 mm), LL = 0.800–1.300 in (20.32–33.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during positive surge | Connected to protected line; conducts only when voltage exceeds VWM in forward direction. |
| Cathode | Transient current exit point during positive surge | Marked by band; connected to ground or common reference; defines unidirectional clamping polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and long-term parameter drift in mission-critical systems. |
| Category 1 metallurgical bond | Meets MIL-STD-750 requirements for high-reliability space and defense applications. |
| Triple-layer passivation | Prevents surface leakage and enhances stability under high humidity and ionizing radiation. |
| Low 4 pF capacitance | Preserves signal integrity in RF transceivers, high-speed serial links, and radar receivers. |
| Nonsensitive to ESD | Withstands handling per MIL-STD-750 Method 1020 without parameter shift or failure. |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients and ESD events in airborne electronics. IC Role / Device Role / Timing Role: Unidirectional TVS placed between data line and chassis ground to clamp surges above 114 V while preserving signal fidelity. Use Value: 4 pF capacitance avoids signal rise-time degradation; 168 V clamping ensures receiver ICs remain within absolute maximum ratings. | Use Scenario: Shielding L-band and S-band RF amplifiers and mixers from electrostatic discharge and switching transients in low-earth-orbit satellite payloads. IC Role / Device Role / Timing Role: Standoff protection element mounted directly at RF connector interface to shunt fast transients before entering sensitive analog stages. Use Value: Hermetic glass package withstands vacuum outgassing and total ionizing dose; 150 W PPP handles pulsed ESD events without degradation. |
| Downhole Oilfield Instrumentation | Radiation-Hardened Power Supply Input |
Use Scenario: Safeguarding sensor signal conditioning circuits in borehole logging tools exposed to high temperature and mechanical shock. IC Role / Device Role / Timing Role: Primary transient suppressor on analog sensor outputs and digital control lines operating at 125 °C ambient. Use Value: –55 °C to +175 °C operating range accommodates deep-well thermal profiles; Category 1 bond ensures reliability over 10+ year missions. | Use Scenario: Input-stage surge suppression for DC-DC converters in nuclear reactor monitoring systems where single-event burnout must be avoided. IC Role / Device Role / Timing Role: First-line protection on 100 V input rail, absorbing IEC61000-4-5 Level 3 surges before reaching regulator ICs. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for additional shielding; 114 V VWM matches industrial 100 V bus standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ110A | Surface-mount DO-214AB package; 110 V VWM; 170 V VC @ 300 A; 6.5 pF capacitance. | Higher capacitance limits use in >500 MHz circuits; lacks hermetic seal and radiation hardness. | Preferred for cost-sensitive commercial designs requiring SMT assembly and moderate reliability. |
| 1N8177US/TR (MV version) | Same electrical specs but with JANTXV-grade reliability screening and enhanced test coverage per MIL-PRF-19500. | Qualified for spaceflight and military platforms requiring full lot traceability and extended temperature validation. | Select when compliance with MIL-PRF-19500 Class V or NASA EEE-INST-002 is mandatory. |
Compared with SMCJ110A and the commercial 1N8177US/TR, MV1N8177US/TR provides lower capacitance, hermetic reliability, and radiation tolerance-critical for aerospace and defense systems where failure modes must be eliminated-not just mitigated.
Availability
MV1N8177US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite RF front-end protection, and downhole oilfield instrumentation requiring stable component supply and long-term obsolescence management.
Supply support for MV1N8177US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
MV1N8177US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient protection where zero-failure tolerance, extreme environmental resilience, and ESD/EFT immunity are non-negotiable.
FAQ
What is the clamping voltage of MV1N8177US/TR at its rated peak impulse current?
The MV1N8177US/TR has a maximum clamping voltage (VC) of 168 V when subjected to a 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and ensures protected circuits remain below their absolute maximum voltage ratings during surge events. The MV1N8177US/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient.
Is MV1N8177US/TR suitable for bidirectional transient protection?
No, MV1N8177US/TR is a unidirectional TVS. For bidirectional protection, two MV1N8177US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same VWM and clamping characteristics in both polarities.
Does MV1N8177US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MV1N8177US/TR provides ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4, as confirmed in the Applications/Benefits section of the official datasheet. Its 4 pF capacitance and fast response time enable effective suppression of contact and air-discharge events up to ±15 kV, making it suitable for high-integrity interface protection.
What does the "MV" prefix indicate in MV1N8177US/TR?
The "MV" prefix in MV1N8177US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, including extended temperature testing, lot traceability, and enhanced screening for space and defense applications. It distinguishes this variant from commercial (blank), JAN (MQ), or JANTX (MX) versions of the same 1N8177US base part.
Can MV1N8177US/TR be used in radiation-intensive environments?
Yes, MV1N8177US/TR is inherently radiation-hardened as described in Microsemi MicroNote 050. Its hermetic glass package, Category 1 metallurgical bonds, and silicon process design provide tolerance to total ionizing dose (TID) and single-event effects (SEE), enabling deployment in satellite, nuclear, and high-altitude avionics systems without derating.
MV1N8177US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 168V
- Current - Peak Pulse (10/1000µs):
- 890mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8177US/TR FAQ
1.How can I place an order for MV1N8177US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8177US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8177US/TR reliable?
The price and inventory of MV1N8177US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8177US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8177US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8177US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8177US/TR?
MV1N8177US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8177US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8177US/TR?
For technical support, including MV1N8177US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8177US/TR requirements.
6.How does Aetrix verify that MV1N8177US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8177US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8177US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8177US/TR?
All MV1N8177US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8177US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8177US/TR part is unused and in its original packaging.
Return procedure for MV1N8177US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8177US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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