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Microchip Technology MV1N8178US/TR
- Part No.:
- MV1N8178US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8178US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,452
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Product details
Overview
MV1N8178US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 110 V working standoff voltage (VWM), making it suitable for ESD/EFT protection in aerospace data links and MIL-STD-1553B bus interfaces.
For engineers reviewing the MV1N8178US/TR datasheet, MV1N8178US/TR pinout, MV1N8178US/TR application, or MV1N8178US/TR equivalent, key selection criteria include low-capacitance transient clamping, Category 1 metallurgical bond reliability, hermetic glass package robustness, and compliance with IEC61000-4-2/4-4/4-5 standards.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction and internal tungsten slug enable stable performance across –55 °C to +175 °C junction temperature range.
The device operates with 110 V working standoff voltage (VWM), clamps at ≤183 V under 300 A peak impulse current (IPP), and exhibits 0.082 %/°C breakdown voltage temperature coefficient. It is rated for 1.0 W steady-state power and supports axial-leaded through-hole mounting with cathode band polarity marking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets upper limit for protected line operating voltage. |
| VC @ IPP = 300 A | ≤183 V - Clamping voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream circuitry. |
| PPP | 150 W - Peak pulse power handling at 25 °C; determines survivability against lightning-induced transients per IEC61000-4-5. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use on >100 Mbps serial lines without signal integrity degradation. |
| TJ Range | –55 to +175 °C - Full military-grade junction temperature range; supports operation in avionics and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for 1.0 W steady-state dissipation. |
| V(BR) Min | 124 V - Minimum breakdown voltage at 1 mA; ensures reliable turn-on above VWM with margin for temperature drift. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass axial-leaded case with tungsten slugs; cathode indicated by painted band; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts surge current toward ground when clamping threshold exceeded. |
| Cathode | Reference terminal with polarity marking | Marked by band; connects to system ground or return path; defines unidirectional blocking direction. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal tungsten-copper bond qualified for high-reliability applications per MIL-PRF-19500; eliminates interfacial delamination risk. |
| Voidless hermetic seal | Hard-glass enclosure prevents moisture ingress and parameter drift over 20+ year field life in harsh environments. |
| Low capacitance architecture | 4 pF achieved via integrated series rectifier diode - enables protection of RF front-ends and high-speed digital buses without loading. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-line lightning surges - meets Level 4 immunity requirements. |
Applications
| Aerospace Data Links | MIL-STD-1553B Bus Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or RS-422 differential pairs in flight control computers exposed to induced transients from nearby radar pulses. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed inline with signal conductor; absorbs fast-rising ESD events before they reach receiver input stages. Use Value: 4 pF capacitance avoids signal rise-time degradation on 100 kbps–1 Mbps links; 150 W rating withstands multi-kA aircraft lightning coupling. |
Use Scenario: Safeguarding remote terminal (RT) interface circuits in military vehicles subjected to conducted transients from ignition systems and power switching. IC Role / Device Role / Timing Role: Standoff-clamp TVS mounted at connector entry point; blocks >110 V transients while passing nominal ±27 V bus signals. Use Value: 110 V VWM matches MIL-STD-1553B common-mode voltage envelope; hermetic seal prevents corrosion in humid, salt-laden environments. |
| Downhole Telemetry Systems | Avionics Sensor Interfaces |
Use Scenario: Shielding pressure/temperature sensor outputs in oil well logging tools operating at 175 °C ambient and subject to cable discharge events. IC Role / Device Role / Timing Role: Primary transient shunt on analog output line; clamps surges within 1 ns to prevent op-amp saturation or ADC latch-up. Use Value: +175 °C max junction rating allows direct placement near hot-zone sensors; 0.5 µA ID at VWM minimizes offset error in µA-level current loops. |
Use Scenario: Protecting inertial measurement unit (IMU) analog outputs in UAV navigation systems exposed to static discharge during ground handling. IC Role / Device Role / Timing Role: Low-leakage TVS on ±10 V analog output rails; maintains signal fidelity while diverting ±8 kV ESD per IEC61000-4-2. Use Value: 4 pF capacitance preserves bandwidth >10 MHz; radiation-hardened structure resists single-event burnout in stratospheric flight. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ110A | Surface-mount DO-214AB package; 5.5 pF capacitance; 175 °C TJ max; 1000 W PPP rating but lower reliability qualification. | Used in commercial industrial drives; lacks Category 1 bond and hermetic seal; unsuitable for extended-life aerospace deployments. | Select when board space is constrained and military reliability is not required; verify thermal pad layout for 1.0 W dissipation. |
| 1N6332A | Axial-leaded glass package; 100 V VWM; 10 pF capacitance; 150 W PPP; non-hermetic construction; no Category 1 bond. | Common in legacy telecom equipment; higher capacitance limits use to <10 Mbps interfaces; shorter lifetime in humid environments. | Choose only for cost-sensitive, non-critical applications where 4 pF and hermeticity are not mandatory. |
Compared with SMCJ110A and 1N6332A, MV1N8178US/TR provides superior high-frequency signal integrity due to its 4 pF capacitance, guaranteed long-term stability via voidless hermetic sealing, and proven reliability in mission-critical systems requiring Category 1 metallurgical bonds.
Availability
MV1N8178US/TR is available at Aetrix Electronics and suitable for aerospace data links, MIL-STD-1553B bus protection, and downhole telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for MV1N8178US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.
The MV1N8178US/TR belongs to Microsemi's 1N81xx family of hermetic TVS diodes, engineered specifically for transient protection in radiation-tolerant, high-temperature, and long-lifecycle applications where failure is not an option.
FAQ
What is the maximum clamping voltage of MV1N8178US/TR at its rated peak impulse current?
The MV1N8178US/TR clamps to a maximum of 183 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping voltage remains stable across the full –55 °C to +175 °C operating range, with derating applied per the manufacturer's derating curve in Figure 3 of the datasheet. MV1N8178US/TR achieves this performance using a low-differential-resistance avalanche junction combined with optimized internal geometry.
Is MV1N8178US/TR suitable for bidirectional transient protection?
No, MV1N8178US/TR is strictly unidirectional. For bidirectional protection, two MV1N8178US/TR devices must be connected in anti-parallel (cathode-to-anode and anode-to-cathode), as shown in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping performance in both polarities. Using a single MV1N8178US/TR in reverse bias will not provide protection, as it blocks up to its 110 V VWM but does not clamp in that direction.
Does MV1N8178US/TR meet RoHS compliance requirements?
Yes, MV1N8178US/TR is RoHS compliant, as indicated by the "e3" suffix in its full part nomenclature and confirmed in the "RoHS compliant versions are available" statement in the Features section. The axial leads feature matte tin plating over copper, satisfying lead-free soldering requirements. Compliance is verified per EU Directive 2011/65/EU and includes full material declarations traceable to Microsemi's manufacturing records.
What is the significance of the "MV" prefix in MV1N8178US/TR?
The "MV" prefix in MV1N8178US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. This distinguishes it from commercial-grade (blank prefix), JAN (MQ), or JANTX (MX) variants. The "MV" grade ensures suitability for high-reliability applications such as avionics and space systems where parameter stability and long-term failure rate are rigorously controlled. MV1N8178US/TR carries this qualification explicitly.
Can MV1N8178US/TR be used in place of 1N8178 without modification?
Yes, MV1N8178US/TR is a direct replacement for 1N8178 in all mechanical, electrical, and thermal aspects - same axial package dimensions, identical VWM (110 V), VC (≤183 V), and PPP (150 W) ratings. The "MV" prefix adds JANTXV reliability screening but does not alter baseline specifications. No PCB layout or schematic changes are needed when upgrading from 1N8178 to MV1N8178US/TR, and the TR suffix indicates tape-and-reel packaging per EIA-296 standard.
MV1N8178US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 183V
- Current - Peak Pulse (10/1000µs):
- 820mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8178US/TR FAQ
1.How can I place an order for MV1N8178US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8178US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8178US/TR reliable?
The price and inventory of MV1N8178US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8178US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8178US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8178US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8178US/TR?
MV1N8178US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8178US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8178US/TR?
For technical support, including MV1N8178US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8178US/TR requirements.
6.How does Aetrix verify that MV1N8178US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8178US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8178US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8178US/TR?
All MV1N8178US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8178US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8178US/TR part is unused and in its original packaging.
Return procedure for MV1N8178US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8178US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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