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Microchip Technology MV1N8179US/TR
- Part No.:
- MV1N8179US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8179US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,635
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Product details
Overview
MV1N8179US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 138 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MV1N8179US/TR datasheet, MV1N8179US/TR pinout, MV1N8179US/TR application, or MV1N8179US/TR equivalent, key selection criteria include clamping voltage (208 V), surge current rating (300 A), low ESD-sensitive leakage (<0.5 µA), and hermetic glass package suitability for harsh-environment signal line protection.
Technical Context
This TVS uses a unique dual-element structure: a Zener-like avalanche junction in series with a reverse-oriented rectifier diode to achieve 4 pF total capacitance-lowest among 150 W-rated TVS devices. Its unidirectional configuration provides precise clamping only during positive transients relative to cathode.
Rated for -55°C to +175°C junction temperature, it delivers stable performance under thermal stress with 0.108 %/°C breakdown voltage temperature coefficient and meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 138 V - Maximum continuous reverse-biased operating voltage before conduction begins. |
| V(BR) min | 152 V - Minimum breakdown voltage at 1 mA test current; ensures reliable turn-on above system operating voltage. |
| VC @ IPP | 208 V - Clamping voltage at 300 A peak impulse; defines worst-case voltage seen by protected circuitry. |
| PPP | 150 W - Peak pulse power handling at 10/1000 µs waveform; supports MIL-STD-1275 and DO-160 lightning surge events. |
| CT | 4 pF - Total capacitance at 0 V; enables use on >1 GHz RF lines and high-speed data interfaces without signal degradation. |
| ID @ VWM | 0.5 µA - Standby leakage current at rated standoff voltage; minimizes power loss in battery-powered systems. |
| TJ Range | -55°C to +175°C - Full military-grade temperature operation; validated for space-grade thermal cycling and radiation-hardened environments. |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs, RoHS-compliant matte tin plating over copper leads, cathode band marking, ~340 mg weight. Complies with EIA-296 tape-and-reel standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal during normal reverse bias | Connected to protected signal line; blocks DC up to 138 V and conducts only during overvoltage transients. |
| Cathode | Negative terminal; marked with band | Connected to ground or common reference; establishes unidirectional clamping path for positive-going surges. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Prevents moisture ingress and long-term parameter drift in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-STD-750 Method 2035 for mission-critical reliability in aerospace systems. |
| Triple-layer passivation | Enhances surface stability and reduces leakage current drift under UV, humidity, and thermal stress. |
| Low-impedance surge path | Clamps 300 A transients within 1 ns, limiting voltage overshoot to ≤208 V for sub-10 ns rise-time threats. |
| Radiation hardness | Inherently resistant to total ionizing dose (TID) per Microsemi MicroNote 050; suitable for LEO satellite bus protection. |
Applications
| Aerospace Avionics Data Bus Protection | Military Radar Front-End RF Line Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients and ESD events in airborne platforms. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and chassis ground to clamp positive surges while preserving signal integrity. Use Value: 4 pF capacitance avoids signal distortion on 1 Mbps differential buses; 208 V clamping ensures downstream receiver ICs remain below absolute maximum ratings. | Use Scenario: Shielding L-band or S-band RF amplifier inputs from antenna-coupled ESD and nearby lightning-induced surges. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at RF connector interface to minimize stub length and preserve VSWR. Use Value: 4 pF capacitance maintains impedance match up to 3 GHz; hermetic glass package prevents outgassing in vacuum-sealed radar modules. |
| Satellite Power Distribution Monitoring | High-Reliability Industrial Control Signal Isolation |
Use Scenario: Safeguarding telemetry sensor inputs on CubeSat power management units exposed to solar particle events and TID. IC Role / Device Role / Timing Role: TVS on analog monitoring lines (e.g., current sense, voltage feedback) to prevent latch-up or burnout during single-event transients. Use Value: Radiation-hardened construction eliminates need for derating; 175°C max junction temperature supports operation near power converters. | Use Scenario: Protecting isolated analog inputs (4–20 mA, 0–10 V) in nuclear plant control cabinets from ground potential rise and switching surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on field-side signal terminals before isolation barrier. Use Value: 150 W surge rating handles 2 kV/1 kA IEC61000-4-5 Level 4 surges; hermetic seal resists chemical corrosion in humid containment zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ130A | Surface-mount SMC package; 130 V VWM; 400 W PPP; 15 pF capacitance | Higher capacitance limits use to <100 MHz signals; not hermetically sealed or radiation-hardened | Select when board space is constrained and radiation tolerance is not required. |
| 1N6372 | Axial-leaded glass package; 130 V VWM; 150 W PPP; 10 pF capacitance; no Category 1 bond | Lacks triple-layer passivation and metallurgical qualification for flight hardware | Acceptable for commercial industrial use where full MIL-PRF-19500 compliance is not mandated. |
Compared with SMCJ130A and 1N6372, MV1N8179US/TR uniquely combines 4 pF capacitance, hermetic sealing, Category 1 bonding, and radiation hardness-making it the only option qualified for spacecraft telemetry and avionics signal line protection without design compromise.
Availability
MV1N8179US/TR is available at Aetrix Electronics and suitable for aerospace avionics, satellite telemetry, military radar front-ends, and nuclear-grade industrial control systems requiring stable component supply across extended product lifecycles.
Supply support for MV1N8179US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and hermetically sealed components.
The MV1N8179US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for mission-critical transient protection in environments where failure is not an option.
FAQ
What is the clamping voltage of MV1N8179US/TR at its rated peak surge current?
The MV1N8179US/TR has a maximum clamping voltage (VC) of 208 V at 300 A peak impulse current (IPP) under the 10/1000 µs waveform condition. This value is measured per MIL-STD-883 Method 3015 and guarantees that protected circuitry will not experience voltages exceeding 208 V during standardized surge events. The MV1N8179US/TR achieves this with minimal voltage overshoot due to its low dynamic impedance and fast response time.
Is MV1N8179US/TR suitable for bidirectional transient protection?
No, MV1N8179US/TR is strictly unidirectional. For bidirectional protection, two MV1N8179US/TR devices must be connected in anti-parallel per Figure 5 of the datasheet, resulting in doubled capacitance (8 pF). This configuration preserves the low-capacitance advantage while enabling symmetrical clamping for AC-coupled or floating signal lines.
Does MV1N8179US/TR meet RoHS requirements?
Yes, MV1N8179US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. It uses matte tin plating over copper leads and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE substances above threshold limits. Compliance is verified per JEDEC J-STD-609A and tested per IEC 62321.
What is the thermal resistance of MV1N8179US/TR, and how does it affect power dissipation?
The thermal resistance junction-to-ambient (RθJA) of MV1N8179US/TR is 150 °C/W. At 25 °C ambient, this allows 1.0 W steady-state power dissipation before reaching the 175 °C maximum junction temperature. In practice, the device is used for short-duration transients (not continuous power), so RθJA primarily informs PCB layout-minimum copper area and via count should be designed to maintain safe thermal margins during repetitive surge events.
How is the "MV" prefix in MV1N8179US/TR interpreted per Microsemi's nomenclature?
The "MV" prefix in MV1N8179US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500/505, including extended temperature screening (-55°C to +175°C), 100% lot testing, and enhanced quality assurance. It distinguishes this variant from commercial (blank), JAN (MQ), or JANTX (MX) versions, confirming suitability for spaceflight and critical defense systems where zero defect tolerance applies. The MV1N8179US/TR is fully traceable to wafer lot and assembly batch.
MV1N8179US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 120V
- Voltage - Breakdown (Min):
- 138V
- Voltage - Clamping (Max) @ Ipp:
- 208V
- Current - Peak Pulse (10/1000µs):
- 720mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8179US/TR FAQ
1.How can I place an order for MV1N8179US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8179US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8179US/TR reliable?
The price and inventory of MV1N8179US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8179US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8179US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8179US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8179US/TR?
MV1N8179US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8179US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8179US/TR?
For technical support, including MV1N8179US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8179US/TR requirements.
6.How does Aetrix verify that MV1N8179US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8179US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8179US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8179US/TR?
All MV1N8179US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8179US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8179US/TR part is unused and in its original packaging.
Return procedure for MV1N8179US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8179US/TR Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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