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Microchip Technology MV1N8180US/TR
- Part No.:
- MV1N8180US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8180US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,542
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Product details
Overview
MV1N8180US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 150 W peak pulse power, 4 pF capacitance, and 130 V working standoff voltage (VWM), designed for high-reliability ESD/EFT protection in aerospace, defense, and industrial control signal lines.
For engineers reviewing the MV1N8180US/TR datasheet, MV1N8180US/TR pinout, MV1N8180US/TR application, or MV1N8180US/TR equivalent, this part delivers ultra-low capacitance TVS protection with Category 1 metallurgical bonding, RoHS-compliant MELF surface-mount packaging, and IEC61000-4-2/4-4 compliance - critical for high-frequency analog interfaces and MIL-STD-750 qualified designs.
Technical Context
This device integrates a series-opposed rectifier diode to achieve 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction ensures zero voids and supports operation from −55 °C to +175 °C junction temperature.
The MV1N8180US/TR exhibits 208 V maximum clamping voltage (VC) at 300 A peak impulse current (IPP), with 0.5 µA standby current at 130 V VWM and a breakdown voltage of 152 V minimum at 1 mA test current - enabling precise overvoltage thresholding in sensitive RF front-ends and data acquisition systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPP) | 150 W at 10/1000 µs waveform - sustains single-event lightning surges without degradation in telecom line cards. |
| Working Standoff Voltage (VWM) | 130 V DC - blocks normal operating voltage while triggering only above 152 V breakdown threshold. |
| Clamping Voltage (VC) | 208 V at 300 A IPP - limits transient-induced voltage overshoot to safe levels for downstream 130 V-rated ICs. |
| Total Capacitance (CT) | 4 pF at 0 V - preserves signal integrity in >1 GHz RF paths and high-speed serial links (e.g., RS-485, CAN FD). |
| Surge Current (IPP) | 300 A peak - handles IEC61000-4-5 Level 3 (1 kV/2 Ω) secondary lightning transients. |
| Junction Temperature Range | −55 °C to +175 °C - enables deployment in engine control units, downhole tools, and space-grade avionics. |
| Leakage Current (ID) | 0.5 µA max at 130 V - avoids loading low-power sensor bias networks or precision reference circuits. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass MELF (A package), surface-mount, cathode-banded polarity, RoHS-compliant matte tin plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased during clamping) | Connected to protected line; conducts surge current to ground when voltage exceeds V(BR). |
| Cathode | Reference terminal (marked with band) | Typically tied to system ground or common return; defines unidirectional clamping polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal tungsten-slug interconnect enabling MIL-PRF-19500/510 qualified reliability for space and nuclear applications. |
| Triple-layer passivation | Hermetic glass encapsulation with no internal voids - eliminates moisture ingress and parametric drift over 20+ year lifetimes. |
| Low-capacitance architecture | Series-opposed rectifier diode reduces CT to 4 pF without sacrificing clamping speed or PPP rating. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for satellite telemetry and reactor instrumentation. |
Applications
| Avionics Data Bus Protection | Downhole Sensor Interface |
|---|---|
|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients in aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS placed across receiver inputs to clamp surges before they reach input ESD structures. Use Value: 4 pF capacitance prevents signal rise-time degradation on 1 Mbps buses; 208 V VC ensures receiver ICs remain below absolute maximum ratings. |
Use Scenario: Shielding piezoresistive pressure transducers in oil/gas wellhead controllers exposed to electrostatic discharge during maintenance. IC Role / Device Role / Timing Role: Standoff-protection element on 4–20 mA loop inputs, absorbing ESD per IEC61000-4-2 Level 4 (15 kV air). Use Value: 0.5 µA leakage avoids offset errors in µA-level loop current sensing; −55 °C to +175 °C range matches downhole thermal profiles. |
| Satellite Telemetry Front-End | Industrial Ethernet PHY Protection |
|
Use Scenario: Safeguarding S-band telemetry receivers against single-event transients in LEO orbit environments. IC Role / Device Role / Timing Role: Input-stage transient suppressor on RF amplifier bias lines and IF signal paths. Use Value: Radiation-hardened construction eliminates latch-up risk; 150 W PPP withstands cosmic-ray-induced surges without parameter shift. |
Use Scenario: Securing 100BASE-TX Ethernet PHY differential pairs in factory automation gateways subjected to cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS across MDI pins to suppress ESD without distorting 100 MHz signaling eye diagrams. Use Value: 4 pF CT maintains >30 dB return loss up to 200 MHz; 130 V VWM accommodates PoE+ (57 V) plus margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ130A | 1500 W PPP, 100 pF CT, DO-214AB package, 130 V VWM | Higher capacitance limits use in >100 MHz systems; suited for power rail protection, not signal lines. | Select when surge energy exceeds 150 W but signal bandwidth < 10 MHz. |
| TPSMA6L130A | 600 W PPP, 20 pF CT, SMA package, 130 V VWM, AEC-Q101 qualified | Lacks Category 1 bonding and radiation tolerance; rated only to +150 °C junction. | Prefer for automotive infotainment where cost and AEC-Q101 matter more than space-grade reliability. |
Compared with SMCJ130A and TPSMA6L130A, the MV1N8180US/TR uniquely combines 4 pF capacitance, 150 W PPP, and hermetic Category 1 construction - making it irreplaceable for high-frequency, high-reliability signal-line protection where long-term parametric stability and radiation immunity are mandatory.
Availability
MV1N8180US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, downhole sensor interface, and satellite telemetry front-end applications requiring stable component supply across extended product lifecycles.
Supply support for MV1N8180US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The MV1N8180US/TR belongs to Microsemi's 1N8149–1N8182 family of hermetic low-capacitance TVS diodes, engineered specifically for mission-critical ESD/EFT protection in environments where failure is not an option.
FAQ
What is the maximum clamping voltage of MV1N8180US/TR at its rated surge current?
The MV1N8180US/TR has a maximum clamping voltage (VC) of 208 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed per the manufacturer's electrical characteristics table and ensures downstream circuitry remains within safe operating limits during transient events. The MV1N8180US/TR achieves this clamping performance while maintaining only 4 pF capacitance - a key differentiator versus higher-capacitance alternatives.
Is MV1N8180US/TR RoHS compliant?
Yes, MV1N8180US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature per Microsemi's part numbering convention. The device uses matte tin plating over copper leads and meets Directive 2011/65/EU requirements. This compliance is confirmed in the "Features" section of the official datasheet and applies to all units shipped under this part number.
What does the "MV" prefix signify in MV1N8180US/TR?
The "MV" prefix in MV1N8180US/TR denotes JANTXV-level reliability qualification per MIL-PRF-19500/510, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. This distinguishes MV1N8180US/TR from commercial-grade variants (blank prefix) and lower-tier military grades (MQ, MX, MS). The MV grade is required for flight-critical and nuclear instrumentation applications.
Can MV1N8180US/TR be used for bidirectional transient protection?
No, MV1N8180US/TR is strictly unidirectional. Bidirectional protection requires two MV1N8180US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping performance per polarity - a necessary trade-off when protecting AC-coupled or differential signal paths.
What is the thermal resistance junction-to-ambient for MV1N8180US/TR?
The thermal resistance junction-to-ambient (RθJA) of MV1N8180US/TR is 150 °C/W, measured under standard PCB mounting conditions. This value reflects the device's hard-glass MELF package with internal tungsten slugs and informs derating calculations - for example, at 75 °C ambient, maximum steady-state power must be reduced to ~0.5 W to maintain TJ ≤ 175 °C. The RθJA is specified in the "Maximum Ratings" table on page 1 of the datasheet.
MV1N8180US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 130V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 225V
- Current - Peak Pulse (10/1000µs):
- 670mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8180US/TR FAQ
1.How can I place an order for MV1N8180US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8180US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8180US/TR reliable?
The price and inventory of MV1N8180US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8180US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8180US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8180US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8180US/TR?
MV1N8180US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8180US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8180US/TR?
For technical support, including MV1N8180US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8180US/TR requirements.
6.How does Aetrix verify that MV1N8180US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8180US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8180US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8180US/TR?
All MV1N8180US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8180US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8180US/TR part is unused and in its original packaging.
Return procedure for MV1N8180US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8180US/TR Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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