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Microchip Technology MV1N8181US/TR
- Part No.:
- MV1N8181US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8181US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,547
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Product details
Overview
MV1N8181US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a working standoff voltage of 150 V - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750 qualified systems.
For engineers reviewing the MV1N8181US/TR datasheet, MV1N8181US/TR pinout, MV1N8181US/TR application, or MV1N8181US/TR equivalent, this device offers verified low-capacitance clamping, Category 1 metallurgical bonding, RoHS-compliant axial-leaded packaging, and IEC61000-4-2/4-4 compliance without requiring layout redesign for legacy through-hole interfaces.
Technical Context
This TVS integrates a series-opposed rectifier diode to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package enables operation from –55 °C to +175 °C with 150 W surge capability at 25 °C ambient.
The device exhibits 261 V maximum clamping voltage at 300 A peak impulse current (IPP), with 0.5 µA standby leakage at 150 V standoff and ±0.108 %/°C breakdown voltage temperature coefficient - confirming stable performance across extended thermal ranges in mission-critical analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 150 W at 10/1000 µs - sustains lightning-induced surges per IEC61000-4-5 Level 3 without degradation. |
| Capacitance | 4 pF at 0 V - preserves signal integrity up to >1 GHz in RF receiver inputs and high-speed serial lines. |
| Working Standoff Voltage | 150 V - supports continuous DC bias on industrial sensor buses and avionics power rails. |
| Clamping Voltage | 261 V at 300 A IPP - limits transient overvoltage to safe levels for downstream 200 V-rated ICs. |
| Breakdown Voltage | 171–190 V at 1 mA - ensures reliable triggering margin above 150 V operating voltage. |
| Leakage Current | 0.5 µA max at 150 V - avoids loading precision reference or low-power wake-up circuits. |
| Junction Temp Range | –55 °C to +175 °C - qualified for engine control units and downhole instrumentation. |
Pinout & Package
Package: Axial-leaded, hermetically sealed voidless hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased during clamping) | Connected to protected signal line; conducts surge current toward ground when VWM exceeded. |
| Cathode | Reference terminal (marked with band) | Connected to system ground or common return; defines polarity and clamping threshold direction. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Enables qualification to MIL-PRF-19500/507 and JANTXV reliability standards for space-grade use. |
| Triple-layer passivation | Prevents moisture ingress and surface conduction under high-humidity, high-bias stress conditions. |
| Voidless hermetic seal | Eliminates internal delamination risk during thermal cycling - critical for 20+ year field deployments. |
| Nonsensitive to ESD | Withstands >30 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 for total ionizing dose (TID) up to 100 krad(Si). |
Applications
| Avionics Data Bus Protection | Downhole Sensor Interface |
|---|---|
Use Scenario: Protecting ARINC 429 receive lines from induced transients during lightning strikes near aircraft fuselage. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between differential receiver input and chassis ground. Use Value: 4 pF capacitance prevents signal rise-time degradation; 261 V clamping ensures receiver ICs rated for 300 V survive worst-case surges. |
Use Scenario: Shielding pressure/temperature sensor outputs in oil-well logging tools exposed to ESD and switching noise. IC Role / Device Role / Timing Role: Standoff-protection element on 4–20 mA loop analog output before isolation barrier. Use Value: 175 °C junction rating allows direct mounting near hot-zone electronics; 0.5 µA leakage avoids loop-current error. |
| Military Radio Front-End | Satellite Telemetry Link |
Use Scenario: Guarding HF/VHF antenna coupling networks against EMP and nearby RF amplifier switching spikes. IC Role / Device Role / Timing Role: Low-capacitance shunt clamp on transmit/receive signal path prior to LNA input. Use Value: 4 pF capacitance maintains impedance match and gain flatness up to 500 MHz; 150 W rating handles multi-pulse threats. |
Use Scenario: Securing S-band telemetry receiver inputs aboard LEO satellites subject to single-event transients and launch vibration. IC Role / Device Role / Timing Role: Radiation-hardened transient suppressor on downlink RF signal path before mixer stage. Use Value: Inherent TID tolerance eliminates need for shielding mass; hermetic seal prevents outgassing in vacuum. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ150A | Surface-mount DO-214AB package; 100 W PPP; 120 pF capacitance; 167 V clamping at 100 A IPP. | Not suitable for >100 MHz signal paths; requires PCB rework for SMT transition; lower surge endurance. | Select only if board space constraints prohibit axial-leaded devices and RF bandwidth < 100 MHz. |
| 1N6317 | Hermetic glass axial package; 150 W PPP; 10 pF capacitance; 230 V clamping at 300 A IPP; no Category 1 bond. | Lacks radiation hardness and MIL-PRF-19500 qualification; higher capacitance degrades >500 MHz signals. | Acceptable for commercial-grade industrial controls where radiation and long-term hermeticity are not required. |
Compared with SMCJ150A and 1N6317, MV1N8181US/TR uniquely combines 4 pF capacitance, 150 W surge rating, Category 1 metallurgical bonding, and inherent radiation hardness - making it the sole option for high-frequency, high-reliability, space-qualified transient suppression.
Availability
MV1N8181US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, downhole sensor interface, and military radio front-end applications requiring stable component supply, long-lifecycle support, and traceable hermetic sourcing.
Supply support for MV1N8181US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
MV1N8181US/TR belongs to the 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for ESD/EFT protection in high-frequency, high-reliability systems where failure is not an option.
FAQ
What is the clamping voltage of MV1N8181US/TR at its rated peak impulse current?
The MV1N8181US/TR has a maximum clamping voltage (VC) of 261 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per IEC61000-4-5 test conditions and ensures protected circuitry remains within safe operating limits during surge events. The MV1N8181US/TR achieves this while maintaining only 4 pF capacitance - a key differentiator for high-speed signal lines.
Is MV1N8181US/TR compliant with RoHS and qualified for high-reliability applications?
Yes, MV1N8181US/TR is RoHS compliant (e3 marking) and qualified to MIL-PRF-19500/507 as a JANTXV-grade device. Its Category 1 internal metallurgical bond, voidless hermetic glass construction, and triple-layer passivation meet stringent requirements for aerospace, defense, and downhole applications. The MV1N8181US/TR also demonstrates inherent radiation hardness per Microsemi MicroNote 050.
Can MV1N8181US/TR be used for bidirectional transient protection?
No - MV1N8181US/TR is unidirectional. For bidirectional protection, two MV1N8181US/TR devices must be connected in anti-parallel, as documented in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping performance and reliability attributes of the individual MV1N8181US/TR units.
What is the thermal resistance and steady-state power rating of MV1N8181US/TR?
The MV1N8181US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W and a steady-state average power rating (PM(AV)) of 1.0 W at 25 °C ambient. These values assume adequate PCB thermal management; exceeding the 175 °C maximum junction temperature will compromise long-term reliability. The MV1N8181US/TR is optimized for transient, not continuous, power dissipation.
Does MV1N8181US/TR require derating at elevated ambient temperatures?
Yes - MV1N8181US/TR must be derated linearly above 25 °C ambient per the Figure 3 derating curve in the datasheet. At 100 °C ambient, its peak pulse power drops to approximately 75 W (50% of rated 150 W). This derating ensures junction temperature remains below 175 °C during surge events. The MV1N8181US/TR's wide –55 °C to +175 °C operating range supports deployment in extreme environments when properly derated.
MV1N8181US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 261V
- Current - Peak Pulse (10/1000µs):
- 570mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8181US/TR FAQ
1.How can I place an order for MV1N8181US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8181US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8181US/TR reliable?
The price and inventory of MV1N8181US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8181US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8181US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8181US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8181US/TR?
MV1N8181US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8181US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8181US/TR?
For technical support, including MV1N8181US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8181US/TR requirements.
6.How does Aetrix verify that MV1N8181US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8181US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8181US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8181US/TR?
All MV1N8181US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8181US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8181US/TR part is unused and in its original packaging.
Return procedure for MV1N8181US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8181US/TR Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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