My Inquiry
My Account
Microchip Technology MV1N8182US/TR
- Part No.:
- MV1N8182US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MV1N8182US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,383
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MV1N8182US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 150 V working standoff voltage (VWM) with 261 V maximum clamping voltage (VC) at 300 A IPP.
For engineers reviewing the MV1N8182US/TR datasheet, MV1N8182US/TR pinout, MV1N8182US/TR application, or MV1N8182US/TR equivalent, key selection criteria include low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, Category 1 metallurgical bonding for radiation-hardened environments, and axial-leaded through-hole mounting compatibility with MIL-STD-750 ESD robustness.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional surge suppression. Its hard-glass hermetic package enables operation from –55 °C to +175 °C junction temperature, with thermal resistance of 150 °C/W.
The device operates with 0.5 µA standby current at 150 V VWM and exhibits a 0.108 %/°C breakdown voltage temperature coefficient. It meets secondary lightning protection per select IEC61000-4-5 levels and supports ESD immunity per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 150 V - Maximum continuous reverse standoff voltage before conduction begins; defines operating voltage margin for protected circuits. |
| VC @ IPP | 261 V @ 300 A - Clamping voltage during 10/1000 µs surge; limits transient energy delivered to downstream ICs. |
| PPP | 150 W - Peak pulse power rating at 25 °C; determines survivability under standardized lightning/surge waveforms. |
| CT | 4 pF - Total capacitance at 0 V; enables use on >1 GHz RF lines and high-speed data interfaces without signal degradation. |
| ID | 0.5 µA - Standby leakage at rated VWM; ensures minimal DC loading on sensitive analog or reference nodes. |
| TJ Range | –55 to +175 °C - Junction temperature range; supports deployment in aerospace, downhole, and military embedded systems. |
| αV(BR) | 0.108 %/°C - Breakdown voltage drift with temperature; critical for precision overtemperature design margins. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-biased clamping | Connected to protected line; conducts surge current to ground when VWM exceeded. |
| Cathode | Reference terminal / clamping voltage reference | Connected to system ground or common return; establishes polarity and defines clamping threshold. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Enables qualification for high-reliability aerospace and defense applications per MIL-PRF-19500 requirements. |
| Triple-layer passivation | Prevents moisture ingress and surface leakage in humid or corrosive environments, extending field lifetime. |
| Voidless hermetic seal | Eliminates internal delamination risk under thermal cycling, ensuring long-term parameter stability. |
| Nonsensitive to ESD (MIL-STD-750) | Withstands handling without pre-failure, reducing manufacturing yield loss in ESD-sensitive assembly lines. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050; suitable for space-grade and nuclear instrumentation applications. |
Applications
| RF Front-End Protection | Avionics Data Bus Lines |
|---|---|
Use Scenario: Protecting L-band radar receiver inputs from induced transients during lightning strikes or antenna coupling. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at SMA connector feedthrough to limit voltage excursion below 261 V. Use Value: 4 pF capacitance preserves S11 < –15 dB up to 2.5 GHz; 150 W rating handles IEC61000-4-5 Level 3 surges without degradation. | Use Scenario: Safeguarding ARINC 429 receive lines in flight control computers against ESD and switching noise. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential pair inputs, leveraging 150 V VWM to match bus common-mode range. Use Value: 0.5 µA ID prevents signal distortion on 100 kΩ input impedance receivers; Category 1 bond ensures DO-160 Section 22 compliance. |
| Downhole Telemetry Interfaces | Military Power Supply Inputs |
Use Scenario: Transient suppression on 24 V DC telemetry lines in oil/gas wellhead controllers exposed to motor switching noise. IC Role / Device Role / Timing Role: Primary protection stage before DC-DC converter input, mounted directly at PCB entry point. Use Value: –55 to +175 °C operation survives ambient wellbore temperatures; 300 A IPP withstands 1000 V/m conducted surges per IEC61000-4-4. | Use Scenario: Input-stage surge protection for 28 V MIL-STD-704A compliant power supplies in ground vehicles. IC Role / Device Role / Timing Role: Unidirectional TVS across input rails to clamp load-dump and inductive kickback events. Use Value: 150 W PPP sustains repeated 12 V/200 ms load dump pulses; hermetic seal prevents failure in sand/dust environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ150A | Surface-mount SMC package; 4.5 pF capacitance; 1500 W PPP rating but higher VC (243 V @ 6.5 A). | Designed for automated SMT assembly; lower surge current density per unit area than axial-leaded MV1N8182US/TR. | Select for high-volume PCBs requiring reflow compatibility and smaller footprint; not suitable for high-temperature through-hole chassis mounts. |
| 1N6330 | Axial-leaded, same 150 V VWM, but 100 W PPP rating and 12 pF capacitance; non-hermetic epoxy package. | Lacks Category 1 bonding and radiation hardness; limited to commercial-temperature industrial use. | Choose for cost-sensitive non-mission-critical applications where 4 pF and –55 °C operation are not required. |
Compared with SMCJ150A and 1N6330, the MV1N8182US/TR uniquely combines hermetic reliability, ultra-low capacitance, and extended temperature capability-making it irreplaceable in aerospace RF front-ends and downhole telemetry where parameter drift or seal failure is unacceptable.
Availability
MV1N8182US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus lines, and downhole telemetry interfaces requiring stable component supply across extended temperature ranges and high-reliability certifications.
Supply support for MV1N8182US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and RF solutions for aerospace, defense, and industrial markets.
The MV1N8182US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option-including satellite communications, nuclear instrumentation, and military vehicle electronics.
FAQ
What is the clamping voltage of MV1N8182US/TR at its rated peak impulse current?
The MV1N8182US/TR has a maximum clamping voltage (VC) of 261 V when subjected to its rated peak impulse current (IPP) of 300 A under the standard 10/1000 µs waveform. This value is guaranteed per the manufacturer's electrical characteristics table and defines the upper voltage limit imposed on protected circuitry during surge events. The MV1N8182US/TR maintains this clamping performance across its full operating temperature range.
Is MV1N8182US/TR suitable for bidirectional transient protection?
No, MV1N8182US/TR is a unidirectional TVS diode. For bidirectional protection, two MV1N8182US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping in both polarities-required for AC-coupled or floating signal lines.
Does MV1N8182US/TR meet RoHS compliance requirements?
Yes, MV1N8182US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. Its axial leads feature matte tin plating over copper, and the hermetic glass package contains no lead or other restricted substances above EU RoHS thresholds. Full compliance documentation is available upon request from Aetrix Electronics.
What is the maximum steady-state power dissipation for MV1N8182US/TR at room temperature?
The MV1N8182US/TR has a maximum steady-state (average) power dissipation of 1.0 W at ambient temperature (TA) of 25 °C. This rating assumes adequate PCB thermal management to maintain junction temperature within the –55 to +175 °C range. Derating is required above 25 °C, following the curve in Figure 3 of the datasheet.
How does the Category 1 metallurgical bond in MV1N8182US/TR improve reliability?
The Category 1 metallurgical bond in MV1N8182US/TR refers to a qualified internal interconnect process meeting MIL-PRF-19500 stress-test requirements-including thermal shock, mechanical vibration, and humidity exposure. This bond eliminates interfacial voids and ensures long-term adhesion integrity under extreme environmental stress, directly enabling MV1N8182US/TR qualification for JANTXV-level reliability programs.
MV1N8182US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 170V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 294V
- Current - Peak Pulse (10/1000µs):
- 510mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MV1N8182US/TR FAQ
1.How can I place an order for MV1N8182US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MV1N8182US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MV1N8182US/TR reliable?
The price and inventory of MV1N8182US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MV1N8182US/TR is usually 5 days.
3.What payment methods are accepted for MV1N8182US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MV1N8182US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MV1N8182US/TR?
MV1N8182US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MV1N8182US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MV1N8182US/TR?
For technical support, including MV1N8182US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MV1N8182US/TR requirements.
6.How does Aetrix verify that MV1N8182US/TR is sourced from the original manufacturer or authorized distributors?
All MV1N8182US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MV1N8182US/TR meets industry standards.
7.What is the process for return or replacement of MV1N8182US/TR?
All MV1N8182US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MV1N8182US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MV1N8182US/TR part is unused and in its original packaging.
Return procedure for MV1N8182US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MV1N8182US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
