Microchip Technology MX1N8150US/TR

Overview

MX1N8150US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) with 4 pF capacitance, 7.5 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.

For engineers reviewing the MX1N8150US/TR datasheet, MX1N8150US/TR pinout, MX1N8150US/TR application, or MX1N8150US/TR equivalent, this device is selected for ESD/EFT protection in RF front-ends, MIL-STD-750-compliant systems, and radiation-hardened signal lines where low capacitance and hermetic reliability are mandatory.

Technical Context

The MX1N8150US/TR implements a unique dual-element structure: a TVS junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package eliminates voids and supports operation from –55 °C to +175 °C.

It delivers 11.1 A peak impulse current (IPP) at 13.5 V clamping voltage (VC) under 10/1000 µs waveform, with 0.5 µA standby current at 7.5 V VWM and ±0.068 %/°C breakdown voltage temperature coefficient. The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 lightning levels.

Key Specifications

Pinout & Package

MX1N8150US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMCJ7.0A and 1N6105A, MX1N8150US/TR uniquely combines 4 pF capacitance, hermetic reliability, and radiation tolerance-making it irreplaceable in RF-intensive, long-life, or mission-critical deployments where parameter stability over decades is non-negotiable.

Availability

MX1N8150US/TR is available at Aetrix Electronics and suitable for RF front-end protection, MIL-STD-750 test systems, spacecraft power bus monitoring, and high-voltage industrial sensor interfaces requiring stable component supply across extended product lifecycles.

Supply support for MX1N8150US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.

The 1N8149–1N8182 series was engineered specifically for defense, space, and critical infrastructure applications demanding hermetic sealing, ultra-low capacitance, and immunity to harsh environmental stressors-including thermal cycling, vibration, and ionizing radiation.

FAQ

What is the clamping voltage of MX1N8150US/TR at its rated peak surge current?

The MX1N8150US/TR has a maximum clamping voltage (VC) of 13.5 V at 11.1 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures sensitive downstream circuitry-such as RF LNAs or precision ADC references-remains within safe operating limits during transient events. The MX1N8150US/TR achieves this performance while maintaining only 4 pF capacitance, distinguishing it from higher-capacitance alternatives.

Does MX1N8150US/TR meet MIL-STD-750 ESD sensitivity requirements?

Yes, MX1N8150US/TR is explicitly rated as nonsensitive to ESD per MIL-STD-750 Method 1020. Its hermetic glass package and internal construction prevent parameter shift or failure after repeated electrostatic discharges. This makes MX1N8150US/TR suitable for use in ESD test fixtures and high-reliability systems where device-level ESD robustness must be guaranteed without external shielding-unlike commercial TVS diodes that degrade after exposure.

Is MX1N8150US/TR suitable for bidirectional transient protection?

No, MX1N8150US/TR is strictly unidirectional. For bidirectional protection, Microsemi specifies using two MX1N8150US/TR devices in anti-parallel configuration (anode-to-anode or cathode-to-cathode), as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but preserves low-clamp performance in both polarities-enabling use in AC-coupled or differential signal paths where polarity reversal occurs.

What is the thermal resistance and steady-state power limit of MX1N8150US/TR?

MX1N8150US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W and a maximum steady-state (average) power dissipation of 1.0 W at TA = 25 °C. This rating assumes adequate PCB copper area for heat spreading; exceeding 1.0 W continuously risks junction temperature exceeding 175 °C. The MX1N8150US/TR is optimized for transient suppression-not continuous power handling-so sustained dissipation should be minimized via proper system-level surge coordination.

How does the internal series rectifier diode in MX1N8150US/TR reduce capacitance?

The MX1N8150US/TR integrates a rectifier diode in series and opposite polarity to the TVS junction. This configuration forces the TVS junction to operate only in reverse breakdown during clamping, while the series diode blocks forward conduction and reduces effective junction area seen by AC signals-lowering total capacitance to 4 pF. This architecture is patented and distinct from conventional planar TVS structures, which typically exhibit ≥30 pF at comparable voltage ratings. The MX1N8150US/TR leverages this design to enable RF-transparent protection without sacrificing surge capability.