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Microchip Technology MX1N8151US/TR
- Part No.:
- MX1N8151US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8151US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,232
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Product details
Overview
MX1N8151US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 8.5 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MX1N8151US/TR datasheet, MX1N8151US/TR pinout, MX1N8151US/TR application, or MX1N8151US/TR equivalent, this device is selected for ESD/EFT protection in RF front-ends, high-speed data lines, and mission-critical systems requiring <10 µA standby current, sub-15 V clamping, and radiation-hardened construction per MicroNote 050.
Technical Context
This TVS uses a unique dual-element architecture: a low-capacitance Zener-based TVS core paired with a series-connected rectifier diode oriented opposite to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hermetic glass package eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device delivers 11.1 A peak impulse current (IPP) at 15.6 V clamping voltage (VC) under 10/1000 µs waveform, with 0.073 %/°C breakdown voltage temperature coefficient (αV(BR)). It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 lightning levels without derating up to 80 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 10 µA; sets upper limit for signal line DC bias compatibility. |
| VC @ IPP | 15.6 V @ 11.1 A - Clamping voltage during 10/1000 µs surge; ensures protected ICs see ≤15.6 V transient stress. |
| CT | 4 pF - Total capacitance at 0 V; enables use on >1 GHz RF paths and USB 2.0/3.0, HDMI, or Ethernet PHY lines without signal integrity loss. |
| PPP | 150 W - Peak pulse power rating at 25 °C; sustains single-event surges up to 11.1 A without degradation. |
| αV(BR) | 0.073 %/°C - Temperature coefficient of breakdown voltage; predicts <±1.1% V(BR) drift over –55 °C to +125 °C operating range. |
| RθJA | 150 °C/W - Junction-to-ambient thermal resistance; requires minimal PCB copper area for thermal management in sealed enclosures. |
| ID @ VWM | 10 µA - Standby leakage at rated standoff voltage; avoids loading of high-impedance sensor or reference circuits. |
Pinout & Package
MX1N8151US/TR is housed in an axial-leaded, voidless-hermetically-sealed hard-glass package with tungsten slugs and cathode band polarity marking. Leads are RoHS-compliant matte tin-plated copper. Weight: ~340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for transient energy absorption | Connected to protected line; conducts during positive transients when cathode is biased higher than anode. |
| Cathode | Output/reference terminal with polarity band | Marked by painted band; ties to system ground or common return; defines unidirectional conduction direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Meets MIL-STD-883 Class B requirements for die attach reliability; qualified for space-grade and nuclear instrumentation use. |
| Series rectifier + TVS topology | Enables 4 pF capacitance while maintaining 150 W surge rating - not achievable with standard planar or avalanche TVS structures. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) ≥100 krad(Si); validated per Microsemi MicroNote 050 for satellite payload designs. |
| Nonsensitive to ESD | Passes MIL-STD-750 Method 1020 handling without parameter shift; allows manual assembly without special grounding protocols. |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA inputs and mixer outputs in S-band radar transceivers against ESD and induced lightning transients. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at RF connector entry point before impedance-matching network. Use Value: 4 pF capacitance preserves VSWR <1.2:1 up to 3 GHz; 15.6 V clamping prevents LNA saturation or gate oxide rupture. |
Use Scenario: Safeguarding ARINC 429 receiver inputs in flight control computers exposed to aircraft static discharge and EMP. IC Role / Device Role / Timing Role: Primary transient suppressor on differential data line, mounted within 2 mm of connector footprint. Use Value: 11.1 A IPP handles 10/1000 µs coupling events per DO-160 Section 22 Level 3; hermetic seal prevents corrosion in humid cabin environments. |
| Satellite Telemetry Transmitter | Nuclear Instrumentation Signal Chain |
Use Scenario: Shielding 2.4 GHz telemetry uplink amplifiers from launch-stage electrostatic discharge and solar particle events. IC Role / Device Role / Timing Role: First-line transient guard on PA output stage, co-located with bias feedthrough. Use Value: Radiation hardness (≥100 krad) and –55 °C to +175 °C operation ensure uninterrupted downlink during orbital thermal cycling. |
Use Scenario: Protecting gamma spectrometer preamplifier inputs in reactor monitoring systems subject to neutron flux and gamma irradiation. IC Role / Device Role / Timing Role: Low-leakage (<10 µA) standoff clamp on high-Z detector node, minimizing baseline drift. Use Value: Category 1 bond and hermetic seal prevent parametric shift after 10⁶ rad(Si) exposure; 8.5 V VWM matches detector bias rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ8.5A | Surface-mount DO-214AB package; 100 W PPP; 13.6 V VC @ 12.3 A; 15 pF capacitance. | Higher capacitance limits use to <500 MHz; suitable for industrial PLC I/O but not RF or avionics. | Select when board space is constrained and radiation tolerance is not required. |
| 1N6105A | Axial-leaded glass package; 150 W PPP; 13.3 V VC @ 11.3 A; 10 pF capacitance; no Category 1 bond or radiation validation. | Lacks hermetic voidless seal and radiation qualification; limited to commercial-grade ground systems. | Choose only for cost-sensitive terrestrial applications where long-term reliability under radiation is irrelevant. |
Compared with SMCJ8.5A and 1N6105A, MX1N8151US/TR uniquely combines 4 pF capacitance, hermetic reliability, and radiation hardness - making it irreplaceable in RF, aerospace, and nuclear signal chains where parameter stability under extreme stress is non-negotiable.
Availability
MX1N8151US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, satellite telemetry transmitter, and nuclear instrumentation signal chain applications requiring stable component supply across extended product lifecycles.
Supply support for MX1N8151US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
MX1N8151US/TR belongs to Microsemi's 1N81xxUS family of hermetic TVS diodes engineered specifically for mission-critical systems where failure is not an option - including satellite payloads, nuclear instrumentation, and airborne radar.
FAQ
What is the maximum clamping voltage of MX1N8151US/TR under a 10/1000 µs surge?
The MX1N8151US/TR exhibits a maximum clamping voltage (VC) of 15.6 V when subjected to its rated peak impulse current of 11.1 A under the standardized 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and is measured per MIL-STD-883 test method 3012. The MX1N8151US/TR maintains this clamping performance without degradation after repeated surges up to its 150 W rating.
Is MX1N8151US/TR suitable for bidirectional transient protection?
No - MX1N8151US/TR is strictly unidirectional. Bidirectional protection requires two MX1N8151US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the T4-LDS-xxxx datasheet. That arrangement doubles total capacitance to 8 pF but retains the same 15.6 V clamping level for both polarities. The MX1N8151US/TR itself does not support symmetrical clamping.
Does MX1N8151US/TR meet RoHS compliance requirements?
Yes - the "e3" suffix in the full part number MX1N8151US/TR indicates RoHS-compliant matte tin plating on copper leads, per EU Directive 2011/65/EU. Lead content is below 1000 ppm, and all six restricted substances are within specified thresholds. The hermetic glass body contains no brominated flame retardants or PVC.
What is the thermal resistance and maximum junction temperature for MX1N8151US/TR?
MX1N8151US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W and a maximum junction temperature (TJ) rating of +175 °C. Its steady-state power dissipation is limited to 1.0 W at 25 °C ambient; derating begins linearly above 80 °C ambient per Figure 3 in the datasheet. The device remains fully functional at –55 °C, enabling cryogenic deployment.
How is the low 4 pF capacitance achieved in MX1N8151US/TR?
The MX1N8151US/TR achieves 4 pF total capacitance through a patented architecture integrating a standard TVS junction in series with a reverse-oriented rectifier diode inside a single hermetic glass package. This configuration cancels parasitic capacitance contributions while preserving surge-handling capability - a design not found in conventional planar or avalanche TVS diodes. The MX1N8151US/TR's 4 pF is measured at 0 V and confirmed across production lots.
MX1N8151US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 10.3A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8151US/TR FAQ
1.How can I place an order for MX1N8151US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8151US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8151US/TR reliable?
The price and inventory of MX1N8151US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8151US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8151US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8151US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8151US/TR?
MX1N8151US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8151US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8151US/TR?
For technical support, including MX1N8151US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8151US/TR requirements.
6.How does Aetrix verify that MX1N8151US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8151US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8151US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8151US/TR?
All MX1N8151US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8151US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8151US/TR part is unused and in its original packaging.
Return procedure for MX1N8151US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8151US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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