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Microchip Technology MX1N8152US/TR
- Part No.:
- MX1N8152US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8152US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
MX1N8152US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 9.0 V working standoff voltage (VWM), 15.6 V maximum clamping voltage (VC) at 9.62 A IPP, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and data lines in aerospace and defense systems.
For engineers reviewing the MX1N8152US/TR datasheet, MX1N8152US/TR pinout, MX1N8152US/TR application, or MX1N8152US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, IEC61000-4-2/4-4 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated device. Its hard-glass hermetic construction uses internal tungsten slugs and Category 1 metallurgical bonds, enabling operation from –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamp with cathode-band polarity, rated for 9.0 V DC working standoff (VWM), 10.4 V minimum breakdown (V(BR)) at 1 mA, and clamps to ≤15.6 V at 9.62 A peak impulse current (IPP). It meets IEC61000-4-2 (ESD), -4-4 (EFT), and select levels of -4-5 (lightning) standards without derating up to 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 150 W at 10/1000 µs - sustains high-energy transients without failure in telecom/data line protection. |
| Working Standoff Voltage (VWM) | 9.0 V - maximum continuous reverse voltage before conduction; matches 9 V logic and analog supply rails. |
| Clamping Voltage (VC) | 15.6 V at 9.62 A IPP - limits downstream voltage stress during surge events to safe levels for 12 V systems. |
| Capacitance (CT) | 4 pF at 0 V - preserves signal integrity in >1 GHz RF paths and high-speed serial interfaces (e.g., RS-485, CAN FD). |
| Breakdown Voltage (V(BR)) | 10.4 V min at 1 mA - ensures precise, repeatable turn-on threshold for predictable protection timing. |
| Junction Temperature Range | –55 °C to +175 °C - supports deployment in extended-temperature avionics, downhole, and military vehicle electronics. |
| Leakage Current (ID) | 5 µA max at 9.0 V - minimizes standby power loss and avoids false triggering in low-power sensor circuits. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode indicated by band; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts only during reverse transient clamping. |
| Cathode | Negative terminal; marked with band | Connected to ground or reference rail; defines unidirectional clamping direction and polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal voids - critical for long-term reliability in sealed enclosures and space-grade assemblies. |
| Category 1 metallurgical bond | Internal tungsten-based bond structure qualified per MIL-PRF-19500 - enables use in JANTX-level high-reliability programs. |
| Lowest 150 W TVS capacitance | 4 pF enables protection of >1 GHz RF amplifiers and high-speed digital buses without signal degradation or impedance mismatch. |
| Triple-layer passivation | Enhances surface insulation and humidity resistance - prevents leakage path formation on glass body under condensing environments. |
| IEC61000-4-2/4-4 certified | Validated for ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT bursts - reduces need for external filtering in certified end equipment. |
Applications
| Radar Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from lightning-induced surges and antenna-coupled transients in airborne radar systems. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at SMA connector feedthrough to limit voltage excursion below 16 V during 10/1000 µs surges. Use Value: 4 pF capacitance avoids detuning of 1.2–1.4 GHz matching networks; 150 W rating handles induced energy from nearby strikes without degradation. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data lines against ESD events during maintenance and environmental exposure. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted inline on differential pair traces to clamp common-mode transients while preserving signal rise time. Use Value: 9.0 V VWM aligns with 10 V nominal bus voltage; 15.6 V VC ensures receiver ICs remain within absolute maximum ratings during ±15 kV ESD events. |
| Downhole Telemetry Transceiver | Military Vehicle CAN FD Node |
Use Scenario: Shielding RS-485 telemetry links in oil/gas wellhead controllers exposed to high-temperature, high-vibration, and EMI-rich environments. IC Role / Device Role / Timing Role: Axial-leaded TVS soldered across twisted-pair terminals to absorb switching noise and cable discharge events. Use Value: –55 °C to +175 °C operation survives downhole thermal cycling; hermetic seal prevents corrosion in H₂S/CO₂ saturated atmospheres. | Use Scenario: Protecting CAN FD physical layer transceivers in tracked vehicle control modules subjected to load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional clamp on CAN_H line referenced to chassis ground to suppress negative-going transients without affecting dominant/recessive states. Use Value: 150 W PPP withstands 12 V system load-dump spikes; 4 pF capacitance preserves >2 Mbps bit rate integrity without jitter accumulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ9.0A | Surface-mount DO-214AB package; 1000 W PPP; 12.6 V VC at 32.4 A; 15 pF capacitance. | Higher power but 3.75× higher capacitance - unsuitable for RF or >100 Mbps digital lines. | Select when board space is constrained and RF performance is not required; requires re-layout due to SMD footprint. |
| 1N6105A | Axial-leaded, 150 W, 9.0 V VWM, but 10 pF capacitance and non-hermetic epoxy package. | Lacks Category 1 bond and hermetic seal - not qualified for aerospace or extended-temperature deployments. | Acceptable for commercial industrial use where cost is prioritized over radiation hardness or 175 °C operation. |
Compared with SMCJ9.0A and 1N6105A, MX1N8152US/TR uniquely combines axial-leaded through-hole robustness, 4 pF capacitance, hermetic reliability, and Category 1 qualification - making it the only option for RF-critical, high-temperature, mission-critical transient suppression.
Availability
MX1N8152US/TR is available at Aetrix Electronics and suitable for radar front-end protection, avionics data bus interface, and downhole telemetry requiring stable component supply across extended temperature ranges and high-reliability certifications.
Supply support for MX1N8152US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and hermetically packaged components.
The MX1N8152US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for ESD/EMP protection in RF, telemetry, and command-and-control systems where failure is not an option.
FAQ
What is the clamping voltage of MX1N8152US/TR at its rated peak impulse current?
The MX1N8152US/TR has a maximum clamping voltage (VC) of 15.6 V at 9.62 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures protected circuitry remains within safe operating limits during surge events. The MX1N8152US/TR achieves this performance while maintaining only 4 pF capacitance - a key differentiator versus higher-capacitance alternatives.
Is MX1N8152US/TR suitable for bidirectional transient protection?
No - MX1N8152US/TR is strictly unidirectional. For bidirectional protection, two MX1N8152US/TR devices must be connected in anti-parallel, as documented in Figure 5 of the datasheet. This configuration doubles total capacitance to 8 pF but retains the same 150 W rating per path. The MX1N8152US/TR itself does not support symmetrical clamping in both polarities.
Does MX1N8152US/TR meet RoHS requirements?
Yes - the "e3" suffix in the full part number MX1N8152US/TR indicates RoHS-compliant matte tin plating over copper leads. The device complies with Directive 2011/65/EU and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Non-RoHS versions (blank suffix) are also available for legacy military programs.
What is the thermal resistance of MX1N8152US/TR, and how does it affect power handling?
The MX1N8152US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W. At 25 °C ambient, this allows 1.0 W steady-state dissipation; however, its 150 W peak pulse rating applies only to short-duration (10/1000 µs) transients where thermal mass dominates. Continuous operation above 1 W requires heatsinking or forced airflow - the MX1N8152US/TR is not intended for sustained power dissipation.
Can MX1N8152US/TR be used in place of standard 1N8152 without modification?
Yes - MX1N8152US/TR is the JANTX-qualified, RoHS-compliant, hermetically sealed variant of the base 1N8152. It shares identical electrical specifications (VWM = 9.0 V, VC = 15.6 V, CT = 4 pF) and axial-leaded mechanical form factor. The "MX" prefix denotes JANTX reliability level, "US" indicates surface-finish compliance, and "/TR" denotes tape-and-reel packaging - all fully compatible with legacy 1N8152 PCB footprints and assembly processes.
MX1N8152US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10.4V
- Voltage - Clamping (Max) @ Ipp:
- 15.6V
- Current - Peak Pulse (10/1000µs):
- 9.62A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8152US/TR FAQ
1.How can I place an order for MX1N8152US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8152US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8152US/TR reliable?
The price and inventory of MX1N8152US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8152US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8152US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8152US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8152US/TR?
MX1N8152US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8152US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8152US/TR?
For technical support, including MX1N8152US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8152US/TR requirements.
6.How does Aetrix verify that MX1N8152US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8152US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8152US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8152US/TR?
All MX1N8152US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8152US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8152US/TR part is unused and in its original packaging.
Return procedure for MX1N8152US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8152US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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