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Microchip Technology MX1N8153US/TR
- Part No.:
- MX1N8153US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8153US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,497
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Product details
Overview
MX1N8153US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 10.0 V working standoff voltage (VWM), 16.9 V maximum clamping voltage (VC) at 11.7 A peak impulse current (IPP), 4 pF capacitance, and 150 W peak pulse power rating at 10/1000 µs. It employs a series-connected rectifier diode architecture to achieve ultra-low capacitance and is rated for high-reliability aerospace and defense applications requiring ESD/EFT protection per IEC61000-4-2/4-4.
For engineers reviewing the MX1N8153US/TR datasheet, MX1N8153US/TR pinout, MX1N8153US/TR application, or MX1N8153US/TR equivalent, this device is selected for high-frequency signal line protection where low capacitance, radiation hardness, Category 1 metallurgical bonding, and hermetic glass packaging are mandatory design requirements.
Technical Context
This TVS uses a unique dual-element structure: a Zener-like avalanche junction in series with a reverse-oriented rectifier diode, enabling unidirectional operation while suppressing junction capacitance to 4 pF. Its hard-glass hermetic package eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device delivers 150 W peak pulse power at 10/1000 µs waveform with 11.7 A IPP and 16.9 V VC, and exhibits 0.078 %/°C breakdown voltage temperature coefficient. It meets MIL-STD-750 Method 1020 for ESD insensitivity and is inherently radiation-hard per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10.0 V - Maximum continuous reverse-biased operating voltage before conduction begins. |
| VC @ IPP | 16.9 V at 11.7 A - Clamped voltage during 10/1000 µs surge, limiting downstream IC stress. |
| CT | 4 pF - Enables protection of >1 GHz RF lines and high-speed data interfaces without signal distortion. |
| PPP | 150 W - Sustains high-energy transients such as lightning-induced surges per IEC61000-4-5 Level 3. |
| TJ Range | –55 °C to +175 °C - Supports operation in extreme environments including avionics and downhole electronics. |
| αV(BR) | 0.078 %/°C - Predictable voltage drift over temperature, critical for precision clamp threshold stability. |
| RθJA | 150 °C/W - Thermal resistance defines derating behavior on standard PCBs; full power only at TA ≤ 25 °C. |
Pinout & Package
MX1N8153US/TR is housed in an axial-leaded, voidless-hermetically-sealed hard-glass package with tungsten slugs and cathode band polarity marking. Leads are RoHS-compliant matte tin-plated copper. Weight: ~340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for protected signal line | Connected to line under protection; conducts during overvoltage events to shunt energy to ground. |
| Cathode | Reference/ground terminal | Marked by colored band; ties to system ground or common reference plane to complete clamping path. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination, ensuring long-term reliability in sealed enclosures. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability military/aerospace use per MIL-PRF-19500. |
| Series rectifier + TVS architecture | Reduces total capacitance to 4 pF-lowest among 150 W-rated TVS devices-preserving signal integrity. |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) and single-event effects, validated per MicroNote 050. |
| IEC61000-4-2/4-4 compliance | Withstands ±8 kV contact / ±15 kV air ESD and 4 kV EFT bursts without degradation or latch-up. |
Applications
| Radar Front-End Receiver Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from lightning-induced surges and antenna coupling transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector feedthrough to clamp fast-rising transients before low-noise amplifier input. Use Value: 4 pF capacitance prevents RF insertion loss and phase distortion; 16.9 V clamping ensures LNA remains below absolute maximum ratings. |
Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553 bus receivers against induced transients during aircraft power switching. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data lines to suppress common-mode surges without disrupting signal timing integrity. Use Value: 10.0 V VWM matches bus logic thresholds; hermetic seal prevents corrosion in humid cabin environments. |
| Satellite Command & Telemetry Link | Downhole Oilfield Sensor Interface |
Use Scenario: Shielding S-band telemetry receivers from launch vibration-induced ESD and solar flare-induced transients. IC Role / Device Role / Timing Role: Radiation-hardened TVS on RF front-end bias and signal paths to maintain link uptime in deep space missions. Use Value: Inherent radiation tolerance eliminates need for shielding mass; 175 °C max TJ supports passive thermal management. |
Use Scenario: Protecting pressure/temperature sensor analog outputs in high-temperature (>150 °C) wellhead electronics exposed to switching surges. IC Role / Device Role / Timing Role: High-temp-stable TVS on 4–20 mA loop outputs to prevent field transmitter damage during motor starter activation. Use Value: Stable 0.078 %/°C αV(BR) ensures predictable clamping across full operational range; hermetic seal resists H₂S corrosion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ10A | Surface-mount DO-214AB package; 10.0 V VWM but 17.0 V VC at 12.3 A; 100 pF capacitance. | Not suitable for >100 MHz signal lines due to higher capacitance; lacks radiation hardness and hermetic seal. | Select when cost-sensitive commercial designs require SMT assembly and radiation performance is not required. |
| 1N6375 | Axial-leaded, non-hermetic epoxy package; 10 V VWM, 17.0 V VC at 12.3 A; 100 pF; no Category 1 bond or radiation qualification. | Approved for industrial use only; fails MIL-STD-750 ESD testing and degrades above 125 °C junction. | Choose only for non-critical terrestrial applications where hermeticity, temperature range, and radiation tolerance are irrelevant. |
Compared with SMCJ10A and 1N6375, MX1N8153US/TR uniquely combines 4 pF capacitance, hermetic sealing, Category 1 bonding, and radiation hardness-making it irreplaceable in aerospace, defense, and oilfield electronics where failure is not an option.
Availability
MX1N8153US/TR is available at Aetrix Electronics and suitable for radar front-end protection, avionics data bus interface, and satellite telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for MX1N8153US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The 1N8149–1N8182 family was designed specifically for mission-critical transient protection in hermetically sealed, high-temperature, radiation-intensive environments-prioritizing long-term reliability over cost or footprint.
FAQ
What is the maximum operating temperature for MX1N8153US/TR?
MX1N8153US/TR has a junction and storage temperature range of –55 °C to +175 °C. This enables deployment in extreme environments such as jet engine compartments, downhole tools, and satellite payloads. The 175 °C upper limit is sustained under derated power conditions per the published thermal derating curve, and the device maintains specified electrical parameters throughout this range when properly mounted.
Does MX1N8153US/TR meet IEC61000-4-5 for lightning surge protection?
Yes, MX1N8153US/TR provides secondary lightning surge protection per select levels of IEC61000-4-5. With its 150 W peak pulse power rating at 10/1000 µs and 16.9 V clamping voltage at 11.7 A, it satisfies Level 3 (2 kV line-to-ground, 1 kV line-to-line) requirements when applied with appropriate series impedance. Its hermetic construction ensures consistent performance across repeated surges without parameter drift.
Is MX1N8153US/TR compatible with lead-free soldering processes?
Yes, MX1N8153US/TR supports lead-free reflow and wave soldering with a maximum solder temperature of 260 °C for up to 10 seconds. Its RoHS-compliant matte tin plating over copper leads ensures reliable wetting and intermetallic formation without whisker risk. The hard-glass body remains unaffected by thermal excursions within JEDEC J-STD-020 limits.
How does the series rectifier configuration reduce capacitance in MX1N8153US/TR?
MX1N8153US/TR integrates a rectifier diode in series and opposite polarity to the main TVS junction. This arrangement cancels parasitic junction capacitance contributions, achieving a net 4 pF total capacitance-significantly lower than conventional single-junction TVS devices. The result is minimal loading on high-frequency signals, preserving rise time and impedance matching in RF and high-speed digital paths.
What is the significance of "Category 1 metallurgical bond" for MX1N8153US/TR?
The Category 1 metallurgical bond in MX1N8153US/TR refers to an internal wirebond or die-attach structure qualified to MIL-PRF-19500 for high-reliability semiconductor devices. It guarantees mechanical robustness under shock/vibration, thermal cycling, and long-term aging-critical for aerospace and defense deployments where field failure is unacceptable. This bond type exceeds commercial-grade reliability standards.
MX1N8153US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.9V
- Current - Peak Pulse (10/1000µs):
- 8.88A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8153US/TR FAQ
1.How can I place an order for MX1N8153US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8153US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8153US/TR reliable?
The price and inventory of MX1N8153US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8153US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8153US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8153US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8153US/TR?
MX1N8153US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8153US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8153US/TR?
For technical support, including MX1N8153US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8153US/TR requirements.
6.How does Aetrix verify that MX1N8153US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8153US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8153US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8153US/TR?
All MX1N8153US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8153US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8153US/TR part is unused and in its original packaging.
Return procedure for MX1N8153US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8153US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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