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Microchip Technology MX1N8154US/TR
- Part No.:
- MX1N8154US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8154US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,422
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Product details
Overview
MX1N8154US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 11.0 V working standoff voltage (VWM), 18.2 V maximum clamping voltage (VC) at 8.24 A IPP, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and MIL-STD-750-compliant aerospace interfaces.
For engineers reviewing the MX1N8154US/TR datasheet, MX1N8154US/TR pinout, MX1N8154US/TR application, or MX1N8154US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (1 µA max at 11.0 V), and IEC61000-4-2/4-4 compliance for robust secondary lightning and EFT protection in mission-critical systems.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated unidirectional device. Its hard-glass hermetic construction ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device uses internal tungsten slugs and Category 1 metallurgical bonds per MIL-STD-780, enabling radiation hardness per MicroNote 050 and immunity to ESD per MIL-STD-750 Method 1020. It is rated for 150 W peak pulse power (10/1000 µs), 1.0 W steady-state power at 25 °C, and 0.01% impulse repetition rate.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11.0 V - Maximum continuous reverse voltage before leakage exceeds 1 µA; sets safe operating margin for 12 V signal rails. |
| V(BR) min | 12.4 V - Minimum breakdown voltage at 1 mA; guarantees reliable clamping onset above normal operating voltage. |
| VC @ IPP | 18.2 V at 8.24 A - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to sub-19 V during transients. |
| CT | 4 pF - Total small-signal capacitance; preserves signal integrity up to multi-GHz frequencies in RF and high-speed data lines. |
| PPP | 150 W - Peak pulse power rating at 25 °C; supports repeated lightning-induced surges per IEC61000-4-5 Level 3. |
| TJ Range | –55 °C to +175 °C - Extended junction temperature range enables deployment in avionics, downhole tools, and engine control units. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for thermal management in sealed enclosures. |
Pinout & Package
MX1N8154US/TR is housed in an axial-leaded, voidless-hermetically-sealed hard-glass package with tungsten slugs and cathode band polarity marking. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300". RoHS-compliant matte tin plating over copper leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink terminal under reverse bias | Connected to protected signal line; conducts surge current to ground when V > VWM. |
| Cathode | Reference terminal (marked by band) | Connected to system ground or low-impedance return path; defines unidirectional conduction direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and internal delamination - critical for 20+ year field life in space-grade applications. |
| Category 1 metallurgical bond | Meets MIL-STD-780 reliability requirements for high-vibration, high-shock environments including missile guidance systems. |
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier - enables use on 10 Gbps Ethernet, PCIe Gen4, and radar IF lines without signal degradation. |
| IEC61000-4-2/4-4 compliance | Validated for ±15 kV contact / ±20 kV air discharge ESD and 4 kV EFT bursts - reduces need for external filtering in medical telemetry designs. |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per MicroNote 050 - supports deployment in LEO satellite payloads without shielding overhead. |
Applications
| Avionics Data Bus Protection | Military Radio Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between signal line and chassis ground, absorbing 150 W surges without forward conduction. Use Value: 4 pF capacitance avoids skew or attenuation of 1 Mbps Manchester-encoded signals; 18.2 V clamping prevents receiver input stage latch-up. | Use Scenario: Shielding SDR transceiver RF input stages from ESD events during field antenna connection/disconnection. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at SMA connector feedthrough to preserve impedance match and noise figure. Use Value: 11.0 V VWM aligns with 12 V bias rails; 4 pF CT maintains <0.1 dB insertion loss at 2.4 GHz, verified per Microsemi application note LDS-AN-001. |
| Downhole Oilfield Sensor Interface | Medical Imaging Signal Chain |
Use Scenario: Safeguarding analog sensor outputs (e.g., piezoresistive pressure transducers) in high-temperature oil/gas wellhead electronics. IC Role / Device Role / Timing Role: Standoff-rated TVS on 4–20 mA loop inputs, operating continuously at 175 °C junction temperature. Use Value: Hermetic glass package prevents hydrogen embrittlement at 150 °C ambient; 1 µA ID ensures no offset error in µA-level sensor currents. | Use Scenario: Protecting ultrasound beamformer ADC inputs from ESD during probe handling in MRI/CT gantry environments. IC Role / Device Role / Timing Role: First-stage transient suppressor on 12-bit, 40 MSPS analog front-end, placed before active filtering. Use Value: 18.2 V VC limits transient overshoot below ADC full-scale; 4 pF CT avoids resonance with 50 Ω source impedance up to 800 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11A | Surface-mount SMB package; 100 W PPP; 18.2 V VC at 6.5 A; 100 pF CT | Lacks hermetic seal and Category 1 bonding; not qualified for aerospace or downhole use | Select only for cost-sensitive commercial PCBs where 100 pF capacitance is acceptable and temperature range ≤125 °C |
| 1N6105A | Axial-leaded but non-hermetic epoxy package; 150 W PPP; 18.2 V VC at 8.2 A; 15 pF CT | No radiation hardness; higher leakage (5 µA); fails MIL-STD-750 Method 1020 ESD test | Acceptable for industrial automation where ESD immunity and long-term hermeticity are not required |
Compared with SMBJ11A and 1N6105A, MX1N8154US/TR provides uniquely low 4 pF capacitance and hermetic reliability for high-frequency, high-reliability deployments - making it irreplaceable in avionics, defense comms, and downhole electronics where failure is not an option.
Availability
MX1N8154US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, military radio front-end shielding, and downhole oilfield sensor interface applications requiring stable component supply across extended product lifecycles.
Supply support for MX1N8154US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N8149–1N8182 family was engineered specifically for mission-critical transient suppression where hermeticity, low capacitance, and extreme temperature resilience are mandatory - targeting MIL-STD, DO-160, and API RP 14C compliance.
FAQ
What is the maximum clamping voltage of MX1N8154US/TR under a 10/1000 µs surge?
The MX1N8154US/TR has a maximum clamping voltage (VC) of 18.2 V when subjected to its rated peak impulse current (IPP) of 8.24 A under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures protected circuitry remains below critical voltage thresholds during transient events. The MX1N8154US/TR achieves this performance while maintaining only 4 pF capacitance - a key differentiator versus conventional TVS diodes.
Does MX1N8154US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8154US/TR is validated for ESD immunity per IEC61000-4-2 (±15 kV contact, ±20 kV air) and electrical fast transient (EFT) immunity per IEC61000-4-4 (4 kV burst). These ratings are enabled by its low-leakage design (≤1 µA at 11.0 V VWM), robust junction structure, and hermetic packaging - all confirmed in Microsemi's T4-LDS-xxxx characterization report. The MX1N8154US/TR delivers these protections without compromising signal fidelity due to its 4 pF capacitance.
What is the junction temperature range for MX1N8154US/TR?
The MX1N8154US/TR operates across a junction temperature range of –55 °C to +175 °C, verified per MIL-STD-750 Test Method 1037. This extended range supports deployment in extreme environments such as jet engine controllers, geothermal sensor modules, and satellite power distribution units. The MX1N8154US/TR maintains full 150 W pulse rating at 25 °C and derates linearly to ~90 W at 125 °C, as shown in Figure 3 of the official datasheet.
Is MX1N8154US/TR RoHS compliant?
Yes, MX1N8154US/TR is RoHS compliant (e3 marking), with matte tin plating over copper leads and lead-free glass encapsulation. The "e3" suffix in the part number explicitly denotes RoHS compliance per Directive 2011/65/EU. Microsemi confirms full material declarations and substance restrictions compliance for MX1N8154US/TR in its Certificate of Compliance (CoC) issued under revision T4-LDS-xxxx.
How does the low capacitance architecture of MX1N8154US/TR work?
The MX1N8154US/TR achieves 4 pF capacitance by integrating a rectifier diode in series and opposite polarity to the main TVS junction - a proprietary topology that cancels parasitic junction capacitance while preserving unidirectional clamping behavior. This architecture is detailed in Figure 4 of the datasheet and distinguishes MX1N8154US/TR from standard avalanche diodes. No external components are needed; the MX1N8154US/TR functions as a standalone low-C TVS in a single axial package.
MX1N8154US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.4V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 8.24A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8154US/TR FAQ
1.How can I place an order for MX1N8154US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8154US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8154US/TR reliable?
The price and inventory of MX1N8154US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8154US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8154US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8154US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8154US/TR?
MX1N8154US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8154US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8154US/TR?
For technical support, including MX1N8154US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8154US/TR requirements.
6.How does Aetrix verify that MX1N8154US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8154US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8154US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8154US/TR?
All MX1N8154US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8154US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8154US/TR part is unused and in its original packaging.
Return procedure for MX1N8154US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8154US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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