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Microchip Technology MX1N8155US/TR
- Part No.:
- MX1N8155US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8155US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,954
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Product details
Overview
MX1N8155US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 12.0 V working standoff voltage (VWM), 4 pF capacitance, 150 W peak pulse power at 10/1000 µs, and 20.2 V clamping voltage (VC) at 11.7 A peak surge current. It employs a series-opposed rectifier diode architecture for ultra-low capacitance and is rated for high-reliability aerospace and defense applications requiring ESD/EFT protection per IEC61000-4-2/4-4.
For engineers reviewing the MX1N8155US/TR datasheet, MX1N8155US/TR pinout, MX1N8155US/TR application, or MX1N8155US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, -55°C to +175°C junction temperature range, RoHS-compliant matte tin plating, axial-leaded hard-glass package, and low 0.5 µA standby current at VWM.
Technical Context
The MX1N8155US/TR implements a unique dual-junction structure: a TVS diode in series with an oppositely oriented rectifier diode, enabling 4 pF total capacitance-lowest among 150 W-rated TVS devices. This configuration maintains unidirectional operation while minimizing signal distortion in RF and high-speed data lines.
It is constructed using voidless hermetic glass encapsulation with tungsten slugs and internal Category 1 metallurgical bonds, meeting MIL-STD-750 Method 1020 for ESD insensitivity and Microsemi MicroNote 050 for inherent radiation hardness-critical for space-grade and avionics systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.0 V maximum continuous reverse standoff voltage-defines max DC/peak AC voltage before conduction begins. |
| VC @ IPP | 20.2 V clamping voltage at 11.7 A peak impulse current-limits transient-induced voltage stress on protected ICs. |
| PPP | 150 W peak pulse power at 10/1000 µs waveform-supports robust lightning surge immunity per IEC61000-4-5 Level 3. |
| CT | 4 pF total capacitance at 0 V-enables use in >1 GHz RF front-ends and high-baud-rate serial interfaces without signal degradation. |
| TJ Range | -55°C to +175°C operating junction temperature-validates suitability for extreme-environment military and downhole electronics. |
| ID @ VWM | 0.5 µA maximum standby leakage-minimizes power drain in always-on sensor and telemetry circuits. |
| RθJA | 150°C/W thermal resistance-requires adequate PCB copper area or heatsinking for sustained 1.0 W average power dissipation. |
Pinout & Package
MX1N8155US/TR uses an axial-leaded hard-glass "A" package (0.060–0.085″ body diameter, 0.800–1.300″ lead length) with cathode band marking and tin/lead or RoHS-compliant matte tin plating over copper leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to system ground or low-impedance return path during transient suppression. |
| Cathode | Negative terminal; marked with band | Connected to protected line (e.g., RS-485 bus, RF antenna feed); conducts when Vline exceeds VWM. |
Key Features
| Feature | Design Value |
|---|---|
| Series-opposed diode architecture | Enables 4 pF capacitance-critical for preserving signal integrity in GPS L1/L2, SATCOM, and radar receiver front-ends. |
| Category 1 metallurgical bond | Guarantees mechanical and thermal stability under shock/vibration and thermal cycling-required for JANTXV-class reliability. |
| Voidless hermetic glass seal | Prevents moisture ingress and parameter drift over 20+ year service life in sealed avionics enclosures. |
| IEC61000-4-2/4-4 compliance | Validated for ±15 kV contact / ±20 kV air discharge ESD and 4 kV EFT burst immunity-meets DO-160 Section 22. |
Applications
| GPS Receiver Front-End Protection | Avionics Data Bus Transient Suppression |
|---|---|
Use Scenario: Protecting L1/L2 antenna input stages of airborne GPS receivers from induced transients during lightning proximity events. IC Role / Device Role / Timing Role: Unidirectional TVS placed between antenna feed and LNA input to clamp surges while preserving sub-1 dB noise figure. Use Value: 4 pF capacitance avoids detuning of 1.575 GHz / 1.227 GHz matching networks; 20.2 V clamping prevents LNA saturation or gate oxide damage. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data bus receivers against coupling-induced transients from adjacent power switching. IC Role / Device Role / Timing Role: Standoff-mounted TVS on bus line inputs to absorb 150 W surges without disrupting 1 Mbps or 1 MBps signaling integrity. Use Value: 12.0 V VWM aligns with bus common-mode range; low leakage ensures no DC loading on differential receivers. |
| Downhole Telemetry Sensor Interface | Spacecraft Command & Telemetry Line Protection |
Use Scenario: Shielding pressure/temperature sensor analog outputs in oil/gas well logging tools exposed to high-temperature, high-vibration environments. IC Role / Device Role / Timing Role: Primary transient shunt on 4–20 mA loop or RS-485 interface, mounted directly at connector entry point. Use Value: -55°C to +175°C rating supports operation at 175°C downhole; hermetic seal prevents hydrogen embrittlement failure. | Use Scenario: Hardening S-band/UHF command uplink receivers and telemetry downlink drivers against single-event transients in LEO orbit. IC Role / Device Role / Timing Role: Radiation-hardened TVS on RF front-end bias lines and digital control lines interfacing with FPGAs or microcontrollers. Use Value: Inherent radiation hardness (MicroNote 050) eliminates need for shielding or derating; Category 1 bond withstands launch vibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ12A | Surface-mount DO-214AB package; 12 V VWM; 21.2 V VC @ 12.3 A; 400 W PPP; 100 pF capacitance. | Higher capacitance limits use in RF paths; suited for board-level power rail protection, not antenna feeds. | Select when PCB space is constrained and RF performance is not required. |
| 1N8155US | Same die and electrical specs as MX1N8155US/TR but non-RoHS, tin/lead plating; identical axial package and Category 1 bond. | No functional difference; used where legacy solder processes require Pb-based termination. | Select only if RoHS exemption applies and tin/lead assembly is mandated. |
Compared with SMCJ12A and 1N8155US, MX1N8155US/TR uniquely delivers 4 pF capacitance in a hermetically sealed, radiation-hardened, Category 1–bonded axial package-making it irreplaceable for RF-sensitive, high-reliability, or space-qualified designs where signal fidelity and long-term parametric stability are non-negotiable.
Availability
MX1N8155US/TR is available at Aetrix Electronics and suitable for GPS receiver front-ends, avionics data buses, and downhole telemetry sensors requiring stable component supply across extended product lifecycles and mission-critical deployments.
Supply support for MX1N8155US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.
The MX1N8155US/TR belongs to Microsemi's 1N8149–1N8182 TVS family, engineered specifically for mission-critical transient protection in defense, space, and oilfield electronics where failure is not an option.
FAQ
What is the clamping voltage of MX1N8155US/TR at its rated peak surge current?
The MX1N8155US/TR has a maximum clamping voltage (VC) of 20.2 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures protected downstream circuitry-such as LNAs or bus transceivers-experiences minimal overvoltage stress during transient events. The MX1N8155US/TR maintains this clamping performance across its full -55°C to +175°C operating temperature range.
Does MX1N8155US/TR meet MIL-STD-750 ESD testing requirements?
Yes, MX1N8155US/TR is nonsensitive to ESD per MIL-STD-750 Method 1020, verified through standardized human-body-model testing. Its voidless hermetic construction and Category 1 metallurgical bonds contribute to this robustness. This qualification makes MX1N8155US/TR suitable for handling and assembly in environments without full ESD controls-critical for field-deployable and repairable military systems.
Is MX1N8155US/TR suitable for bidirectional transient protection?
No, MX1N8155US/TR is strictly unidirectional. For bidirectional protection, two MX1N8155US/TR devices must be connected in anti-parallel (cathode-to-anode), as shown in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping and power ratings per polarity-commonly used in AC-coupled RF or telecom interfaces.
What is the thermal resistance junction-to-ambient for MX1N8155US/TR?
The MX1N8155US/TR has a thermal resistance junction-to-ambient (RθJA) of 150°C/W under standard PCB mounting conditions. This value assumes adequate copper pour and thermal vias; actual dissipation capability depends on board layout. For continuous 1.0 W average power operation, ambient temperature must remain ≤25°C, or derating per Figure 3 must be applied-especially relevant in sealed avionics enclosures.
How does the series-opposed diode architecture in MX1N8155US/TR reduce capacitance?
The MX1N8155US/TR integrates a TVS junction in series with a reverse-oriented rectifier diode, creating a composite structure where the rectifier's depletion region dominates the overall junction capacitance. This design achieves 4 pF-significantly lower than conventional TVS diodes-without sacrificing breakdown sharpness or clamping response time. The result is preserved signal integrity in high-frequency applications where MX1N8155US/TR is deployed.
MX1N8155US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.8V
- Voltage - Clamping (Max) @ Ipp:
- 20.2V
- Current - Peak Pulse (10/1000µs):
- 7.42A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8155US/TR FAQ
1.How can I place an order for MX1N8155US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8155US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8155US/TR reliable?
The price and inventory of MX1N8155US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8155US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8155US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8155US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8155US/TR?
MX1N8155US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8155US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8155US/TR?
For technical support, including MX1N8155US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8155US/TR requirements.
6.How does Aetrix verify that MX1N8155US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8155US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8155US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8155US/TR?
All MX1N8155US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8155US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8155US/TR part is unused and in its original packaging.
Return procedure for MX1N8155US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8155US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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