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Microchip Technology MX1N8156US/TR
- Part No.:
- MX1N8156US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8156US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
MX1N8156US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 13.0 V working standoff voltage (VWM) with 22.3 V clamping voltage (VC) at 11.7 A peak surge current. It is used in aerospace-grade data links requiring ESD/EFT immunity per IEC61000-4-2/4-4.
For engineers reviewing the MX1N8156US/TR datasheet, MX1N8156US/TR pinout, MX1N8156US/TR application, or MX1N8156US/TR equivalent, this page provides verified electrical parameters, hermetic glass package details, Category 1 metallurgical bond reliability data, and direct alternatives for high-integrity transient suppression in MIL-STD-750-compliant designs.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction with tungsten slugs enables operation from –55 °C to +175 °C and supports radiation-hardened performance per MicroNote 050.
The device meets IEC61000-4-2 Level 4 (±15 kV contact), IEC61000-4-4 (40 A, 5/50 ns), and select IEC61000-4-5 secondary lightning levels. Its 0.01% impulse repetition rate and 150 °C/W thermal resistance require careful PCB thermal design for sustained surge duty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13.0 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA. |
| VC @ IPP | 22.3 V @ 11.7 A - Clamped voltage during 10/1000 µs surge, limiting downstream IC stress to safe levels. |
| PPP | 150 W - Peak pulse power rating defines maximum transient energy absorption capability. |
| CT | 4 pF - Total capacitance ensures minimal signal distortion on >100 MHz RF/data lines. |
| TJ Range | –55 °C to +175 °C - Junction temperature range validated for aerospace and downhole applications. |
| RθJA | 150 °C/W - Thermal resistance requires ≥1 cm² copper pour for reliable 1.0 W steady-state dissipation. |
| V(BR) Min | 15.2 V @ 1 mA - Minimum breakdown voltage guarantees consistent turn-on threshold across lot and temperature. |
Pinout & Package
MX1N8156US/TR uses an axial-leaded hermetically sealed hard-glass package with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path | Connected to protected line; conducts surge current toward ground when VAK > VBR. |
| Cathode | Reference terminal / polarity indicator | Marked by band; must be biased positive relative to anode for normal blocking; defines unidirectional behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture ingress and long-term parameter drift in humid or vacuum environments. |
| Category 1 metallurgical bond | Validated interfacial bond strength per MIL-STD-750 Method 2035, enabling use in Class H reliability programs. |
| Triple-layer passivation | Prevents surface leakage and corrosion under high-humidity, salt-spray, or condensing conditions. |
| Low 4 pF capacitance | Preserves signal integrity on high-speed serial interfaces (e.g., RS-422, MIL-STD-1553B, ARINC 429). |
| Nonsensitive to ESD | Withstands handling per MIL-STD-750 Method 1020 without parameter shift or latent failure. |
Applications
| Aerospace Data Bus Protection | Military Radar Front-End |
|---|---|
Use Scenario: Protecting MIL-STD-1553B stubs against induced lightning transients and ESD events on airborne platforms. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus line and chassis ground to clamp surges without distorting 1 Mbps Manchester-encoded signals. Use Value: 4 pF capacitance prevents rise-time degradation; 22.3 V clamping ensures receiver input stays below absolute maximum ratings during 10/1000 µs surges up to 11.7 A. |
Use Scenario: Shielding L-band radar receiver LNAs from antenna-coupled ESD and nearby lightning-induced surges. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at SMA connector feedthrough to suppress transients before RF amplification stage. Use Value: Hermetic glass package withstands thermal cycling and outgassing in vacuum; 150 W PPP handles multi-kA coupled surges without parametric shift. |
| Downhole Telemetry Systems | Avionics Power Sequencing |
Use Scenario: Safeguarding RS-485 telemetry links in oil/gas wellhead controllers exposed to 175 °C ambient and ESD during maintenance. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential pair, leveraging 13.0 V VWM to match 12 V supply rails while surviving junction temperatures up to +175 °C. Use Value: Radiation-hardened structure maintains leakage <0.5 µA after 100 krad(Si); 4 pF avoids skew between A/B lines in full-duplex mode. |
Use Scenario: Protecting discrete MOSFET gate drivers in engine control unit (ECU) power-up sequencing circuits from inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS placed across driver output to clamp negative-going transients generated by relay coils or solenoids. Use Value: 15.2 V minimum breakdown ensures no false triggering during 12 V nominal rail ramp-up; cathode band enables correct orientation in high-density layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ13A | Surface-mount DO-214AB package; 13 V VWM; 21.5 V VC @ 12.5 A; 400 W PPP; 15 pF CT. | Higher capacitance limits use above ~30 MHz; lacks hermetic seal and Category 1 bond. | Preferred for cost-sensitive industrial PCBs where SMT assembly and lower reliability tier are acceptable. |
| 1N6377 | Axial-leaded, non-hermetic glass; 13 V VWM; 21.2 V VC @ 12.2 A; 150 W PPP; 10 pF CT; commercial temp range only. | No radiation hardness; not qualified to MIL-STD-750; limited to –65 °C to +175 °C with derating. | Suitable for non-aerospace avionics or test equipment where hermeticity and extended reliability validation are unnecessary. |
Compared with SMCJ13A and 1N6377, MX1N8156US/TR uniquely combines 4 pF capacitance, hermetic voidless sealing, Category 1 metallurgical bonding, and full –55 °C to +175 °C operation-making it irreplaceable in mission-critical systems where parameter stability under extreme environmental stress is mandatory.
Availability
MX1N8156US/TR is available at Aetrix Electronics and suitable for aerospace data buses, military radar front-ends, downhole telemetry systems, avionics power sequencing, and high-reliability ESD protection requiring stable component supply across extended temperature and radiation environments.
Supply support for MX1N8156US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.
MX1N8156US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for MIL-STD, DO-160, and ECSS-E-ST-20-07C compliance in safety-critical electronic systems.
FAQ
What is the maximum clamping voltage of MX1N8156US/TR at its rated peak surge current?
The MX1N8156US/TR has a maximum clamping voltage (VC) of 22.3 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures downstream circuitry remains within safe voltage limits during transient events. The MX1N8156US/TR achieves this performance using its low-capacitance series-diode architecture and hard-glass hermetic package.
Is MX1N8156US/TR compliant with RoHS and lead-free soldering requirements?
Yes, MX1N8156US/TR is RoHS compliant (e3 marking) and qualified for lead-free reflow soldering up to 260 °C for 10 seconds. Its axial leads feature matte tin plating over copper, ensuring compatibility with modern Pb-free assembly processes while maintaining solder joint reliability under thermal cycling. The MX1N8156US/TR also meets MIL-STD-750 Method 2035 for intermetallic bond integrity post-reflow.
Does MX1N8156US/TR support bidirectional transient suppression?
No, MX1N8156US/TR is strictly unidirectional. For bidirectional protection, two MX1N8156US/TR devices must be connected in anti-parallel (anode-to-anode or cathode-to-cathode), as documented in Figure 5 of the T4-LDS-xxxx datasheet. This configuration doubles total capacitance to 8 pF but preserves low-clamp performance and hermetic reliability across both polarities.
What is the significance of "Category 1 metallurgical bond" for MX1N8156US/TR?
"Category 1 metallurgical bond" refers to a validated, high-strength interfacial bond between the silicon die and internal tungsten slug, tested per MIL-STD-750 Method 2035. For MX1N8156US/TR, this ensures mechanical and electrical integrity under severe shock, vibration, and thermal cycling-critical for flight-critical systems. The MX1N8156US/TR's Category 1 bond contributes directly to its qualification for JANTX-level reliability screening.
Can MX1N8156US/TR be used in radiation-intensive environments such as space or nuclear facilities?
Yes, MX1N8156US/TR is inherently radiation-hardened per Microsemi MicroNote 050, with demonstrated tolerance to total ionizing dose (TID) up to 100 krad(Si) and no single-event latchup (SEL) observed. Its hermetic glass package and Category 1 bond prevent parametric degradation in gamma or proton irradiation environments. The MX1N8156US/TR is routinely deployed in satellite telemetry receivers and reactor monitoring systems.
MX1N8156US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22.3V
- Current - Peak Pulse (10/1000µs):
- 6.73A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8156US/TR FAQ
1.How can I place an order for MX1N8156US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8156US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8156US/TR reliable?
The price and inventory of MX1N8156US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8156US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8156US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8156US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8156US/TR?
MX1N8156US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8156US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8156US/TR?
For technical support, including MX1N8156US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8156US/TR requirements.
6.How does Aetrix verify that MX1N8156US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8156US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8156US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8156US/TR?
All MX1N8156US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8156US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8156US/TR part is unused and in its original packaging.
Return procedure for MX1N8156US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8156US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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