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Microchip Technology MX1N8157US/TR
- Part No.:
- MX1N8157US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8157US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,741
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Product details
Overview
MX1N8157US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 15.0 V working standoff voltage (VWM), 25.1 V clamping voltage (VC) at 11.7 A peak impulse current (IPP), 4 pF capacitance, and 150 W peak pulse power rating for high-frequency signal line protection in aerospace and defense systems.
For engineers reviewing the MX1N8157US/TR datasheet, MX1N8157US/TR pinout, MX1N8157US/TR application, or MX1N8157US/TR equivalent, this part delivers ultra-low capacitance ESD/EFT protection per IEC61000-4-2/4-4, secondary lightning robustness per IEC61000-4-5, and Category 1 metallurgical bonding for mission-critical reliability.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve 4 pF total capacitance while maintaining unidirectional operation. It operates across –55 °C to +175 °C junction temperature and supports 10/1000 µs surge waveforms with 0.01% duty factor.
The device features triple-layer passivation, voidless hard-glass hermetic sealing, and tungsten slug construction for radiation hardness per MicroNote 050. Its cathode-band polarity and axial-leaded "A" package enable through-hole mounting with RoHS-compliant matte tin plating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15.0 V - Maximum continuous reverse standoff voltage before breakdown; sets operating margin for protected signal lines. |
| V(BR) min | 17.1 V - Minimum breakdown voltage at 1 mA; ensures reliable conduction onset during transients. |
| VC @ IPP | 25.1 V at 11.7 A - Clamping voltage under 10/1000 µs surge; defines worst-case overvoltage seen by downstream circuitry. |
| CT | 4 pF - Total small-signal capacitance; enables use on >1 GHz RF/data lines without signal integrity degradation. |
| PPP | 150 W - Peak pulse power rating at 25 °C; supports repeated 10/1000 µs surges up to 11.7 A. |
| TJ Range | –55 °C to +175 °C - Junction temperature range; qualified for extended-temperature military and space applications. |
| RθJA | 150 °C/W - Thermal resistance junction-to-ambient; informs PCB thermal design for sustained power dissipation. |
Pinout & Package
Package: Axial-leaded "A" glass case with cathode band marking, voidless hermetic seal, tungsten slugs, and RoHS-compliant matte tin plating over copper leads. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300". Weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts surge energy to ground when clamped. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground; defines unidirectional blocking direction and clamping threshold. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated series rectifier diode - preserves signal integrity on high-speed data/RF lines. |
| Category 1 metallurgical bond | Internal high-reliability bond structure - meets MIL-STD-883 requirements for aerospace and defense deployment. |
| Hermetic glass sealing | Voidless hard-glass enclosure - eliminates moisture ingress and long-term parameter drift in harsh environments. |
| Radiation hardness | Inherent tolerance to ionizing radiation per Microsemi MicroNote 050 - suitable for space-grade electronics. |
| IEC61000-4-2/4-4 compliance | ESD ±15 kV air / ±8 kV contact and EFT 40 A burst immunity - certified for industrial and telecom front-end protection. |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines from induced lightning transients and ESD events in flight control systems. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between signal line and chassis ground to limit overvoltage without loading high-impedance bus receivers. Use Value: 4 pF capacitance prevents signal rise-time degradation; 15.0 V VWM aligns with bus common-mode voltage margins; 25.1 V VC ensures downstream receiver ICs remain within absolute maximum ratings. | Use Scenario: Shielding L-band or S-band low-noise amplifier (LNA) inputs from electrostatic discharge and radar-induced surges in satellite transceivers. IC Role / Device Role / Timing Role: First-stage transient suppressor mounted directly at RF connector interface to shunt fast transients before they reach sensitive GaAs MMIC stages. Use Value: 150 W PPP rating handles multi-kA lightning-induced currents; hermetic seal prevents performance shift in vacuum; radiation hardness avoids latch-up in orbit. |
| Military Radio Transceiver I/O | Ground-Based Radar Signal Conditioning |
Use Scenario: Securing HF/VHF antenna interface circuits in manpack and vehicular radios exposed to field-deployed ESD and EMP-like threats. IC Role / Device Role / Timing Role: Standoff-rated TVS placed in series with antenna coupling network to block DC while clamping RF-line transients. Use Value: 175 °C max junction temperature supports operation inside sealed, non-ventilated enclosures; Category 1 bond ensures survivability after repeated surge events. | Use Scenario: Protecting analog-to-digital converter (ADC) inputs and timing reference paths in phased-array radar receivers from switching noise and lightning coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS on clock distribution lines and ADC analog inputs to prevent metastability and sampling errors during surge events. Use Value: 4 pF capacitance avoids clock jitter increase; 15.0 V VWM matches typical ADC input rail voltages; 150 W PPP sustains multiple radar pulse train surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ15A | Surface-mount DO-214AB package; 21.2 V VC at 12.3 A; 170 pF capacitance - 42× higher than MX1N8157US/TR. | Not suitable for >100 MHz signal paths due to excessive capacitance; better for power-rail or lower-frequency digital I/O. | Select only when board space constraints prohibit axial-leaded devices and RF performance is not required. |
| 1N6105A | Same axial "A" package; 15.0 V VWM; 24.4 V VC at 12.3 A; 10 pF capacitance - 2.5× higher than MX1N8157US/TR. | Lacks Category 1 bond and hermetic seal; rated only to +150 °C junction; no radiation hardness documentation. | Acceptable for commercial-grade industrial equipment where cost is prioritized over extended temperature or radiation tolerance. |
Compared with SMCJ15A and 1N6105A, MX1N8157US/TR uniquely combines 4 pF capacitance, Category 1 metallurgical bonding, hermetic sealing, and radiation hardness - making it the sole option for high-reliability RF and aerospace signal-line protection where parameter stability and survivability are non-negotiable.
Availability
MX1N8157US/TR is available at Aetrix Electronics and suitable for avionics data buses, satellite RF front-ends, military radio transceivers, ground-based radar signal conditioning, and high-reliability industrial control systems requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for MX1N8157US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, communications, and industrial markets, with emphasis on radiation-hardened, high-temperature, and ultra-low-noise performance.
The MX1N8157US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for high-frequency transient protection in mission-critical systems where failure is not an option.
FAQ
What is the clamping voltage of MX1N8157US/TR and how is it measured?
The clamping voltage (VC) of MX1N8157US/TR is 25.1 V, measured at 11.7 A peak impulse current (IPP) under the standardized 10/1000 µs double-exponential surge waveform. This value represents the maximum voltage that appears across the device terminals during a transient event and directly determines the protection level afforded to downstream circuitry. MX1N8157US/TR maintains this clamping performance across its full operating temperature range.
Does MX1N8157US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8157US/TR provides ESD and EFT protection per IEC61000-4-2 (±15 kV air, ±8 kV contact) and IEC61000-4-4 (40 A burst), respectively, as documented in the official Microsemi T4-LDS-xxxx datasheet. Its low capacitance and fast response time ensure compliance without external filtering components. MX1N8157US/TR is validated for these standards in its native axial-leaded configuration.
What does the "MX" prefix in MX1N8157US/TR signify?
The "MX" prefix in MX1N8157US/TR indicates JANTX-level reliability qualification per MIL-PRF-19500, including enhanced screening, lot traceability, and extended temperature operation up to +175 °C. This distinguishes it from commercial-grade variants (blank prefix) and higher-tier JANTXV/ JANS versions. MX1N8157US/TR is intended for high-reliability applications where assured performance under stress is mandatory.
Can MX1N8157US/TR be used in bidirectional protection configurations?
MX1N8157US/TR is inherently unidirectional, but bidirectional protection can be implemented using two MX1N8157US/TR devices connected in anti-parallel, as shown in Figure 5 of the Microsemi datasheet. This configuration doubles the effective capacitance to 8 pF while preserving clamping symmetry. No single-device bidirectional variant exists in the 1N8149–1N8182 series.
Is MX1N8157US/TR RoHS compliant?
Yes, MX1N8157US/TR is RoHS compliant, as indicated by the "e3" suffix in its full nomenclature and confirmed in the Microsemi T4-LDS-xxxx datasheet. The device uses matte tin plating over copper leads and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Compliance applies to both material content and manufacturing process.
MX1N8157US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.1V
- Current - Peak Pulse (10/1000µs):
- 5.98A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8157US/TR FAQ
1.How can I place an order for MX1N8157US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8157US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8157US/TR reliable?
The price and inventory of MX1N8157US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8157US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8157US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8157US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8157US/TR?
MX1N8157US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8157US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8157US/TR?
For technical support, including MX1N8157US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8157US/TR requirements.
6.How does Aetrix verify that MX1N8157US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8157US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8157US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8157US/TR?
All MX1N8157US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8157US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8157US/TR part is unused and in its original packaging.
Return procedure for MX1N8157US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8157US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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