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Microchip Technology MX1N8158US/TR
- Part No.:
- MX1N8158US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8158US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,009
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Product details
Overview
MX1N8158US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 17.0 V working standoff voltage (VWM), with clamping voltage of 27.7 V at 300 A surge current - ideal for ESD/EFT protection in aerospace and telecom front-end interfaces.
For engineers reviewing the MX1N8158US/TR datasheet, MX1N8158US/TR pinout, MX1N8158US/TR application, or MX1N8158US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical systems.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction with tungsten slugs enables stable performance across −55 °C to +175 °C junction temperature range and supports radiation-hardened applications per MicroNote 050.
The device operates with 0.5 µA maximum standby current at 17.0 V VWM and exhibits a +0.090 %/°C breakdown voltage temperature coefficient. Its 150 W peak pulse power rating is defined at 25 °C with 0.01% duty factor and derates linearly above 25 °C per Figure 3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 17.0 V - Maximum continuous reverse standoff voltage before conduction begins; sets upper limit for protected line DC bias. |
| V(BR) min | 19.0 V - Minimum breakdown voltage at 1 mA; ensures reliable triggering above normal operating voltage. |
| VC @ IPP | 27.7 V at 300 A - Clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream circuitry. |
| CT | 4 pF - Total capacitance at 0 V; enables use on >1 GHz RF lines without signal integrity degradation. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports repeated lightning-induced transients in telecom infrastructure. |
| TJ Range | −55 °C to +175 °C - Junction temperature range; validates suitability for under-hood automotive and space-grade thermal environments. |
| RθJA | 150 °C/W - Thermal resistance junction-to-ambient; requires minimal PCB copper area for thermal management in sealed enclosures. |
Pinout & Package
MX1N8158US/TR is housed in an axial-leaded, voidless-hermetically-sealed hard-glass package with cathode band polarity marking. Dimensions: BD = 0.060–0.085 in (1.52–2.16 mm), BL = 0.106–0.175 in (2.69–4.45 mm), LL = 0.800–1.300 in (20.32–33.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-bias clamping | Connected to protected signal line; conducts surge current toward ground when VWM exceeded. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground or low-impedance return; defines unidirectional conduction direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration, enabling >20-year field life in sealed military avionics modules. |
| Category 1 metallurgical bond | Internal tungsten-copper bond structure qualified per MIL-STD-883 for high-reliability space and defense platforms. |
| Triple-layer passivation | Enhanced surface insulation prevents leakage path formation under high humidity and ionized contamination. |
| Low 4 pF capacitance | Preserves signal rise time and impedance matching on 5G RF front-end, HDMI 2.1, and high-speed serial links. |
Applications
| Telecom Line Interface Protection | Aerospace Data Bus Protection |
|---|---|
Use Scenario: Protecting RS-485/RS-422 differential pairs in base station remote radio units exposed to induced lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed between each data line and chassis ground to clamp common-mode transients without distorting differential signaling. Use Value: 4 pF capacitance avoids skew between complementary signals; 27.7 V clamping ensures receiver ICs remain within absolute maximum ratings during 1 kV/µs surges. | Use Scenario: Shielding ARINC 429 data lines in flight control computers against ESD events during maintenance and environmental transients. IC Role / Device Role / Timing Role: Standoff-rated TVS installed at connector entry point to absorb ±15 kV contact ESD per IEC61000-4-2 without latch-up. Use Value: Hermetic glass package withstands 1000+ thermal cycles; Category 1 bond ensures no bond lift under vibration up to 20 g RMS. |
| Medical Imaging Signal Chain Protection | Industrial Ethernet PHY Protection |
Use Scenario: Safeguarding analog front-end inputs of ultrasound beamformer ASICs from cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at SMA connector interface to suppress fast-rising ESD pulses before reaching sensitive amplifiers. Use Value: 0.5 µA ID at 17 V VWM prevents baseline drift in precision 16-bit ADC stages; RoHS-compliant matte tin plating ensures biocompatibility. | Use Scenario: Protecting 100BASE-TX transformer center taps and PHY pins in factory automation gateways subjected to EFT bursts. IC Role / Device Role / Timing Role: TVS mounted on PCB near RJ45 jack to shunt 4 kV/5 kHz EFT noise per IEC61000-4-4 without degrading 100 Mbps eye diagram. Use Value: 150 W PPP rating sustains repeated 10/1000 µs surges; axial leads allow through-hole mechanical retention in high-vibration machinery cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ17A | Surface-mount SMB package; 6.5 pF capacitance; 21.2 V VWM; 27.6 V VC @ 24.9 A. | Limited to lower-energy surges (600 W vs. 150 W); unsuitable for >500 MHz RF paths due to higher capacitance. | Select when board space is constrained and surge energy is ≤600 W; not recommended for hermetic or radiation-hardened systems. |
| 1N6377 | Axial-leaded but non-hermetic epoxy package; 10 pF capacitance; 17 V VWM; 27.7 V VC @ 225 A. | Lacks Category 1 bond and triple-layer passivation; fails MIL-STD-750 Method 1020 ESD screening. | Acceptable for commercial industrial controls where reliability requirements are less stringent than aerospace/defense. |
Compared with SMBJ17A and 1N6377, MX1N8158US/TR uniquely combines hermetic sealing, 4 pF capacitance, and Category 1 metallurgical bonding - making it the only option qualified for high-frequency, high-reliability transient suppression in certified avionics and spaceflight electronics.
Availability
MX1N8158US/TR is available at Aetrix Electronics and suitable for telecom line interface protection, aerospace data bus protection, medical imaging signal chain protection, and industrial Ethernet PHY protection requiring stable component supply across extended product lifecycles.
Supply support for MX1N8158US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The MX1N8158US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option - including satellite communications, flight control systems, and nuclear instrumentation.
FAQ
What is the clamping voltage of MX1N8158US/TR at its rated surge current?
The MX1N8158US/TR has a maximum clamping voltage (VC) of 27.7 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The MX1N8158US/TR maintains this clamping performance across its full operating temperature range due to its stable breakdown characteristics and hermetic construction.
Is MX1N8158US/TR compliant with RoHS and other environmental standards?
Yes, MX1N8158US/TR is RoHS compliant (e3 marking), with matte tin plating over copper leads. It also meets MIL-STD-750 Method 1020 for ESD insensitivity and supports secondary lightning protection per select levels of IEC61000-4-5. The voidless hermetic glass package eliminates halogenated flame retardants and outgassing concerns critical for vacuum and sealed-system applications.
How does the 4 pF capacitance of MX1N8158US/TR impact high-frequency circuit design?
The 4 pF total capacitance of MX1N8158US/TR minimizes signal distortion on high-speed lines, enabling use on RF front-ends up to 2 GHz without measurable insertion loss or group delay variation. Unlike higher-capacitance TVS devices, MX1N8158US/TR avoids resonance with PCB trace inductance and preserves impedance matching on 50 Ω or 75 Ω transmission lines - a key advantage in radar receivers and broadband test equipment where MX1N8158US/TR is routinely deployed.
What is the significance of "Category 1 metallurgical bond" in MX1N8158US/TR?
The Category 1 metallurgical bond in MX1N8158US/TR refers to an internal tungsten-copper interconnect qualified per MIL-STD-883 for extreme thermal cycling, mechanical shock, and long-term reliability. This bond ensures no delamination or resistance shift after 1000+ thermal cycles from −55 °C to +125 °C - a requirement for flight-critical avionics where MX1N8158US/TR is used in ARINC 429 and MIL-STD-1553B data buses.
Can MX1N8158US/TR be used in bidirectional protection configurations?
MX1N8158US/TR is unidirectional by design, but bidirectional protection can be achieved by placing two MX1N8158US/TR devices in anti-parallel configuration as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF while preserving low-clamping performance. For native bidirectional operation without added capacitance, alternate families such as the 1N82xx series would be required - MX1N8158US/TR itself remains strictly unidirectional.
MX1N8158US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 17V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 5.42A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8158US/TR FAQ
1.How can I place an order for MX1N8158US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8158US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8158US/TR reliable?
The price and inventory of MX1N8158US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8158US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8158US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8158US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8158US/TR?
MX1N8158US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8158US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8158US/TR?
For technical support, including MX1N8158US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8158US/TR requirements.
6.How does Aetrix verify that MX1N8158US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8158US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8158US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8158US/TR?
All MX1N8158US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8158US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8158US/TR part is unused and in its original packaging.
Return procedure for MX1N8158US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8158US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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