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Microchip Technology MX1N8159US/TR
- Part No.:
- MX1N8159US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8159US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,436
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Product details
Overview
MX1N8159US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 18.0 V working standoff voltage (VWM) with 30.5 V clamping voltage (VC) at 11.7 A peak surge current - ideal for ESD/EFT protection in aerospace data links.
For engineers reviewing the MX1N8159US/TR datasheet, MX1N8159US/TR pinout, MX1N8159US/TR application, or MX1N8159US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass package robustness, and IEC61000-4-2/4-4 compliance for mission-critical interfaces.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction incorporates internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and thermal stability up to +175 °C junction temperature.
The device operates with 0.5 µA maximum standby current at 18.0 V VWM and clamps transients to ≤30.5 V at 11.7 A IPP under 10/1000 µs waveform. Its 150 °C/W thermal resistance and 1.0 W steady-state power rating require careful PCB thermal design for sustained surge duty cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 18.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets operating margin for protected signal lines. |
| VC @ IPP | 30.5 V at 11.7 A - Clamping voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| CT | 4 pF - Total junction capacitance at 0 V; enables >1 GHz signal integrity in RF/data lines without distortion. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports lightning-level surges per IEC61000-4-5 Level 3. |
| TJ Range | –55 to +175 °C - Extended junction temperature range confirms suitability for avionics and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires ≥1 cm² copper pour for >1 W average dissipation. |
| Package | Axial-leaded glass DO-41 - Hermetic voidless seal with tin/lead or RoHS-compliant matte tin plating; compatible with wave soldering at 260 °C. |
Pinout & Package
MX1N8159US/TR uses a two-terminal axial-leaded DO-41 glass package with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin plated over copper; mounting orientation is unrestricted.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during overvoltage events above V(BR) ≈ 20.9 V. |
| Cathode | Reference terminal / ground return path | Connected to system ground or low-impedance reference; carries full surge current during clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal voids, ensuring long-term parameter stability in humid or vacuum environments. |
| Category 1 metallurgical bond | Internal tungsten-slug bonding meets MIL-STD-883 Class B requirements for high-reliability aerospace and defense systems. |
| 4 pF capacitance | Enables use on >500 Mbps serial links (e.g., RS-422, ARINC 429) without signal rise-time degradation. |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT bursts - reduces need for external filtering. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050; suitable for LEO satellite bus and avionics subsystems. |
Applications
| Avionics Data Bus Protection | Satellite Telemetry Interface |
|---|---|
Use Scenario: Protecting ARINC 429 receive inputs against induced lightning transients in flight control computers. IC Role / Device Role / Timing Role: Unidirectional TVS placed between differential receiver input and chassis ground to clamp common-mode surges. Use Value: 4 pF capacitance prevents signal edge rounding at 100 kHz data rate; 30.5 V clamping ensures receiver ICs remain within absolute maximum ratings. | Use Scenario: Shielding S-band telemetry downlink receivers from ESD events during ground handling and launch vibration. IC Role / Device Role / Timing Role: Standoff protection on RF front-end bias lines and IF signal paths prior to low-noise amplifiers. Use Value: Hermetic glass package withstands outgassing in vacuum; Category 1 bond ensures no parametric shift after 100 krad(Si) TID exposure. |
| Downhole Oilfield Sensor Interface | Military Vehicle CAN FD Node |
Use Scenario: Safeguarding 4–20 mA sensor loop drivers in high-temperature (>150 °C) oil well logging tools exposed to switching surges. IC Role / Device Role / Timing Role: Primary transient suppressor across loop supply terminals, rated for continuous operation at +175 °C junction temperature. Use Value: 175 °C max TJ and 150 °C/W RθJA allow direct mounting on stainless steel housings with minimal heatsinking. | Use Scenario: Secondary protection on CAN FD physical layer (ISO 11898-2) nodes in armored vehicle ECUs subjected to ISO 7637-2 pulse 5a/b. IC Role / Device Role / Timing Role: Low-capacitance unidirectional clamp on CAN_H/CAN_L lines referenced to chassis ground. Use Value: 4 pF capacitance avoids CAN FD bit-rate degradation at 5 Mbps; 150 W PPP handles 100 V/50 Ω load dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ18A | Surface-mount SMC package; 6.5 pF capacitance; 20.0 V VWM; 29.2 V VC @ 12.3 A. | Higher capacitance limits use in >200 Mbps links; lacks hermetic seal and Category 1 bond. | Select when board space is constrained and radiation tolerance is not required. |
| 1N6322 | Same DO-41 axial package; 5.0 pF capacitance; 18.2 V VWM; 31.0 V VC @ 11.5 A; non-hermetic epoxy. | No voidless seal or Category 1 bond; not qualified for aerospace or downhole use. | Select for commercial-grade cost-sensitive designs where MIL-spec reliability is unnecessary. |
Compared with SMCJ18A and 1N6322, MX1N8159US/TR provides superior high-frequency performance (4 pF), guaranteed hermetic reliability, and radiation hardness - making it the only option qualified for flight-critical avionics and space-rated telemetry interfaces.
Availability
MX1N8159US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite telemetry interface hardening, and downhole oilfield sensor interface applications requiring stable component supply across extended product lifecycles.
Supply support for MX1N8159US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N8149–1N8182 series was developed to meet MIL-PRF-19500/530 requirements for hermetic, low-capacitance TVS diodes in mission-critical communication and sensing systems.
FAQ
What is the breakdown voltage (V(BR)) specification for MX1N8159US/TR?
The MX1N8159US/TR has a minimum breakdown voltage (V(BR)) of 20.9 V at 1 mA test current, with a maximum of 22.8 V. This defines the voltage threshold at which the device transitions from high-impedance blocking to low-impedance clamping behavior during transient events. The MX1N8159US/TR maintains this specification across its full –55 °C to +175 °C operating junction temperature range.
Is MX1N8159US/TR RoHS compliant?
Yes, MX1N8159US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. The axial leads feature matte tin plating over copper, meeting EU Directive 2011/65/EU requirements. Microsemi documentation confirms RoHS versions are available and fully qualified for high-reliability applications without compromising electrical or mechanical performance.
Can MX1N8159US/TR be used for bidirectional transient protection?
MX1N8159US/TR is inherently unidirectional, but bidirectional protection can be achieved by connecting two units in anti-parallel configuration as shown in Figure 5 of the datasheet. This arrangement doubles total capacitance to 8 pF while preserving clamping performance. For native bidirectional operation, alternate devices like the 1N8159US-BI would be required - however, that variant is not offered in the MX-reliability grade.
What is the maximum surge current (IPP) rating for MX1N8159US/TR?
The MX1N8159US/TR is rated for 11.7 A peak impulse current (IPP) under the standard 10/1000 µs double-exponential waveform. This value corresponds directly to its 150 W peak pulse power rating and 30.5 V clamping voltage. The device sustains this rating at 25 °C ambient, with derating applied per the published curve for elevated temperatures.
Does MX1N8159US/TR require special PCB layout considerations?
Yes - due to its 150 °C/W thermal resistance, MX1N8159US/TR requires ≥1 cm² of 2-oz copper connected to each lead for effective heat dissipation during repetitive surges. Short, wide traces minimize inductance in the surge current path, and placement near protected connectors reduces loop area. Avoid thermal relief on pads to maintain thermal conductivity, especially in high-temperature environments where junction temperature must stay below +175 °C.
MX1N8159US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 30.5V
- Current - Peak Pulse (10/1000µs):
- 4.92A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8159US/TR FAQ
1.How can I place an order for MX1N8159US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8159US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8159US/TR reliable?
The price and inventory of MX1N8159US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8159US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8159US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8159US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8159US/TR?
MX1N8159US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8159US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8159US/TR?
For technical support, including MX1N8159US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8159US/TR requirements.
6.How does Aetrix verify that MX1N8159US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8159US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8159US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8159US/TR?
All MX1N8159US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8159US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8159US/TR part is unused and in its original packaging.
Return procedure for MX1N8159US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8159US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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