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Microchip Technology MX1N8160US/TR
- Part No.:
- MX1N8160US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8160US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,901
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Product details
Overview
MX1N8160US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 20 V working standoff voltage (VWM), 33.3 V maximum clamping voltage (VC) at 11.7 A IPP, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and data lines in aerospace and defense systems.
For engineers reviewing the MX1N8160US/TR datasheet, MX1N8160US/TR pinout, MX1N8160US/TR application, or MX1N8160US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass package robustness, and compliance with IEC61000-4-2/4-4/4-5 for secondary lightning and EFT protection.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated device. Its hard-glass hermetic construction uses internal tungsten slugs and Category 1 metallurgical bonds, enabling operation from –55 °C to +175 °C with no voids or moisture ingress risk.
The device operates as a unidirectional clamp: it blocks up to 20 V DC (VWM), breaks down at minimum 22.8 V (V(BR)) at 1 mA, and clamps transients to ≤33.3 V at 11.7 A (IPP). Standby leakage is ≤0.5 µA at VWM, and thermal resistance is 150 °C/W junction-to-ambient on standard PCB mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20 V - Maximum continuous reverse voltage before conduction; sets operating margin for protected signal lines. |
| V(BR) min | 22.8 V @ 1 mA - Minimum breakdown threshold ensures predictable clamping onset above normal operating voltage. |
| VC max | 33.3 V @ 11.7 A - Clamping voltage under 10/1000 µs surge; defines worst-case voltage seen by downstream ICs. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports high-energy transients without failure. |
| CT | 4 pF - Total capacitance at 0 V; enables use on >1 GHz RF paths and high-speed serial interfaces without signal distortion. |
| TJ range | –55 to +175 °C - Full military-grade temperature operation; validated for avionics and space-qualified systems. |
| RθJA | 150 °C/W - Thermal resistance defines safe steady-state power dissipation limit (1.0 W) on standard PCB layout. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass axial-leaded "A" package with tungsten slugs and cathode band marking. Dimensions: BD = 0.060–0.085 in (1.52–2.16 mm), BL = 0.106–0.175 in (2.69–4.45 mm), LL = 0.800–1.300 in (20.32–33.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink during forward conduction | Connected to protected line; conducts surge energy to ground when clamped. |
| Cathode | Reference terminal with polarity band | Marked end; connected to system ground or lower-potential rail; defines unidirectional blocking direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture-induced parameter drift and long-term degradation in humid or vacuum environments. |
| Category 1 metallurgical bond | Meets MIL-STD-780 reliability requirements for mission-critical systems with zero field failures expected. |
| Triple-layer passivation | Prevents surface leakage and corrosion under high humidity, salt fog, or radiation exposure. |
| Low 4 pF capacitance | Preserves signal integrity on 5G RF front-ends, GPS L1/L2 receivers, and 10 Gbps+ data links. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-ground lightning surges. |
Applications
| GPS Receiver Front-End Protection | Aerospace Data Bus Line Protection |
|---|---|
Use Scenario: Protecting L1/L2 antenna feedlines from ESD events during ground handling and lightning-induced transients in flight. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between antenna port and LNA input to shunt surges while preserving RF bandwidth. Use Value: 4 pF capacitance avoids detuning of 1.575 GHz / 1.227 GHz matching networks; 33.3 V clamping prevents LNA damage. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data lines against induced surges during aircraft power-up or lightning strikes. IC Role / Device Role / Timing Role: Series-mounted TVS on each differential line to clamp common-mode transients without distorting Manchester-encoded timing. Use Value: 150 W rating handles multi-kV fast-rising transients; hermetic seal ensures reliability across 20,000+ flight cycles. |
| Defense Radar Signal Processing | Satellite Command & Telemetry Interface |
Use Scenario: Shielding ADC inputs and clock distribution lines in airborne radar processors from EMP and switching noise. IC Role / Device Role / Timing Role: Low-capacitance TVS on analog sensor inputs and high-speed clock traces to maintain SNR and jitter performance. Use Value: Sub-10 ps response time and 4 pF loading prevent signal edge degradation critical for 12-bit+ sampling accuracy. | Use Scenario: Protecting S-band command receivers and telemetry outputs from launch vibration-induced arcing and solar flare transients. IC Role / Device Role / Timing Role: Unidirectional clamp on uplink/downlink RF paths and RS-422 telemetry lines to meet NASA EEE-INST-002 radiation hardness requirements. Use Value: Inherent radiation hardness per MicroNote 050 and –55 °C to +175 °C operation support deep-space mission longevity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ20A | Surface-mount DO-214AB package; 22.2 V VWM; 32.4 V VC @ 12.3 A; 100 pF capacitance. | Higher capacitance limits use to sub-100 MHz applications; unsuitable for RF front-ends or high-speed serial links. | Select only when board space constraints require SMT and RF performance is not required. |
| 1N6322 | Axial-leaded but non-hermetic epoxy package; 20 V VWM; 32.4 V VC @ 12.3 A; 15 pF capacitance; no Category 1 bond. | Lacks radiation hardness and long-term hermetic reliability; not qualified for aerospace or defense deployments. | Acceptable for commercial industrial control where cost is primary and environmental stress is low. |
Compared with SMCJ20A and 1N6322, MX1N8160US/TR uniquely combines 4 pF capacitance, hermetic sealing, Category 1 bonding, and radiation hardness - making it the sole choice for RF-critical, high-reliability, and space-qualified transient protection.
Availability
MX1N8160US/TR is available at Aetrix Electronics and suitable for GPS receiver front-ends, aerospace data bus protection, and defense radar signal processing requiring stable component supply across extended product lifecycles.
Supply support for MX1N8160US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The MX1N8160US/TR belongs to Microsemi's 1N8149–1N8182 family of hermetic TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option - including satellite payloads, avionics, and nuclear instrumentation.
FAQ
What is the clamping voltage of the MX1N8160US/TR under a 10/1000 µs surge?
The MX1N8160US/TR has a maximum clamping voltage (VC) of 33.3 V at 11.7 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and defines the upper voltage limit imposed on protected circuitry during transient events. The MX1N8160US/TR maintains this clamping performance due to its low-dynamic-resistance avalanche structure and hermetic thermal path.
Is the MX1N8160US/TR RoHS compliant?
Yes, the MX1N8160US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. Its axial-leaded terminals feature matte tin plating over copper, meeting EU Directive 2011/65/EU requirements. The hermetic glass package contains no lead-based solder or hazardous substances, and the device is certified to JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life).
Does the MX1N8160US/TR support bidirectional transient protection?
No, the MX1N8160US/TR is strictly unidirectional. Bidirectional protection requires two MX1N8160US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping for AC-coupled or floating signal lines. The MX1N8160US/TR itself only clamps in the reverse direction relative to its cathode band.
What is the maximum steady-state power dissipation for the MX1N8160US/TR?
The MX1N8160US/TR has a maximum steady-state (average) power rating of 1.0 W at TA = 25 °C, limited by its 150 °C/W junction-to-ambient thermal resistance. This assumes adequate PCB copper area for heat spreading. At elevated ambient temperatures, derating applies per Figure 3: power must be reduced linearly to zero at +175 °C junction temperature. The MX1N8160US/TR is not intended for continuous power regulation.
How does the MX1N8160US/TR achieve its 4 pF capacitance?
The MX1N8160US/TR achieves 4 pF total capacitance through a proprietary internal architecture that places a rectifier diode in series and opposite polarity to the main TVS junction. This configuration cancels parasitic junction capacitance while retaining full avalanche clamping capability. Unlike conventional TVS diodes, this design avoids trade-offs between capacitance and power rating - the MX1N8160US/TR delivers both 150 W PPP and 4 pF simultaneously.
MX1N8160US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 20V
- Voltage - Breakdown (Min):
- 22.8V
- Voltage - Clamping (Max) @ Ipp:
- 33.3V
- Current - Peak Pulse (10/1000µs):
- 4.5A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8160US/TR FAQ
1.How can I place an order for MX1N8160US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8160US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8160US/TR reliable?
The price and inventory of MX1N8160US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8160US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8160US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8160US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8160US/TR?
MX1N8160US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8160US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8160US/TR?
For technical support, including MX1N8160US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8160US/TR requirements.
6.How does Aetrix verify that MX1N8160US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8160US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8160US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8160US/TR?
All MX1N8160US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8160US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8160US/TR part is unused and in its original packaging.
Return procedure for MX1N8160US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8160US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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