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Microchip Technology MX1N8161US/TR
- Part No.:
- MX1N8161US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8161US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,134
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Product details
Overview
MX1N8161US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 22.0 V working standoff voltage (VWM), 25.7 V minimum breakdown voltage (V(BR)), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the MX1N8161US/TR datasheet, MX1N8161US/TR pinout, MX1N8161US/TR application, or MX1N8161US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (0.5 µA max at 22.0 V), and compliance with IEC61000-4-2/4-4 for mission-critical transient suppression.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic construction eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamp with cathode-band polarity, clamping at ≤37.4 V (VC) under 11.7 A peak impulse current (IPP), and exhibits a ±0.096 %/°C breakdown voltage temperature coefficient - critical for stable performance across thermal extremes in avionics and defense systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22.0 V maximum continuous reverse standoff voltage - defines safe operating threshold before conduction begins |
| V(BR) min | 25.7 V at 1 mA - ensures reliable avalanche triggering above system operating voltage |
| VC @ IPP | 37.4 V at 11.7 A (10/1000 µs) - limits transient-induced voltage overshoot on protected nodes |
| CT | 4 pF at 0 V - preserves signal integrity in >1 GHz RF paths and high-speed serial links |
| PPP | 150 W peak pulse power - withstands lightning-induced surges per IEC61000-4-5 Level 3 |
| ID max | 0.5 µA at VWM - minimizes loading on high-impedance sensor or reference circuits |
| TJ range | –55 °C to +175 °C - enables deployment in engine control units and space-grade electronics |
Pinout & Package
Package: Axial-leaded, hermetically sealed voidless hard-glass case with tungsten slugs; RoHS-compliant matte tin plating over copper leads; cathode band marking; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal during forward bias | Connected to protected line when used in reverse-biased clamping configuration |
| Cathode | Negative terminal; marked with band | Connected to ground or common reference; determines unidirectional clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond qualified for high-reliability applications including MIL-PRF-19500 and space-grade use |
| Triple-layer passivation | Enhances moisture resistance and long-term stability in humid or corrosive environments |
| Voidless hermetic seal | Eliminates internal delamination risk under thermal cycling and mechanical shock |
| Low-temperature coefficient | ±0.096 %/°C V(BR) drift - maintains consistent clamping across wide ambient ranges |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for low-earth orbit electronics |
Applications
| RF Front-End Protection | Aerospace Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA inputs and antenna switch outputs in S-band radar transceivers against ESD and induced transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at connector entry point to shunt surge energy before it reaches sensitive GaAs MMICs. Use Value: 4 pF capacitance avoids detuning of matching networks; 37.4 V clamping prevents LNA saturation or gate oxide damage. | Use Scenario: Safeguarding ARINC 429 receive inputs in flight control computers exposed to lightning-induced coupling. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS on differential data lines to clamp common-mode surges without disrupting 100 kbps Manchester-encoded signals. Use Value: 22.0 V VWM aligns with ARINC 429 logic thresholds; 150 W rating meets DO-160 Section 22 Level 3 surge requirements. |
| High-Speed Sensor Interface | Downhole Oilfield Instrumentation |
Use Scenario: Shielding piezoelectric sensor outputs in industrial vibration monitors from cable discharge events. IC Role / Device Role / Timing Role: Low-leakage (0.5 µA) TVS on high-impedance analog output path to prevent baseline shift or ADC offset errors. Use Value: Sub-µA standby current avoids loading 10 MΩ+ sensor sources; hermetic seal prevents parameter drift in dusty, high-humidity plants. | Use Scenario: Transient protection for pressure/temperature sensor lines in subterranean drilling tools operating at 175 °C ambient. IC Role / Device Role / Timing Role: High-temperature-rated TVS mounted near sensor connectors to absorb switching transients from motor-driven actuators. Use Value: +175 °C max junction temperature allows uninterrupted operation at downhole temperatures; Category 1 bond ensures reliability over 20,000-hour missions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ22A | Surface-mount SMC package; 300 W PPP; 5.5 pF capacitance; 24.4 V VWM | Higher power but larger capacitance - unsuitable for >500 MHz RF paths | Preferred for PCB space-constrained industrial controllers where RF performance is secondary |
| 1N6114A | Axial-leaded, 150 W, 22 V VWM, but 10 pF CT and no Category 1 qualification | Lacks radiation hardness and hermetic sealing - limited to commercial-grade ground systems | Acceptable for cost-sensitive terrestrial telecom where reliability certification is not required |
Compared with SMCJ22A and 1N6114A, MX1N8161US/TR uniquely combines ultra-low 4 pF capacitance, hermetic voidless packaging, Category 1 metallurgical bonding, and inherent radiation tolerance - making it the only qualified option for RF-intensive, high-reliability aerospace and defense deployments.
Availability
MX1N8161US/TR is available at Aetrix Electronics and suitable for RF front-end protection, aerospace data bus interface, and high-temperature downhole instrumentation requiring stable component supply and long-term obsolescence management.
Supply support for MX1N8161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8149–1N8182 family was engineered specifically for mission-critical transient suppression where failure is not an option - emphasizing hermeticity, low capacitance, and extreme environmental resilience over cost or general-purpose utility.
FAQ
What is the clamping voltage of MX1N8161US/TR under standard 10/1000 µs surge conditions?
The MX1N8161US/TR clamps at a maximum of 37.4 V when subjected to an 11.7 A peak impulse current (IPP) using the industry-standard 10/1000 µs waveform. This value is measured at 25 °C and guarantees predictable voltage limiting during transient events, protecting downstream circuitry such as RF amplifiers or precision ADCs without exceeding safe operating limits.
Does MX1N8161US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8161US/TR is explicitly rated for ESD immunity per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its low clamping voltage, fast response time, and robust 150 W surge capability ensure compliance in system-level testing - confirmed in Microsemi's T4-LDS-xxxx documentation and widely deployed in certified avionics equipment.
What does the "MX" prefix indicate in MX1N8161US/TR?
The "MX" prefix in MX1N8161US/TR denotes JANTX-level reliability qualification per MIL-PRF-19500, signifying enhanced screening, extended temperature range validation (–55 °C to +175 °C), and Category 1 internal metallurgical bonding. This distinguishes it from commercial-grade variants like 1N8161US and confirms suitability for military, space, and safety-critical industrial applications.
Can MX1N8161US/TR be used in bidirectional protection configurations?
MX1N8161US/TR is inherently unidirectional, but bidirectional protection can be achieved by connecting two MX1N8161US/TR devices in anti-parallel - as documented in Figure 5 of the T4-LDS-xxxx datasheet. This configuration doubles capacitance to 8 pF but retains full 150 W surge capability per polarity, enabling balanced transient suppression on AC-coupled or differential lines.
Is MX1N8161US/TR RoHS compliant?
Yes, MX1N8161US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature per Microsemi's part numbering system. The device uses matte tin plating over copper leads and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE - meeting EU Directive 2011/65/EU and supporting environmentally responsible manufacturing.
MX1N8161US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 4.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8161US/TR FAQ
1.How can I place an order for MX1N8161US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8161US/TR reliable?
The price and inventory of MX1N8161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8161US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8161US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8161US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8161US/TR?
MX1N8161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8161US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8161US/TR?
For technical support, including MX1N8161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8161US/TR requirements.
6.How does Aetrix verify that MX1N8161US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8161US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8161US/TR?
All MX1N8161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8161US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8161US/TR part is unused and in its original packaging.
Return procedure for MX1N8161US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8161US/TR Tags
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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