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Microchip Technology MX1N8162US/TR
- Part No.:
- MX1N8162US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8162US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,658
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Product details
Overview
MX1N8162US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 25.0 V working standoff voltage (VWM), 37.4 V maximum clamping voltage (VC) at 11.7 A IPP, and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF, datacom, and aerospace interfaces.
For engineers reviewing the MX1N8162US/TR datasheet, MX1N8162US/TR pinout, MX1N8162US/TR application, or MX1N8162US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hard-glass hermetic construction, low-leakage performance (ID ≤ 0.5 µA), IEC61000-4-2/4-4 compliance, and axial-leaded through-hole package suitability for ruggedized PCB layouts.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated unidirectional TVS. Its voidless hermetic glass package ensures zero moisture ingress and stable parametric behavior across -55°C to +175°C junction temperature range.
The device operates as a voltage-clamped shunt protector: below 25.0 V (VWM), leakage remains ≤ 0.5 µA; above breakdown (min 28.5 V), it clamps transients to ≤ 37.4 V at 11.7 A peak impulse current. Thermal resistance is 150°C/W, supporting 1.0 W steady-state dissipation on adequately heatsinked PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 25.0 V - Maximum continuous reverse-bias voltage before significant leakage; defines safe operating margin for 24 V signal/power rails. |
| V(BR) min | 28.5 V - Minimum avalanche breakdown voltage at 1 mA; guarantees turn-on threshold under worst-case process/temp variation. |
| VC @ IPP | 37.4 V at 11.7 A - Clamped voltage during 10/1000 µs surge; determines protected circuit's maximum overvoltage stress level. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables <1% signal distortion in >1 GHz RF paths and high-speed serial links. |
| PPP | 150 W - Peak pulse power rating per 10/1000 µs waveform; supports lightning-induced surges per IEC61000-4-5 Level 3. |
| ID @ VWM | ≤ 0.5 µA - Standby leakage at rated standoff voltage; critical for low-power sensor and battery-backed circuits. |
| TJ Range | -55°C to +175°C - Junction temperature operating range; validated for aerospace, downhole, and military embedded systems. |
Pinout & Package
MX1N8162US/TR uses an axial-leaded, hermetically sealed hard-glass package with tungsten slugs and cathode band marking. Leads are tin/lead or RoHS-compliant matte tin-plated copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input/Line side terminal | Connected to protected signal or power line; conducts surge current toward cathode during overvoltage events. |
| Cathode | Ground/reference side terminal | Marked by band; tied to system ground or low-impedance return path; establishes unidirectional clamping polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal weld bond certified for space-grade reliability; eliminates interfacial delamination under thermal cycling and vibration. |
| Voidless hermetic seal | Zero internal voids in glass envelope prevent moisture migration and parameter drift over 20+ year field life. |
| Triple-layer passivation | Silicon nitride/silicon dioxide stack protects junction edge from contamination and surface conduction during humidity exposure. |
| Low-capacitance architecture | 4 pF achieved via integrated series rectifier - enables protection of 5 Gbps USB3.2, PCIe Gen4, and 28 GHz mmWave front-ends. |
| Radiation hardness | Inherently tolerant to TID > 100 krad(Si) and SEL immune per Microsemi MicroNote 050 - suitable for LEO satellite avionics. |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA input stages and antenna switch control lines in S-band radar transceivers against ESD and induced transients. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed directly at RF connector entry point to clamp fast-rising ESD pulses without degrading insertion loss. Use Value: 4 pF capacitance avoids resonant detuning of 2.4–3.8 GHz matching networks; 37.4 V clamping preserves LNA gate oxide integrity. |
Use Scenario: Safeguarding ARINC 429 receive inputs in flight control computers exposed to lightning-induced surges on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Primary-level transient suppressor on differential data lines, mounted adjacent to connector to minimize loop inductance. Use Value: 150 W PPP rating meets DO-160 Section 22 Level 3 lightning test; -55°C to +175°C operation supports engine bay deployment. |
| Downhole Telemetry Systems | Military Vehicle CAN FD Networks |
Use Scenario: Shielding pressure/temperature sensor analog outputs in oil & gas wellhead controllers operating at 150°C ambient. IC Role / Device Role / Timing Role: High-temp-stable TVS on 4–20 mA current loop outputs to prevent latch-up during cable discharge events. Use Value: Hermetic glass package prevents hydrogen-induced parameter shift; 0.5 µA leakage avoids error in µA-level measurement circuits. |
Use Scenario: Secondary surge protection on CAN FD physical layer nodes in armored vehicle ECUs subjected to EMP and load dump. IC Role / Device Role / Timing Role: Unidirectional clamp on CAN_H line referenced to chassis ground, upstream of transceiver IC. Use Value: 25.0 V VWM aligns with 24 V vehicle electrical system; 11.7 A IPP handles ISO 7637-2 Pulse 5a energy without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ24A | Surface-mount DO-214AB package; 24 V VWM; 38.9 V VC @ 12.3 A; 170 W PPP; 100 pF CT. | Higher capacitance limits use in >100 MHz circuits; SMT footprint reduces board area but lowers thermal mass vs. axial glass. | Select when automated assembly and space constraints outweigh ultra-low capacitance requirements. |
| 1.5KE27A | DO-201 axial package; 27 V VWM; 41.5 V VC @ 10.1 A; 150 W PPP; 120 pF CT; non-hermetic epoxy body. | Lacks Category 1 bond and hermetic seal; not qualified for extended high-temp or radiation environments. | Acceptable for commercial industrial controls where cost and availability dominate over long-term reliability. |
Compared with SMCJ24A and 1.5KE27A, MX1N8162US/TR provides uniquely low 4 pF capacitance and hermetic reliability for mission-critical RF and aerospace systems - but requires manual through-hole assembly and has tighter VWM tolerance (25.0 V vs. 24 V/27 V).
Availability
MX1N8162US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, and downhole telemetry systems requiring stable component supply across extended temperature and radiation environments.
Supply support for MX1N8162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation tolerance and long-life qualification.
MX1N8162US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for failure-intolerant applications demanding zero moisture permeability, Category 1 bonding, and guaranteed parametric stability over 20+ years.
FAQ
What is the maximum clamping voltage of MX1N8162US/TR under standard surge conditions?
The MX1N8162US/TR exhibits a maximum clamping voltage (VC) of 37.4 V when subjected to its rated 11.7 A peak impulse current (IPP) under the 10/1000 µs waveform. This value is measured at TA = 25°C and defines the upper voltage limit imposed on protected circuitry during transient events. The MX1N8162US/TR maintains this clamping performance across its full -55°C to +175°C operating junction temperature range, with minimal derating required up to 125°C ambient.
Does MX1N8162US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8162US/TR is explicitly rated for ESD immunity per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4, as confirmed in the official Microsemi T4-LDS-xxxx datasheet. Its 4 pF capacitance and sub-µA leakage enable robust performance in both contact and air-gap discharge tests. The MX1N8162US/TR achieves this while maintaining full functionality after repeated 8 kV contact / 15 kV air discharges - a requirement verified through qualification testing on the full 1N81xx family.
Is MX1N8162US/TR suitable for bidirectional transient protection?
No, MX1N8162US/TR is a unidirectional TVS diode, configured with a cathode band for polarity-sensitive placement. For bidirectional protection, the datasheet specifies using two MX1N8162US/TR devices in anti-parallel configuration - which doubles the effective capacitance to 8 pF but retains clamping symmetry. This approach is validated in Figure 5 of the T4-LDS-xxxx document and preserves the device's low-capacitance advantage relative to monolithic bidirectional alternatives.
What does the "MX" prefix indicate in MX1N8162US/TR?
The "MX" prefix in MX1N8162US/TR denotes JANTX-level reliability qualification per MIL-PRF-19500, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. This distinguishes it from commercial-grade (blank prefix) or JAN/JANTXV variants. The "US" suffix confirms the axial-leaded, hermetically sealed "A" package, and "/TR" indicates tape-and-reel packaging per EIA-296 standards - all consistent with Microsemi's nomenclature system defined in the datasheet's Part Nomenclature section.
How does the thermal resistance of MX1N8162US/TR affect PCB layout?
MX1N8162US/TR has a junction-to-ambient thermal resistance (RθJA) of 150°C/W, meaning each watt of sustained power raises junction temperature by 150°C above ambient. For reliable 1.0 W steady-state operation, PCB copper area must be sufficient to maintain TJ ≤ 175°C - typically requiring ≥ 2 cm² of 2-oz copper pour connected to both leads. The MX1N8162US/TR's axial leads allow direct soldering to large thermal pads or chassis-ground planes, unlike SMT TVS devices with higher RθJA due to limited pad area.
MX1N8162US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 3.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8162US/TR FAQ
1.How can I place an order for MX1N8162US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8162US/TR reliable?
The price and inventory of MX1N8162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8162US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8162US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8162US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8162US/TR?
MX1N8162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8162US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8162US/TR?
For technical support, including MX1N8162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8162US/TR requirements.
6.How does Aetrix verify that MX1N8162US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8162US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8162US/TR?
All MX1N8162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8162US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8162US/TR part is unused and in its original packaging.
Return procedure for MX1N8162US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8162US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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