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Microchip Technology MX1N8163US/TR
- Part No.:
- MX1N8163US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8163US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,364
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Product details
Overview
MX1N8163US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 31.4 V minimum breakdown voltage (V(BR)), 28.0 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features Category 1 internal metallurgical bonds and is designed for high-reliability ESD/EFT protection in RF front-ends and aerospace data links.
For engineers reviewing the MX1N8163US/TR datasheet, MX1N8163US/TR pinout, MX1N8163US/TR application, or MX1N8163US/TR equivalent, key selection criteria include low-capacitance transient clamping, hermetic glass package robustness, IEC61000-4-2/4-4 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction enables operation from –55 °C to +175 °C with 150 W surge capability at 10/1000 µs waveform.
The device delivers 45.7 V maximum clamping voltage (VC) at 300 A peak impulse current (IPP), with 0.5 µA maximum standby current (ID) at 28.0 V VWM and ±0.098 %/°C temperature coefficient of breakdown voltage (αV(BR)).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 28.0 V - Maximum continuous reverse standoff voltage before conduction begins |
| V(BR) min | 31.4 V - Minimum breakdown voltage at 1 mA test current, defining turn-on threshold |
| VC @ IPP | 45.7 V - Clamping voltage at 300 A surge, limiting downstream voltage stress |
| PPP | 150 W - Peak pulse power handling at 10/1000 µs waveform, critical for lightning-level transients |
| CT | 4 pF - Total capacitance at 0 V, enabling use in >1 GHz RF signal paths without impedance disruption |
| TJ range | –55 to +175 °C - Junction temperature range supporting aerospace and downhole industrial deployment |
| ID @ VWM | 0.5 µA - Low leakage ensures minimal DC loading on protected circuits |
Pinout & Package
MX1N8163US/TR is housed in an axial-leaded hermetically sealed hard-glass package with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper, suitable for wave or hand soldering per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during clamping | Connected to protected line; conducts surge current to ground when VWM exceeded |
| Cathode | Reference terminal with polarity band | Marked end; connects to system ground or lower-potential rail for unidirectional clamping |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in harsh environments |
| Category 1 metallurgical bond | Meets MIL-PRF-19500 reliability requirements for space-grade applications |
| 4 pF capacitance | Preserves signal integrity in high-speed serial links and RF receiver inputs |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air ESD and 4 kV EFT burst immunity |
| Triple-layer passivation | Prevents surface leakage and enhances stability under high humidity or contamination |
Applications
| RF Front-End Protection | Aerospace Data Links |
|---|---|
Use Scenario: Protecting LNA input stages in S-band radar receivers from ESD and nearby lightning-induced transients. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed directly at antenna port to limit voltage excursion below LNA damage threshold. Use Value: 4 pF capacitance avoids detuning of 2.7–3.1 GHz matching networks while clamping surges to ≤45.7 V. | Use Scenario: Shielding MIL-STD-1553B bus receivers against induced transients in airborne avionics bays. IC Role / Device Role / Timing Role: Standoff-rated TVS on data line with 28.0 V VWM aligned to bus common-mode range. Use Value: Hermetic glass package ensures zero parameter shift after 1000+ thermal cycles between –55 °C and +70 °C. |
| Downhole Instrumentation | Medical Imaging Signal Chains |
Use Scenario: Safeguarding analog sensor interfaces in oil/gas logging tools exposed to high-temperature wellbores. IC Role / Device Role / Timing Role: Primary transient suppressor on 4–20 mA loop inputs subjected to cable discharge events. Use Value: 175 °C max junction rating allows uninterrupted operation at 150 °C ambient without derating. | Use Scenario: Clamping fast-rising ESD pulses on ultrasound transducer receive paths before low-noise amplifiers. IC Role / Device Role / Timing Role: Low-capacitance TVS placed at probe connector interface to preserve wideband signal fidelity. Use Value: 4 pF CT prevents attenuation of 10–20 MHz echo signals while clamping ±8 kV ESD to <46 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ28A | Surface-mount DO-214AB package; 22.0 pF capacitance; 28 V VWM; 300 W PPP | Higher capacitance limits use in >500 MHz circuits; better suited for board-level power rail protection | Select when PCB space is constrained and RF performance is not critical |
| 1N6105A | Axial-leaded glass package; 15 pF capacitance; 28 V VWM; 150 W PPP; non-hermetic | Lacks Category 1 bond and voidless seal; unsuitable for extended-life aerospace deployments | Select for cost-sensitive industrial control where full MIL-spec reliability is not required |
Compared with SMCJ28A and 1N6105A, MX1N8163US/TR uniquely combines hermetic reliability, 4 pF capacitance, and axial-leaded serviceability-making it irreplaceable in mission-critical RF and aerospace transient protection where parameter stability across temperature and lifetime is mandatory.
Availability
MX1N8163US/TR is available at Aetrix Electronics and suitable for RF front-end protection, aerospace data links, and downhole instrumentation requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for MX1N8163US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened components, and precision timing devices.
The MX1N8163US/TR belongs to Microsemi's legacy high-reliability TVS family, engineered specifically for defense, aerospace, and oilfield applications demanding hermetic sealing, extreme temperature tolerance, and certified ESD/EFT immunity.
FAQ
What is the clamping voltage of MX1N8163US/TR at its rated surge current?
The MX1N8163US/TR has a maximum clamping voltage (VC) of 45.7 V at 300 A peak impulse current (IPP), measured using the standard 10/1000 µs waveform. This value ensures protected circuitry remains below critical voltage thresholds during transient events. The MX1N8163US/TR maintains this clamping performance across its full operating temperature range from –55 °C to +175 °C.
Does MX1N8163US/TR meet IEC61000-4-2 ESD immunity standards?
Yes, MX1N8163US/TR is validated for IEC61000-4-2 Level 4 ESD immunity (±8 kV contact, ±15 kV air discharge). Its low-leakage design and hermetic construction ensure consistent performance across repeated ESD events without parameter degradation. The MX1N8163US/TR achieves this compliance without external filtering or layout dependencies.
What is the thermal resistance of MX1N8163US/TR, and how does it affect power dissipation?
MX1N8163US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W. At 25 °C ambient, its steady-state power rating is 1.0 W, meaning sustained power dissipation must remain below this level to avoid exceeding the 175 °C maximum junction temperature. The MX1N8163US/TR relies on PCB copper area and lead conduction-not heatsinking-for thermal management.
Is MX1N8163US/TR suitable for bidirectional transient protection?
No, MX1N8163US/TR is unidirectional only. For bidirectional protection, two MX1N8163US/TR devices must be connected in anti-parallel, as documented in Microsemi Application Note T4-LDS-xxxx. This configuration doubles total capacitance to 8 pF but preserves low-clamping performance across both polarities. The MX1N8163US/TR itself provides no reverse conduction path.
What does the "MX" prefix indicate in MX1N8163US/TR?
The "MX" prefix denotes JANTX-level military qualification per MIL-PRF-19500, indicating enhanced screening, lot traceability, and guaranteed performance across –55 °C to +175 °C. It distinguishes MX1N8163US/TR from commercial-grade variants (blank prefix) and higher-tier JANTXV/MS versions. The MX1N8163US/TR meets Category 1 internal bond requirements for high-reliability deployment.
MX1N8163US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 3.28A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8163US/TR FAQ
1.How can I place an order for MX1N8163US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8163US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8163US/TR reliable?
The price and inventory of MX1N8163US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8163US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8163US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8163US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8163US/TR?
MX1N8163US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8163US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8163US/TR?
For technical support, including MX1N8163US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8163US/TR requirements.
6.How does Aetrix verify that MX1N8163US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8163US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8163US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8163US/TR?
All MX1N8163US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8163US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8163US/TR part is unused and in its original packaging.
Return procedure for MX1N8163US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8163US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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