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Microchip Technology MX1N8164US/TR
- Part No.:
- MX1N8164US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8164US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,198
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Product details
Overview
MX1N8164US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 34.2 V working standoff voltage (VWM) with 3.01 A peak surge current (IPP) rating.
For engineers reviewing the MX1N8164US/TR datasheet, MX1N8164US/TR pinout, MX1N8164US/TR application, or MX1N8164US/TR equivalent, this device serves as a low-capacitance ESD/EFT protector in aerospace-grade serial interfaces, MIL-STD-1553 buses, and RF front-end circuits where failure tolerance and radiation hardness are critical.
Technical Context
The MX1N8164US/TR integrates a TVS diode in series with an opposing rectifier diode to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package uses Category 1 internal metallurgical bonds for radiation hardness per MicroNote 050 and immunity to MIL-STD-750 Method 1020 ESD.
It operates across –55 °C to +175 °C junction temperature, supports IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) compliance, and achieves clamping voltage of 49.9 V at 3.01 A IPP under 10/1000 µs waveform.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 34.2 V - Maximum continuous reverse standoff voltage before conduction begins; sets upper limit for protected line DC bias. |
| VC @ IPP | 49.9 V - Clamping voltage during 3.01 A surge; defines worst-case voltage seen by downstream circuitry. |
| PPP | 150 W - Peak pulse power handling at 25 °C, 10/1000 µs; determines survivability against fast transients. |
| CT | 4 pF - Total capacitance at 0 V; enables use on >1 GHz RF lines without signal integrity degradation. |
| TJ Range | –55 to +175 °C - Full military-grade operating range; supports engine bay, avionics, and space-qualified systems. |
| ID @ VWM | 0.5 µA - Standby leakage at rated standoff; ensures minimal power loss in always-on sensor or comms lines. |
| RθJA | 150 °C/W - Thermal resistance junction-to-ambient; requires adequate PCB copper pour for sustained pulse duty. |
Pinout & Package
MX1N8164US/TR uses an axial-leaded "A" package (hard-glass hermetic case with tungsten slugs), cathode-banded polarity, and RoHS-compliant matte tin plating over copper leads. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300". Weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected signal line; conducts surge energy toward ground when clamped. |
| Cathode | Reference terminal / clamping reference node | Connected to system ground or return path; establishes VWM and VC reference plane. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination-critical for 20+ year field life in sealed avionics enclosures. |
| Category 1 metallurgical bond | Enables operation in total ionizing dose (TID) environments up to 100 krad(Si); validated per MIL-PRF-19500. |
| Series rectifier + TVS topology | Reduces capacitance to 4 pF without sacrificing clamping performance-enables protection on 10 Gbps SerDes lanes. |
| Triple-layer passivation | Prevents surface leakage and parametric drift under high humidity and thermal cycling (–55/+175 °C, 1000 cycles). |
Applications
| MIL-STD-1553 Data Bus Protection | Aerospace RS-422 Transceiver Interface |
|---|---|
Use Scenario: Protecting bidirectional command/data lines in flight control computers against induced lightning transients and ESD events. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each data line (±) with anti-parallel pairing to provide symmetrical clamping. Use Value: 4 pF capacitance prevents signal edge distortion on 1 Mbps Manchester-encoded bus; 49.9 V clamping preserves receiver input common-mode range. | Use Scenario: Shielding full-duplex RS-422 differential pairs in satellite telemetry modules exposed to launch vibration and cosmic radiation. IC Role / Device Role / Timing Role: Discrete TVS mounted directly at connector entry point to shunt surges before reaching isolated transceiver IC. Use Value: Hermetic glass package withstands outgassing in vacuum; Category 1 bond ensures functionality after 50 krad TID exposure. |
| RF Front-End LNA Input Protection | High-Speed Serial Link (e.g., ARINC 818) |
Use Scenario: Safeguarding low-noise amplifier inputs in radar warning receivers operating at S-band frequencies. IC Role / Device Role / Timing Role: Single MX1N8164US/TR placed between antenna feed and LNA input, cathode grounded. Use Value: 4 pF capacitance introduces <0.1 dB insertion loss at 3 GHz; 34.2 V VWM accommodates DC bias on active antennas. | Use Scenario: Protecting 2.125 Gbps video pixel streams in airborne mission computers subject to ESD during maintenance. IC Role / Device Role / Timing Role: TVS deployed on each TMDS-style clock and data pair at board edge connectors. Use Value: Sub-5 pF capacitance avoids eye diagram closure; 150 W PPP handles contact discharge up to ±15 kV per IEC61000-4-2 Level 4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ33A | Surface-mount DO-214AB package; 33 V VWM; 64.3 V VC @ 4.7 A; 400 W PPP; 100 pF CT | Higher capacitance limits use to sub-100 MHz signals; no radiation hardness or hermeticity | Select for cost-sensitive industrial designs where size and solderability outweigh reliability requirements. |
| 1N6377 | Axial-leaded glass DO-41; 33 V VWM; 53.3 V VC @ 2.8 A; 150 W PPP; 100 pF CT; non-hermetic | Lacks Category 1 bond, voidless seal, and radiation tolerance; not qualified for aerospace use | Choose for commercial-grade telecom line cards needing basic surge protection without extended lifetime assurance. |
Compared with SMCJ33A and 1N6377, MX1N8164US/TR uniquely combines 4 pF capacitance, hermetic reliability, and radiation hardness-making it irreplaceable in flight-critical signal paths where parametric stability over decades is mandatory.
Availability
MX1N8164US/TR is available at Aetrix Electronics and suitable for MIL-STD-1553 data buses, aerospace RS-422 interfaces, and RF front-end LNA inputs requiring stable component supply across extended product lifecycles and obsolescence-sensitive programs.
Supply support for MX1N8164US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal solutions.
The 1N8149–1N8182 family was engineered specifically for defense and space applications demanding zero-failure transient protection-emphasizing hermetic sealing, ultra-low capacitance, and proven performance under extreme thermal, radiation, and mechanical stress.
FAQ
What is the clamping voltage of MX1N8164US/TR at its rated peak surge current?
The MX1N8164US/TR has a maximum clamping voltage (VC) of 49.9 V when subjected to its rated peak impulse current (IPP) of 3.01 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during a transient event. The MX1N8164US/TR maintains this clamping performance across its full operating temperature range due to its stable breakdown characteristics and hermetic construction.
Is MX1N8164US/TR suitable for bidirectional signal lines like RS-422 or MIL-STD-1553?
Yes, MX1N8164US/TR can protect bidirectional lines when used in anti-parallel configuration-two devices mounted with opposing polarity across the differential pair. This arrangement provides symmetrical clamping while retaining the 4 pF per-device capacitance advantage. The MX1N8164US/TR datasheet explicitly references Figure 5 for this implementation, confirming compatibility with MIL-STD-1553 and RS-422 interfaces where low capacitance and high reliability are essential.
Does MX1N8164US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8164US/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) protection per IEC61000-4-4. Its 4 pF capacitance, low leakage (<0.5 µA), and fast response enable robust immunity against ±8 kV contact and ±15 kV air discharge (IEC61000-4-2 Level 4), as well as repetitive bursts up to 4 kV (IEC61000-4-4 Level 4). The MX1N8164US/TR achieves this while maintaining parameter stability across temperature and radiation exposure.
What does the "MX" prefix in MX1N8164US/TR signify?
The "MX" prefix in MX1N8164US/TR indicates JANTX-level reliability qualification per MIL-PRF-19500, meaning the device meets enhanced screening, lot traceability, and extended environmental testing requirements beyond commercial-grade parts. It confirms that the MX1N8164US/TR undergoes rigorous burn-in, temperature cycling, and hermeticity validation-distinct from "MQ" (JAN) or "MS" (JANS) variants. This prefix directly ties the MX1N8164US/TR to aerospace and defense procurement specifications.
Can MX1N8164US/TR be used in place of standard DO-41 TVS diodes like 1N6377?
No-MX1N8164US/TR is not a drop-in replacement for standard DO-41 TVS diodes such as 1N6377. While both share axial-leaded form factor and similar VWM, the MX1N8164US/TR incorporates a unique series rectifier + TVS topology enabling 4 pF capacitance versus ~100 pF in 1N6377. Its hermetic glass package, Category 1 bond, and radiation hardness make the MX1N8164US/TR functionally and qualitatively distinct-intended for applications where those attributes are mandatory, not optional.
MX1N8164US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 3.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8164US/TR FAQ
1.How can I place an order for MX1N8164US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8164US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8164US/TR reliable?
The price and inventory of MX1N8164US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8164US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8164US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8164US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8164US/TR?
MX1N8164US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8164US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8164US/TR?
For technical support, including MX1N8164US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8164US/TR requirements.
6.How does Aetrix verify that MX1N8164US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8164US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8164US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8164US/TR?
All MX1N8164US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8164US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8164US/TR part is unused and in its original packaging.
Return procedure for MX1N8164US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8164US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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