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Microchip Technology MX1N8167US/TR
- Part No.:
- MX1N8167US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8167US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,937
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Product details
Overview
MX1N8167US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 40.0 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonds, triple-layer passivation, and RoHS-compliant matte tin plating for high-reliability protection in RF front-ends and aerospace data links.
For engineers reviewing the MX1N8167US/TR datasheet, MX1N8167US/TR pinout, MX1N8167US/TR application, or MX1N8167US/TR equivalent, this device delivers verified low-capacitance surge suppression for ESD-sensitive 5G infrastructure, MIL-STD-750 qualified systems, and IEC61000-4-2/4-4/4-5 compliant secondary lightning protection stages.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package enables operation from −55 °C to +175 °C with 150 °C/W thermal resistance junction-to-ambient.
The device exhibits 44.7 V minimum breakdown voltage (V(BR)) at 1 mA, clamps to ≤64.6 V at 300 A peak impulse current (IPP), and maintains <0.5 µA standby current at 40.0 V VWM - enabling low-leakage protection in always-on RF receivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets operating margin for 36 V nominal bus protection. |
| V(BR) min | 44.7 V at 1 mA - Confirmed breakdown threshold ensures reliable conduction onset above normal operating voltage. |
| VC @ IPP | 64.6 V at 300 A - Clamping voltage limits downstream IC stress during 10/1000 µs transients in telecom line cards. |
| CT | 4 pF - Enables use in >1 GHz RF paths without signal integrity degradation or impedance mismatch. |
| PPP | 150 W at 25 °C - Sustains repeated surges per IEC61000-4-5 Level 3 (2 kV line-to-ground) without parametric shift. |
| TJ range | −55 to +175 °C - Supports deployment in engine control units and satellite payload electronics without derating. |
| RθJA | 150 °C/W - Requires minimal PCB copper area for thermal management in compact avionics modules. |
Pinout & Package
MX1N8167US/TR uses an axial-leaded "A" MELF-style glass package (BD = 0.060–0.085", BL = 0.106–0.175", LL = 0.800–1.300") with cathode band marking and RoHS-compliant matte tin plating over copper leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-bias clamping | Connected to protected signal line; conducts surge current when VCA ≥ V(BR). |
| Cathode | Reference terminal tied to system ground or common return | Provides low-inductance return path; cathode band identifies polarity for correct PCB orientation. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and long-term parameter drift in humid or vacuum environments. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/510 reliability requirements for space-grade components. |
| Triple-layer passivation | Prevents surface leakage and corrosion under high-humidity MIL-STD-810H testing. |
| Low 4 pF capacitance | Preserves signal rise time in 10 Gbps SerDes interfaces without added equalization. |
| Nonsensitive to ESD | Withstands >30 kV HBM per MIL-STD-750 Method 1020 without parametric shift. |
Applications
| RF Front-End Protection | Aerospace Data Links |
|---|---|
Use Scenario: Protecting LNA inputs in S-band radar receivers from induced lightning transients. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at antenna feedpoint before matching network. Use Value: 4 pF capacitance avoids de-tuning of 2.7–2.9 GHz bandpass filters; 64.6 V clamping prevents LNA saturation during 2 kV IEC61000-4-5 surges. |
Use Scenario: Securing RS-422 differential pairs in UAV telemetry transceivers exposed to ESD during ground handling. IC Role / Device Role / Timing Role: Point-of-entry TVS on each conductor of full-duplex serial link. Use Value: <0.5 µA leakage at 40 V VWM ensures no DC offset in bias-dependent line drivers; −55 to +175 °C rating supports stratospheric flight profiles. |
| MIL-STD-1553 Bus Protection | 5G Small Cell Baseband |
Use Scenario: Guarding MIL-STD-1553B remote terminal transceivers against EFT bursts in naval combat systems. IC Role / Device Role / Timing Role: Standoff-rated TVS on both data lines (±) referenced to chassis ground. Use Value: 150 W PPP handles repetitive 5 kHz EFT bursts per IEC61000-4-4; Category 1 bond ensures zero failure in 10,000-cycle vibration tests. |
Use Scenario: Shielding ADC clock inputs in massive MIMO baseband FPGAs from board-level ESD events. IC Role / Device Role / Timing Role: Low-capacitance shunt clamp on 122.88 MHz reference clock trace. Use Value: 4 pF CT introduces <0.1° phase jitter at 122.88 MHz; 44.7 V V(BR) provides 15% margin over 36 V supply rail. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ40A | Higher 100 pF capacitance; 64.5 V VC at 32.4 A IPP; DO-214AA package. | Not suitable for >100 MHz RF paths; better for power rail protection where capacitance is non-critical. | Select SMBJ40A only when board space allows larger SMD footprint and RF performance is not required. |
| 1N8167US | Same electrical specs but non-RoHS (tin/lead plating); identical glass package and Category 1 bond. | Permitted only in legacy military programs requiring Pb-based solder compatibility. | Choose MX1N8167US/TR for new designs requiring RoHS compliance and matte tin finish. |
Compared with SMBJ40A and 1N8167US, MX1N8167US/TR uniquely combines 4 pF capacitance, RoHS compliance, and MIL-qualified Category 1 bonding - making it the sole option for radiation-hardened, high-frequency, and environmentally regulated deployments.
Availability
MX1N8167US/TR is available at Aetrix Electronics and suitable for RF front-end protection, aerospace data links, MIL-STD-1553 bus hardening, and 5G small cell baseband circuits requiring stable component supply across extended temperature and reliability lifecycles.
Supply support for MX1N8167US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8149–1N8182 series was designed specifically for mission-critical transient suppression in environments where failure is unacceptable - emphasizing hermetic sealing, ultra-low capacitance, and MIL-qualified metallurgical construction.
FAQ
What is the maximum clamping voltage of MX1N8167US/TR at its rated peak impulse current?
The MX1N8167US/TR clamps to a maximum of 64.6 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during standardized surge events per IEC61000-4-5. The MX1N8167US/TR maintains this clamping performance across its full operating temperature range due to its hard-glass hermetic construction and stable junction characteristics.
Does MX1N8167US/TR meet IEC61000-4-2 ESD immunity requirements?
Yes, MX1N8167US/TR provides ESD protection compliant with IEC61000-4-2 up to ±15 kV contact discharge. Its 4 pF capacitance and fast response time (<1 ns) enable effective charge diversion without distorting high-speed signals. The device's nonsensitivity to ESD per MIL-STD-750 Method 1020 further confirms robustness against handling-induced discharges - a critical attribute validated during qualification of the MX1N8167US/TR.
What is the thermal resistance junction-to-ambient for MX1N8167US/TR?
The thermal resistance junction-to-ambient (RθJA) of MX1N8167US/TR is 150 °C/W under standard PCB mounting conditions. This value assumes adequate copper pour and lead thermal conduction; it enables the MX1N8167US/TR to dissipate 150 W peak pulse power without exceeding its 175 °C maximum junction temperature during short-duration transients. Derating is required above 25 °C ambient per the published derating curve.
Can MX1N8167US/TR be used in bidirectional protection configurations?
MX1N8167US/TR is unidirectional by design, but bidirectional protection can be achieved by placing two MX1N8167US/TR devices in anti-parallel configuration. This arrangement doubles the effective capacitance to 8 pF while preserving clamping symmetry. The anti-parallel layout is explicitly validated in Microsemi's application schematic (Figure 5) and maintains full IEC61000-4-2/4-4/4-5 compliance for the MX1N8167US/TR family.
What does the "MX" prefix indicate in MX1N8167US/TR?
The "MX" prefix in MX1N8167US/TR denotes JANTX-level reliability qualification per MIL-PRF-19500, indicating enhanced screening including burn-in, temperature cycling, and hermeticity testing. This distinguishes the MX1N8167US/TR from commercial-grade variants (blank prefix) and confirms suitability for high-integrity applications such as avionics and satellite subsystems where field failure is unacceptable.
MX1N8167US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.6V
- Current - Peak Pulse (10/1000µs):
- 2.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8167US/TR FAQ
1.How can I place an order for MX1N8167US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8167US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8167US/TR reliable?
The price and inventory of MX1N8167US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8167US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8167US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8167US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8167US/TR?
MX1N8167US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8167US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8167US/TR?
For technical support, including MX1N8167US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8167US/TR requirements.
6.How does Aetrix verify that MX1N8167US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8167US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8167US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8167US/TR?
All MX1N8167US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8167US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8167US/TR part is unused and in its original packaging.
Return procedure for MX1N8167US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8167US/TR Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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